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NTE159 Silicon PNP Transistor Audio Amplifier, Switch (Compl to NTE123AP)
Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0A Total Device Dissipation (TA = 25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C Total Device Dissipation (TC = 25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Junction to Case, RJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W Thermal Resistance, Junction to Ambient, RJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W Note 1. Matched complementary pairs are available upon request (NTE159MCP). Matched complementary pairs have their gain specification (hFE) matched to within 10% of each other. Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current V(BR)CEO IC = 10mA, IB = 0 V(BR)CBO IC = 10A, IE = 0 V(BR)EBO IE = 10A, IC = 0 ICBO IEBO VCB = 50V, IE = 0 VCB = 50V, IE = 0, TA = +75C Emitter Cutoff Current 80 80 5 - - - - - - - - - - - - 50 5 100 V V V nA A nA Symbol Test Conditions Min Typ Max Unit
Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified)
Parameter ON Characteristics DC Current Gain hFE VCE = 10V, IC = 0.1mA VCE = 10V, IC = 1mA VCE = 10V, IC = 10mA VCE = 10V, IC = 100mA VCE = 10V, IC = 500mA Collector-Emitter Saturation Voltage VCE(sat) VBE(sat) VBE(on) fT Cob Cib hie hre hfe hoe NF IC = 150mA, IB = 15mA, Note 2 IC = 500mA, IB = 50mA, Note 2 Base-Emitter Saturation Voltage IC = 150mA, IB = 15mA, Note 2 IC = 500mA, IB = 50mA, Note 2 Base-Emitter ON Voltage Small-Signal Characteristics Current Gain-Bandwidth Product Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small-Signal Current Gain Output Admittance Noise Figure Switching Characteristics Turn-On Time Turn-Off Time ton toff VCC = 30V, VBE(off) = 3.8V, IC = 500mA, IB1 = 50mA VCC = 30V, IC = 500mA, IB1 = IB2 = 50mA - - - - 100 400 ns ns IC = 50mA, VCE = 10V, f = 100MHz VCB = 10V, IE = 0, f = 100kHz VCB = 10V, IE = 0, f = 100kHz IC = 10mA, VCE = 10V, f = 1kHz IC = 10mA, VCE = 10V, f = 1kHz IC = 10mA, VCE = 10V, f = 1kHz IC = 10mA, VCE = 10V, f = 1kHz IC = 100A, VCE = 10V, RS = 1k, f = 1kHz 100 - - - - - - - - - - 550 100 200 100 - 500 30 110 - - - - 3 mhos dB MHz pF pF k x 10-6 IC = 500mA, VCE = 500mV 25 40 50 40 30 - - - - - - - - - - - - - - - - - 250 - - 0.15 0.5 0.9 1.1 1.1 V V V V V Symbol Test Conditions Min Typ Max Unit
Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
.135 (3.45) Min
.210 (5.33) Max
Seating Plane
.500 (12.7) Min
.021 (.445) Dia Max
EBC .100 (2.54) .050 (1.27)
.165 (4.2) Max
.105 (2.67) Max .105 (2.67) Max .205 (5.2) Max

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Price & Availability of NTE159

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE159 06M7374	NTE Electronics Inc	Bipolar Transistor, Pnp, -80V To-92; Transistor Polarity:Pnp; Collector Emitter Voltage Max:80V; Continuous Collector Current:800Ma; Power Dissipation:625Mw; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes \|Nte Electronics NTE159	2500: USD0.826 1000: USD0.927 500: USD1.06 100: USD1.18 50: USD1.33 25: USD1.45 10: USD1.57 1: USD1.92	0
NTE159MCP 31C3084	NTE Electronics Inc	Transistor, Npn & Pnp, 80V; Transistor Polarity:Npn, Pnp; Collector Emitter Voltage Max Npn:80V; Collector Emitter Voltage Max Pnp:80V; Continuous Collector Current Npn:800Ma; Continuous Collector Current Pnp:800Ma; No. Of Pins:3Pinsrohs Compliant: Yes \|Nte Electronics NTE159MCP		0

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE159 2368-NTE159-ND	NTE Electronics Inc	TRANS PNP 80V 0.8A TO92	100: USD1.44 50: USD1.48 20: USD1.57 10: USD1.65 1: USD1.74	1126
NTE159M 2368-NTE159M-ND	NTE Electronics Inc	TRANS PNP 60V 0.6A TO18	100: USD1 50: USD1.02 20: USD1.08 10: USD1.14 1: USD1.2	16
NTE159-10 2368-NTE159-10-ND	NTE Electronics Inc	TRANS PNP 80V 800MA TO92 10PK	100: USD12.33 50: USD12.63 20: USD13.37 10: USD14.12 1: USD14.86	11
NTE159-5 2368-NTE159-5-ND	NTE Electronics Inc	TRANS PNP 80V 800MA TO92 5PK	100: USD6.18 50: USD6.32 20: USD6.7 10: USD7.07 1: USD7.44	3
NTE159MCP 2368-NTE159MCP-ND	NTE Electronics Inc	TRANS PNP 80V 0.8A TO92		0

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE159 70214899	NTE Electronics Inc.	Transistor, Bipolar, Si, PNP, Audio Amplifier, Switch, VCEO 80V, IC 800mA, PD 625mW \| NTE Electronics Inc. NTE159	1: USD1.43 50: USD1.35 100: USD1.29 250: USD1.22	2030

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE159	NTE Electronics Inc	Transistor PNP Silicon 80V IC-1A To92 Low Noise Audio AMP Switch Comp To NTE123AP	7500: USD0.88 5000: USD0.892 2500: USD0.919 1000: USD0.959 500: USD0.989 250: USD1.05 25: USD1.34 1: USD1.474	19
NTE159-10	NTE Electronics Inc	Package Of 10 NTE159	1000: USD7.68 500: USD7.89 250: USD8.11 100: USD8.58 50: USD8.97 25: USD9.11 5: USD10.97	7
NTE159-5	NTE Electronics Inc	Package Of 5 NTE159	2500: USD4.09 1000: USD4.16 500: USD4.28 250: USD4.52 100: USD4.66 50: USD4.8 5: USD6.04 1: USD6.64	1

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE159MCP 51646064	NTE Electronics Inc	Trans GP BJT PNP 80V 0.8A 625mW 3-Pin TO-92	30: USD2.6	40

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE159	NTE Electronics Inc			48
NTE1591	NTE Electronics Inc			3

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE159	NTE Electronics Inc	Bipolar Junction Transistor, PNP Type, TO-92	13: USD1.62 4: USD2.16 1: USD3.24	19
NTE1591	NTE Electronics Inc	ANALOG CIRCUIT	1: USD25.467	8
NTE1591	NTE Electronics Inc	ANALOG CIRCUIT	1: USD36.582	2
NTE159M	NTE Electronics Inc	RF SMALL SIGNAL BIPOLAR TRANSISTOR, 0.6A I(C), 1-ELEMENT, SILICON, PNP, TO-18	12: USD1.9072 3: USD2.1933 1: USD2.384	18

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE159 NTE159	NTE Electronics Inc	Transistor: PNP; bipolar; 80V; 0.8A; 0.625W; TO92	25: USD0.96 10: USD1.07 3: USD1.21 1: USD1.34	4
NTE159M NTE159M	NTE Electronics Inc	Transistor: PNP; bipolar; 60V; 0.6A; 1.8W; TO18	25: USD1.22 10: USD1.35 3: USD1.54 1: USD1.7	107

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE159	NTE Electronics Inc	IN STOCK SHIP TODAY	1000: USD1 100: USD1.15 1: USD1.54	102

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE159	NTE Electronics Inc	Transistor PNP Silicon 80V IC-1A To92 Low Noise Audio AMP Switch Comp To NTE123AP	7500: USD0.88 5000: USD0.892 2500: USD0.919 1000: USD0.959 500: USD0.989 250: USD1.05 25: USD1.34 1: USD1.474	19
NTE159-10	NTE Electronics Inc	Package Of 10 NTE159	1000: USD7.68 500: USD7.89 250: USD8.11 100: USD8.58 50: USD8.97 25: USD9.11 5: USD10.97	7
NTE159-5	NTE Electronics Inc	Package Of 5 NTE159	2500: USD4.09 1000: USD4.16 500: USD4.28 250: USD4.52 100: USD4.66 50: USD4.8 5: USD6.04 1: USD6.64	1

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