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| MSAFA75N10C SANTA ANA DIVISION N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT PREVIEW DESCRIPTION New generation N-channel enhancement mode power MOSFET with rugged polysilicon gate structure and fast switching intrinsic rectifier. The TM very rugged Coolpack2 surface-mount package is lightweight, space saving and hermetically sealed for high reliability and/or military/space application. * * * * * * IMPORTANT: For the most current data, consult MICROSEMI's website: http://www.microsemi.com KEY FEATURES Ultrafast body diode Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Very low package inductance Very low thermal resistance Reverse polarity available upon request W W W .Microsemi .COM APPLICATIONS/BENEFITS APPLICATIONS/BENEFIT S * DC-DC converters * Motor controls * Uninterruptible Power Supply(UPS) * DC choppers * Synchronous rectification * Inverters MAXIMUM RATINGS @ 25C (unless otherwise specified) Description Drain-to-Source Voltage (Gate Shorted to Source) Continuous Gate-to-Source Voltage Transient Gate-to-Source Voltage Continuous Drain Current Peak Drain Current, pulse width limited by TJmax Repetitive Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy (3) Total Power Dissipation @Tc=25C Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Thermal Resistance, Junction to Case Symbol VDSS VGS VGSM ID25 ID100 IDM IAR EAR EAS PD Tj Max. 100 +/-30 +/-40 75 60 300 75 30 1500 540 -55 to +150 -55 to +150 75 300 0.23 Unit Volts Volts Volts Amps Amps Amps mJ mJ Watts C C Amps Amps C/W Tj= 25C Tj= 100C Tstg IS ISM JC MSAFA75N10C MSAFA75N10C Copyright 2000 MSC1594.PDF 2000-09-20 Microsemi Santa Ana Division 2830 S. Fairview Street, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989 Page 1 MSAFA75N10C SANTA ANA DIVISION N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT PREVIEW W W W .Microsemi .COM ELECTRICAL PARAMETERS @ 25C (unless otherwise specified) Description Drain-to-Source Breakdown Voltage (Gate Shorted to Source) Gate-to-Source Leakage Current Drain-to-Source Leakage Current (Zero Gate Voltage Drain Current) Gate Threshold Voltage Static Drain-to-Source On-State Resistance (1) Symbol BVDSS IGSS IDSS VGS(th) RDS(on) Conditions VGS = 0 V, ID = 250 A VGS = 30 VDC, VDS = 0 VDS =0.8*BVDSS VGS = 0 V VDS = VGS, ID = 1 mA VGS= 10V, ID= 37.5A ID= 75A ID= 37.5A TJ = 25C TJ = 25C TJ = 125C TJ = 25C TJ = 125C Min 100 Typ. Max 100 250 1000 Unit V nA A V 2.0 0.02 0.035 5100 1900 800 16 40 50 20 200 40 92 4.0 0.019 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Body Diode Forward Voltage (1) Reverse Recovery Time (Body Diode) Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd VSD trr Qrr VGS = 0 V, VDS = 25 V, f = 1 MHz 6120 2660 1200 32 40 75 40 300 60 180 1.3 pF VGS = 15 V, VDS = 50 V, ID = 37.5 A, RG = 1.6 ns VGS = 10 V, VDS = 50V, ID = 37.5A nC Is = 75A, VGS = 0 V IF = 10 A, di/dt = 100 A/s IF = 10 A, di/dt = 100 A/s 200 1.4 V ns C ELECTRICALS ELECTRICALS Copyright 2000 MSC1594.PDF 2000-09-20 Microsemi Santa Ana Division 2830 S. Fairview Street, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989 Page 2 MSAFA75N10C SANTA ANA DIVISION N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT PREVIEW W W W .Microsemi .COM CoolPackTM2 Mechanical Outline Note: Pin-out shown for standard polarity PACKAGE DATA PACKAGE DATA Copyright 2000 MSC1594.PDF 2000-09-20 Microsemi Santa Ana Division 2830 S. Fairview Street, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989 Page 3 MSAFA75N10C SANTA ANA DIVISION N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT PREVIEW W W W .Microsemi .COM NOTES NOTES Copyright 2000 MSC1594.PDF 2000-09-20 Microsemi Santa Ana Division 2830 S. Fairview Street, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989 Page 4 |
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