 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NEC's MEDIUM POWER NPN NE664M04 SILICON HIGH FREQUENCY TRANSISTOR FEATURES * * * * HIGH GAIN BANDWIDTH: fT = 20 GHz HIGH OUTPUT POWER: P-1dB = 26 dBm at 1.8 GHz HIGH LINEAR GAIN: GL = 12 dB at 1.8 GHz +0.40-0.05 2 +0.30 2.050.1 1.250.1 2.00.1 1.25 0.650.65 0.650.65 LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance 3 R57 DESCRIPTION NEC's NE664M04 is fabricated using NEC's state-of-the-art UHS0 25 GHz fT wafer process. With a transition frequency of 20 GHz, the NE664M04 is usable in applications from 100 MHz to over 3 GHz. The NE664M04 provides P1dB of 26 dBm, even with low voltage and low current, making this device an excellent choice for the output or driver stage for mobile or fixed wireless applications. The NE664M04 is housed in NEC's low profile/flat lead style "M04" package 1 +0.30-0.05 (leads 1, 3 and ,4) +0.01 0.590.05 4 PIN CONNECTIONS 1. Emitter 3. Emitter 2. Collector 4. Base ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER PACKAGE OUTLINE EIAJ3 REGISTRATION NUMBER SYMBOLS ICBO PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current1 Gain at VCE = 3 V, IC = 100 mA Output Power at 1 dB compression point at VCE = 3.6 V, ICQ = 4 mA, f = 1.8 GHz, Pin = 15 dBm, 1/2 Duty Cycle Linear Gain at VCE = 3.6 V, ICQ = 20 mA, f = 1.8 GHz, Pin = 0 dBm, 1/2 Duty Cycle Maximum Available Power Gain4 at VCE = 3 V, IC = 100 mA, f = 2 GHz Insertion Power Gain at VCE = 3 V, IC = 100 mA, f = 2 GHz Collector Efficiency, 3.6 V, ICQ = 4 mA, f = 1.8 GHz, Pin = 15 dBm, 1/2 Duty Cycle Gain Bandwidth at VCE = 3 V, IC = 100 mA, f = 0.5 GHz Feedback Capacitance2 at VCB = 3 V, IC = 0, f = 1 MHz dBm dB dBm dB % GHz pF 16 5.0 UNITS nA nA 40 60 26.0 12.0 12.0 6.5 60 20 1.0 1.5 MIN NE664M04 M04 2SC5754 TYP MAX 1000 1000 100 DC IEBO hFE P1dB GL MAG |S21E|2 c fT Cre Notes: 1. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the guard pin of capacitance meter. 3. Electronic Industrail Association of Japan 4. MAG = |S21| |S12| RF (K - K 2- 1 ). California Eastern Laboratories +0.11-0.05 +0.1 1.30 NE664M04 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation2 Junction Temperature Storage Temperature UNITS V V V mA mW C C RATINGS 13 5.0 1.5 500 735 150 -65 to +150 ORDERING INFORMATION PART NUMBER NE664M04-T2 QUANTITY 3k pcs./reel THERMAL RESISTANCE SYMBOLS Rth j-a1 Rth j-a2 PARAMETERS Junction to Ambient Resistance 1 UNITS RATINGS C/W 170 570 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on 38 x 38 mm, t = 0.4 mm polyimide PCB. Junction to Ambient Resistance2 C/W Note: 1. Mounted on 38 x 38 mm, t = 0.4 mm polyimide PCB. 2. Stand alone device in free air. APPLICATIONS Bluetooth Power Class 1 f = 2.4 GHz T80 R57 0 dBm 13 dBm 22 dBm NE663M04 NE664M04 SS Cordless Phone f = 2.4 GHz R57 20 dBm 26 dBm NE664M04 DCS1800 (GSM1800) Cellular Phone f = 1.8 GHz A 3 9Z 00 1 R55 R57 5 dBm 16 dBm 25 dBm 35 dBm NE678M04 NE664M04 NE5520379A (MOS FET) Cordless Phone f = 0.9 GHz TH R57 n3 dBm 9 dBm 25 dBm NE68019 (3-pin TUSMM) NE664M04 NE664M04 TYPICAL PERFORMANCE CURVES (TA = 25C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Reverse Tramsfer Capacitance, Cre (pF) 1000 2.0 f = 1 MHz Total Power Dissipation, Ptot (mW) Mounted on Polyimide PCB 800 (38 x 38 mm, t = 0.4 mm) 735 1.5 600 1.0 400 Stand alone device in free air 200 205 0.5 0 25 50 75 100 125 150 0 1 2 3 4 5 Ambient Temperature, TA (C) Collector to Base Voltage, VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 1000 100 10 1 0.1 0.01 0.001 0.5 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 450 IB : 0.5 mA step 400 7 mA 6 mA 5 mA 4 mA 3 mA 2 mA 1 mA IB = 0.5 mA 5 6 VCE = 3 V Collector Current, IC (mA) Collector Current, IC (mA) 350 300 250 200 150 100 50 0.6 0.7 0.8 0.9 1.0 0 1 2 3 4 Base to Emitter Voltage, VBE (V) Collector to Emitter Voltage, VCE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 VCE = 3 V DC Current Gain hFE 100 10 1 10 100 1000 Collector Current, IC (mA) NE664M04 TYPICAL PERFORMANCE CURVES (TA = 25C) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 25 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 35 VCE = 3 V IC = 100 mA Insertion Power Gain, IS21eI2 Maximum Available Gain, MAG (dB) Maximum Stable Gain, MSG (dB) Gain Bandwidth Product, fT (GHz) VCE = 3 V f = 0.5 GHz 30 25 20 15 10 5 0 MSG MAG 20 15 10 5 |S21e|2 1 10 0 1 10 100 1000 Collector Current, IC (mA) Frequency, f (Hz) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 VCE = 3 V f = 1 GHz INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 VCE = 3 V f = 2 GHz Insertion Power Gain, IS21eI2 Maximum Available Gain, MAG (dB) Maximum Stable Gain, MSG (dB) 15 Insertion Power Gain, IS21eI2 Maximum Available Gain, MAG (dB) Maximum Stable Gain, MSG (dB) MSG MAG 15 MSG 10 MAG |S21e| 10 2 5 5 |S21e|2 0 1 10 100 1000 0 1 10 100 1000 Collector Current, IC (mA) Collector Current, IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 Insertion Power Gain, IS21eI2 Maximum Available Gain, MAG (dB) Maximum Stable Gain, MSG (dB) VCE = 3 V f = 2.5 GHz 15 10 MSG MAG 5 |S21e|2 0 1 10 100 1000 Collector Current, IC (mA) NE664M04 TYPICAL PERFORMANCE CURVES (TA = 25C) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, & COLLECTOR EFFICIENCY vs. INPUT POWER 30 25 20 GP 15 10 5 c 0 -15 -10 -5 0 5 10 0 15 0 -5 0 5 10 150 100 50 VCE = 3.2 V, f = 0.9 GHz ICq = 20 mA, 1/2 Duty 300 OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, & COLLECTOR EFFICIENCY vs. INPUT POWER 30 300 VCE = 3.2 V, f = 2.4 GHz ICq = 20 mA, 1/2 Duty Pout 20 IC 15 10 5 c 15 20 0 25 GP 150 100 50 200 250 Collector Current, IC (mA) Collector Efficiency, C (%) Pout IC 200 Input Power, Pin (dBm) Input Power, Pin (dBm) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, & COLLECTOR EFFICIENCY vs. INPUT POWER 30 25 VCE = 3.2 V, f = 1.8 GHz ICq = 4 mA, 1/2 Duty 300 250 Pout 20 IC 15 GP 10 5 c 0 -10 -5 0 5 10 15 0 20 100 50 150 200 OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, & COLLECTOR EFFICIENCY vs. INPUT POWER 30 25 VCE = 3.2 V, f = 1.8 GHz ICq = 20 mA, 1/2 Duty Pout 20 IC 15 GP 10 5 c 0 -10 -5 0 5 10 15 0 20 150 100 50 200 300 250 Collector Current, IC (mA) Collector Efficiency, C (%) Input Power, Pin (dBm) Input Power, Pin (dBm) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, & COLLECTOR EFFICIENCY vs. INPUT POWER 30 25 VCE = 3.6 V, f = 1.8 GHz ICq = 4 mA, 1/2 Duty 300 OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, & COLLECTOR EFFICIENCY vs. INPUT POWER 30 VCE = 3.6 V, f = 1.8 GHz ICq = 20 mA, 1/2 Duty 25 300 250 Pout 20 IC 15 10 5 c 0 -10 GP 150 100 50 0 20 200 Collector Current, IC (mA) Collector Efficiency, C (%) Pout 20 IC 15 GP 10 5 c 0 -10 -5 0 5 10 15 0 20 100 50 150 200 -5 0 5 10 15 Input Power, Pin (dBm) Input Power, Pin (dBm) Collector Current, IC (mA) Collector Efficiency, C (%) Output Power, Pout (dBm) Power Gain, Gp (dB) Output Power, Pout (dBm) Power Gain, Gp (dB) 250 Collector Current, IC (mA) Collector Efficiency, C (%) Output Power, Pout (dBm) Power Gain, Gp (dB) Output Power, Pout (dBm) Power Gain, Gp (dB) Collector Current, IC (mA) Collector Efficiency, C (%) Output Power, Pout (dBm) Power Gain, Gp (dB) Output Power, Pout (dBm) Power Gain, Gp (dB) 250 25 NE664M04 LARGE SIGNAL IMPEDANCES FREQUENCY f (GHz) 0.9 1.8 2.4 COLLECTOR TO EMITTER VOLTAGE VCE (V) 2.8 to 3.6 2.8 to 3.6 2.8 to 3.6 SOURCE IMPEDANCE ZS () 8.4 - 5.2j 6.3 - 16.4j 5.9 - 22.1j LOAD IMPEDANCE ZL () 15.1- 4.3j 15.8- 6.9j 15.2- 17.9j f = 0.9 GHz ZL ZS RF input line GND ZS B E E C GND RF output line Tr. ZL ZL ZS f = 1.8 GHz f = 2.4 GHz ZL ZS ZL ZS NE664M04 TYPICAL SCATTERING PARAMETERS (TA = 25C) j50 j25 90 j100 S11 120 60 150 j10 30 0 10 25 50 100 0 180 0 -j10 -150 S22 -j25 -j50 -j100 -30 0.200 to 12.000GHz by 0.100 -120 -90 -60 0.200 to 12.000GHz by 0.100 NE664M04 VC = 1 V, IC = 10 mA FREQUENCY GHz 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 10.50 11.00 11.50 12.00 MAG 0.784 0.801 0.810 0.812 0.820 0.827 0.834 0.838 0.845 0.850 0.855 0.861 0.866 0.874 0.881 0.889 0.898 0.905 0.911 0.916 0.917 0.926 0.923 0.931 S11 ANG -161.6 178.1 166.2 157.2 149.0 141.5 133.6 125.9 118.0 110.4 102.3 95.2 88.6 82.3 76.5 72.0 67.3 63.5 60.2 56.1 52.2 48.4 44.4 40.0 MAG 6.573 3.389 2.271 1.710 1.378 1.163 1.013 0.901 0.816 0.743 0.678 0.624 0.573 0.530 0.485 0.451 0.422 0.391 0.360 0.337 0.321 0.305 0.295 0.290 S21 ANG 95.1 77.6 65.1 54.4 44.3 35.2 26.1 17.1 8.6 0.1 - 7.5 - 14.9 - 21.9 - 28.0 - 34.0 - 38.9 - 44.1 - 48.5 - 52.4 - 56.3 - 60.0 - 64.1 - 66.4 - 69.9 MAG 0.075 0.081 0.084 0.090 0.097 0.109 0.119 0.133 0.146 0.160 0.170 0.175 0.190 0.195 0.198 0.203 0.211 0.205 0.208 0.208 0.209 0.210 0.208 0.221 S12 ANG 19.0 16.3 18.9 18.1 20.8 20.6 18.7 16.2 11.6 8.6 5.7 0.9 - 3.9 - 7.7 - 12.6 - 17.2 - 21.6 - 25.6 - 30.2 - 33.9 - 38.7 - 42.2 - 46.5 - 50.7 MAG 0.491 0.454 0.460 0.467 0.476 0.482 0.498 0.508 0.525 0.546 0.570 0.599 0.625 0.650 0.676 0.696 0.716 0.733 0.740 0.768 0.782 0.793 0.811 0.816 S22 ANG -138.6 -164.9 -178.3 172.5 165.3 158.0 151.0 143.9 136.4 128.9 121.9 115.4 108.6 102.4 95.6 89.6 83.0 76.4 70.9 63.4 58.1 53.2 49.2 46.3 K 0.32 0.60 0.85 1.03 1.16 1.20 1.22 1.22 1.19 1.17 1.19 1.18 1.15 1.14 1.14 1.13 1.09 1.11 1.11 1.12 1.12 1.09 1.11 1.06 MAG1 (dB) 19.44 16.23 14.33 11.77 9.14 7.60 6.47 5.49 4.84 4.15 3.40 2.93 2.44 2.05 1.58 1.29 1.14 0.76 0.34 0.01 - 0.24 - 0.27 - 0.52 - 0.27 Note: 1. Gain Calculations: MAG = |S21| |S12| (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE664M04 TYPICAL SCATTERING PARAMETERS (TA = 25C) j50 90 120 j100 j25 S11 60 150 j10 30 S22 0 10 25 50 100 0 180 0 -j10 -150 0.200 to 12.000GHz by 0.100 -30 0.200 to 12.000GHz by 0.100 -j25 -j50 -j100 -120 -90 -60 NE664M04 VC = 2 V, IC = 100 mA FREQUENCY GHz 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 10.50 11.00 11.50 12.00 MAG 0.808 0.812 0.819 0.822 0.830 0.831 0.834 0.837 0.836 0.843 0.843 0.851 0.857 0.865 0.866 0.874 0.883 0.891 0.900 0.902 0.914 0.918 0.917 0.917 S11 ANG 177.3 167.0 158.7 151.3 143.8 137.2 129.9 122.8 115.1 107.7 100.1 93.1 86.5 80.8 75.4 70.6 66.5 62.6 59.2 55.6 51.8 48.1 44.1 39.7 MAG 9.415 4.762 3.176 2.387 1.925 1.616 1.410 1.256 1.138 1.035 0.945 0.868 0.800 0.742 0.688 0.641 0.591 0.551 0.517 0.491 0.456 0.435 0.419 0.413 S21 ANG 90.1 77.9 68.6 60.0 51.6 43.8 36.0 27.7 19.7 12.1 4.4 - 2.5 - 9.0 - 15.3 - 21.2 - 26.6 - 32.4 - 37.1 - 43.0 - 47.2 - 52.1 - 56.2 - 60.1 - 63.7 MAG 0.027 0.046 0.065 0.083 0.106 0.123 0.140 0.159 0.175 0.188 0.197 0.207 0.212 0.222 0.225 0.225 0.227 0.231 0.221 0.226 0.219 0.219 0.219 0.229 S12 ANG 50.0 62.1 57.6 53.6 48.0 43.3 37.1 30.9 25.2 18.1 11.6 6.4 - 0.2 - 4.7 - 10.8 - 15.7 - 19.8 - 25.9 - 30.6 - 34.5 - 39.4 - 43.8 - 47.4 - 50.6 MAG 0.652 0.650 0.657 0.662 0.666 0.670 0.669 0.672 0.680 0.691 0.701 0.715 0.731 0.745 0.751 0.761 0.772 0.774 0.788 0.796 0.805 0.810 0.822 0.822 S22 ANG -167.8 176.3 166.5 158.5 151.4 144.1 137.0 129.3 121.7 114.7 108.2 101.9 95.8 90.2 84.5 78.7 72.4 66.3 60.8 54.7 49.5 45.5 41.9 38.8 K 0.87 1.04 1.07 1.08 1.06 1.07 1.07 1.06 1.06 1.06 1.06 1.06 1.06 1.06 1.07 1.07 1.07 1.06 1.06 1.07 1.06 1.05 1.06 1.05 MAG1 (dB) 25.50 18.88 15.33 12.85 11.12 9.60 8.45 7.52 6.61 5.96 5.25 4.71 4.23 3.80 3.29 2.94 2.56 2.24 2.17 1.80 1.69 1.54 1.31 1.13 Note: 1. Gain Calculations: MAG = |S21| |S12| (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE664M04 TYPICAL SCATTERING PARAMETERS (TA = 25C) j50 j25 90 j100 S11 S22 120 60 150 30 j10 0 10 25 50 100 0 180 0 -j10 -150 0.200 to 12.000GHz by 0.100 -30 0.200 to 12.000GHz by 0.100 -j25 -j50 -j100 -120 -90 -60 NE664M04 VC = 3 V, IC = 200 mA FREQUENCY GHz 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 10.50 11.00 11.50 12.00 MAG 0.801 0.808 0.815 0.819 0.822 0.830 0.832 0.831 0.835 0.837 0.842 0.848 0.853 0.862 0.868 0.873 0.881 0.890 0.895 0.903 0.911 0.915 0.919 0.918 S11 ANG 175.9 166.3 158.4 150.9 143.9 136.8 129.7 122.5 115.0 107.6 100.2 93.0 86.4 80.5 75.4 70.4 66.5 62.7 59.3 55.7 52.0 48.3 44.1 39.8 MAG 9.856 4.975 3.310 2.483 1.996 1.676 1.461 1.299 1.171 1.069 0.979 0.896 0.828 0.764 0.707 0.660 0.611 0.572 0.532 0.498 0.466 0.445 0.430 0.426 S21 ANG 89.7 77.5 68.2 59.8 51.6 43.6 35.8 27.6 19.8 12.0 4.4 - 2.8 - 9.1 - 15.4 - 21.5 - 26.8 - 32.7 - 36.9 - 42.0 - 47.9 - 51.7 - 56.3 - 60.1 - 64.6 MAG 0.024 0.044 0.066 0.084 0.102 0.122 0.138 0.156 0.173 0.187 0.198 0.211 0.214 0.216 0.226 0.231 0.223 0.226 0.226 0.219 0.224 0.219 0.226 0.229 S12 ANG 66.8 68.0 62.1 57.6 52.3 43.9 39.2 32.6 26.9 19.5 11.8 7.0 1.2 - 4.7 - 9.8 - 15.6 - 20.4 - 24.0 - 30.2 - 33.8 - 38.3 - 43.0 - 46.2 - 49.5 MAG 0.624 0.632 0.633 0.638 0.644 0.648 0.653 0.656 0.662 0.672 0.683 0.698 0.711 0.724 0.736 0.748 0.750 0.764 0.771 0.779 0.793 0.794 0.810 0.811 S22 ANG -169.4 175.5 166.7 158.1 150.8 144.1 136.7 129.3 122.1 114.9 108.2 102.1 96.2 90.6 85.1 78.9 72.7 67.2 61.0 55.0 48.9 45.8 41.6 39.3 K 1.01 1.07 1.07 1.08 1.09 1.07 1.07 1.07 1.07 1.06 1.06 1.06 1.06 1.06 1.06 1.06 1.07 1.07 1.07 1.07 1.06 1.06 1.05 1.05 MAG1 (dB) 25.43 18.85 15.41 12.95 11.11 9.80 8.62 7.59 6.75 6.05 5.44 4.83 4.32 3.92 3.47 3.08 2.72 2.45 2.11 1.91 1.64 1.53 1.40 1.34 Note: 1. Gain Calculations: MAG = |S21| |S12| (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 04/04/2003 A Business Partner of NEC Compound Semiconductor Devices, Ltd. |
Price & Availability of NE664M04-T2
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |