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| SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This planer stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS. D KMB7D0DN40QA Dual N-Ch Trench MOSFET H T P G L FEATURES VDSS=40V, ID=7A. Drain-Source ON Resistance. RDS(ON)=25m RDS(ON)=45m (Max.) @VGS=10V (Max.) @VGS=4.5V 1 8 5 B1 B2 4 A Super High Dense Cell Design High Power and Current Handing Capability DIM A B1 B2 D G H L P T MILLIMETERS _ 4.85 + 0.2 _ 3.94 + 0.2 _ 6.02 + 0.3 _ 0.4 + 0.1 0.15+0.1/-0.05 _ 1.63 + 0.2 _ 0.65 + 0.2 1.27 0.20+0.1/-0.05 Maximum Ratings (Ta=25 CHARACTERISTIC Drain Source Voltage Gate Source Voltage Unless otherwise noted) SYMBOL VDSS VGSS DC ID * (note1) PATING 40 25 7 22 1.7 2 UNIT V V A A A W W FLP-8 Drain Current Pulsed Drain Source Diode Forward Current 25 Drain Power Dissipation 100 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Tj Tstg RthJA* IDP IS PD * 1.44 -55~150 -55~150 62.5 /W PIN CONNECTION (TOP VIEW) S1 G1 S2 G2 1 8 D1 D1 S2 D1 D1 D2 D2 S1 D2 D2 G2 G1 2 7 3 6 4 5 N-Channel MOSFET P-Channel MOSFET 2007. 4. 3 Revision No : 0 1/4 KMB7D0DN40QA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage Drain-Source ON Resistance On-State Drain Current Forward Transconductance Dynamic (Note 3) Input Capaclitance Ouput Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delat Time Turn-On Rise Time Turn-On Deley Time Turn-On Fall Time Source-Drain Diode Ratings Source-Drain Forward Voltage Noter 1. Pulse Test : Pulse width 10 , Duty cycle 1% VSDF IDR=1.7A, VGS=0V 0.78 1.2 V Ciss Coss Crss VDS=20V, VGS=10V, ID=6A Qg VDS=20V, VGS=4.5V, ID=6A Qgs VDS=20V, VGS=4.5V, ID=6A Qgd td(on) tr td(off) tr VDD=20V, VGS=10V ID=1A, RG=3.3 (Note 1) 3.3 16.7 3.6 28.7 10.1 5 19 5 ns 38 14 8.7 2.8 12 nC 4 VDS=25V, f=1MHz, VGS=OV 947 117 77 18.2 1231 152 100 24 pF BVDSS IDSS IGSS Vth RDS(ON) VGS=4.5V, ID=5A ID(ON) Gfs VDS=5V, VGS=10A VDS=5V, ID=6A 15 35 8 45 A S ID=250 A, VGS=0V VDS=32V, VGS=0V VGS= 25V, VDS=0V 40 1 1.8 20 1 100 2.5 25 m V A A V SYMBOL ) UNLESS OTHERWISE NOTED TEST CONDITION MIN. TYP. MAX. UNIT VDS=VGS, ID=250 A VGS=10.0V, ID=6A Upper electrical characteristics can be changed because these are tentative specifications. Graphs are omitted because these are tentative specifications. 2007. 4. 3 Revision No : 0 2/4 KMB7D0DN40QA Fig1. ID - VDS 20 VGS=10,5,4.5V Fig2. RDS(on) - ID Drain Source On Resistance RDS(ON) () Common Source Tc=25 C Pulse Test 0.2 0.16 0.12 0.08 Drain Current ID (A) 16 12 8 4.0V Common Source Tc=25 C Pulse Test 3.5V 4.5V 4 VGS=3.0V 0.04 VGS=10.0V 0 0 2 4 6 8 10 0 0 4 8 12 16 20 Drain - Source Voltage VDS (V) Drain - Current ID (A) Fig3. ID - VGS 24 Common Source VDS=10V Pulse Test Fig4. RDS(on) - Tj 200 Common Source VDS=10V Pulse Test Drain Current ID (A) 20 16 12 8 4 0 Normalized Drain Source On Resistance RDS(ON) (m) 160 120 80 40 0 25 C Tc=-55 C 125 C ID=6A 1 2 3 4 5 -80 -40 0 40 80 120 160 Gate-Source Volatage VGS (V) Junction Temperature Tj ( C ) Fig5. Vth - Tj Gate Threshold Voltage Vth (V) Reverse Drain Current IDR (A) 5 Common Source VGS=VDS ID=250A 4 Pulse Test Fig6. IDR - VSDF 10 8 6 4 2 0 0 0.4 0.8 1.2 1.6 2.0 Common Source Tc= 25 C Pulse Test 3 2 1 0 -80 -40 0 40 80 120 160 Junction Temperature Tj ( C ) Source - Drain Forward Voltage VSDF (V) 2007. 4. 3 Revision No : 0 3/4 KMB7D0DN40QA Fig.7 Gate Charge Circuit and Wave Form VGS 10 V Schottky Diode ID 0.5 VDSS ID 1.0 mA VDS VGS Q Qgs Qgd Qg Fig.8 Resistive Load Switching RL VDS 90% 0.5 VDSS 6 VDS 10 V VGS 10% td(on) td(off) VGS tr ton tf toff 2007. 4. 3 Revision No : 0 4/4 |
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