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 Schottky Barrier Diodes (SBD)
MA2P701, MA2P701A
Silicon epitaxial planar type
Unit : mm
For high-frequency rectification
0.5 0.1
1 2 5.0 0.5
I Features
* Low forward rise voltage VF, optimum for low-voltage rectification * Optimum for high-frequency rectification because of its short reverse recovery time (trr) * Allowing large-current rectification in spite of its small-size because of its low thermal resistance (Rth(j-a))
4.0 0.2 1.5 0.1
4.0 0.5 3.0 0.2
0.7 0.1
I Absolute Maximum Ratings Ta = 25C
Parameter Reverse voltage (DC) Repetitive peak reverse voltage MA2P701 MA2P701A MA2P701 MA2P701A IFM IF(AV) IFSM Tj Tstg VRRM Symbol VR Rating 20 40 20 40 2 1 6 125 -55 to +125 A A A C C V Unit V
1.5 0.2
1 : Anode 2 : Cathode Mini Type Power Package (2pin)
Peak forward current Average forward current*1 Non-repetitive peak forward surge current*2 Junction temperature Storage temperature
Marking Symbol * MA2P701 : 701 * MA2P701A : 701A
Note) *1 : With a printed-circuit board (copper foil area cathode side) 2 mm x 10 mm or more (copper foil area anode side) 1 mm x 10 mm or more. Board thickness t = 1.6 mm *2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
I Electrical Characteristics Ta = 25C
Parameter Reverse current (DC) MA2P701 MA2P701A Forward voltage (DC) Terminal capacitance Reverse recovery time*2 High voltage rectification*1 VF Ct trr Rth(j-a) Symbol IR VR = 20 V VR = 40 V IF = 1.0 A VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 210 14 0.15 Conditions Min Typ Max 1 2 0.55 V pF ns C/mW Unit mA
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 150 MHz 10 mm 10 mm 3. *1 : With a printed-circuit board (copper foil area cathode side) K A 2 mm x 10 mm or more (copper foil area anode side) 2 mm 1 mm 1 mm x 10 mm or more. Board thickness t = 1.6 mm *2 : trr measuring instrument
0 to 0.14
0.4 0.2
0.3 0.1
1
MA2P701, MA2P701A
Schottky Barrier Diodes (SBD)
Common characteristics charts
Bias Application Unit N-50BU
IF V F
104
VF Ta
0.8 0.7
A
103
Ta = 125C
- 20C
Forward current IF (mA)
Forward voltage VF (V)
0.6 0.5 0.4 0.3 0.2 50 mA 0.1 IF = 1 A
Pulse Generator (PG-10N) Rs = 50
W.F.Analyzer (SAS-8130) Ri = 50
75C 102 25C
Input Pulse tr 10% tp t IF
Output Pulse
10
trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100
1
VR
90% tp = 2 s tr = 0.35 ns = 0.05
10-1
0
0.2
0.4
0.6
0.8
1.0
0 -40
0
40
80
120
160
Forward voltage VF
(V)
Ambient temperature Ta ( C)
trr measuring instrument
Characteristics charts of MA2P701 IR VR
10 Ta = 125C 1 300 f = 1 MHz Ta = 25C
Ct VR
10
IR Ta
VR = 20 V 10 V
Terminal capacitance Ct (pF)
Reverse current IR (mA)
Reverse current IR (mA)
0 5 10 15 20 25 30
1
75C 10-1
200
10-1
10-2 25C 10-3
100
10-2
10-4
0
5
10
15
20
25
30
0
10-3 -40
0
40
80
120
160
Reverse voltage VR (V)
Reverse voltage VR (V)
Ambient temperature Ta (C)
Characteristics charts of MA2P701A IR VR
10 Ta = 125C 300 f = 1 MHz Ta = 25C
Ct VR
10
IR T a
VR = 40 V 20 V
1
Terminal capacitance Ct (pF)
Reverse current IR (mA)
Reverse current IR (mA)
0 5 10 15 20 25 30
1
75C 10-1
200
10-1
10-2
25C
100
10-3
10-2
10-4
0
10
20
30
40
50
60
0
10-3 -40
0
40
80
120
160
200
Reverse voltage VR (V)
Reverse voltage VR (V)
Ambient temperature Ta (C)
2


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