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| SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS. KMB3D0P30SA P-Ch Trench MOSFET L E B L FEATURES A H 2 G 1 3 VDSS=-30V, ID=-3A Drain-Source ON Resistance RDS(ON)=80m (Max.) @ VGS=-10V RDS(ON)=140m (Max.) @ VGS=-4.5V Super Hige Dense Cell Design P P DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 C N K M SOT-23 MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage DC@TA=25 Drain Current DC@TA=70 Pulsed Drain-Source-Diode Forward Current Drain Power Dissipation TA=25 TA=70 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Note : *Sorface Mounted on FR4 Board PIN CONNECTION (TOP VIEW) Tj Tstg RthJA* IDP IS PD* 0.8 150 -55 150 100 /W ) SYMBOL VDSS VGSS I D* -2.5 -12 -1.25 1.25 W A A N-Ch -30 20 -3 UNIT V V D 3 3 2 1 2 1 G S 2007. 6. 28 Revision No : 1 J D 1/5 KMB3D0P30SA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage Drain-Source ON Resistance Forward Transconductance Dynamic Input Capaclitance Ouput Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delat Time Turn-On Rise Time Turn-On Deley Time Turn-On Fall Time Source-Drain Diode Ratings Source-Drain Forward Voltage NOTE 1> * : Pulse Test : Pulse width <300 VSDF* VGS=0V, IDR=-1.25A -1.2 V Ciss Coss Crss Qg* Qgs* Qgd* td(on)* tr* td(off)* tr* VDD=-15V, VGS=-10V ID=-1A, RG=6 VDS=-15V, VGS=-10V, ID=-3A VDS=-15V, VGS= 0V, f=1MHz, 565 126 75 10 1.9 2 10 9 27 7 15 20 20 ns 50 16 nC pF BVDSS IDSS VGS=0V, VDS=-24V, Tj=55 IGSS Vth RDS(ON)* VGS=-4.5V, ID=-2.5A gfs* VDS=-10V, ID=-3A 103 4.5 140 S VGS= 20V, VDS=0V -1.0 64 -10 100 80 m nA V IDS=-250 A, VGS=0V, VGS=0V, VDS=-24V -30 -1 A V SYMBOL ) TEST CONDITION MIN. TYP. MAX. UNIT VDS=VGS, ID=250 A VGS=-10V, ID=-3A , Duty cycle < 2% 2007. 6. 28 Revision No : 1 2/5 KMB3D0P30SA Fig1. ID - VDS Drain Source On Resistance RDS(ON) () 12 10.0V Fig2. RDS-ID 200 Common Source Tc=25 C Pulse Test 5.0V 3.5V 4.5V Drain Current ID (A) 10 8 6 4 2 0 0 2 4 6 8 4.0V VGS=4.5V 100 VGS=10V VGS=3.0V 0 0 4 8 12 16 10 Drain - Source Voltage VDS (V) Drain - Current ID (A) Fig3. ID - VGS 12 Common Source VDS=5V Pulse Test Fig4. RDS(on) - Tj 120 Common Source VDS=10V, ID=3A Pulse Test Normalized Drain-Source On-Resistance RDS(ON) (m) Drain Current ID (A) 100 80 60 40 20 0 8 4 25 C 125 C -55 C 0 0 1 2 3 4 5 -75 -50 -25 0 25 50 75 100 125 150 Gate-Source Volatage VGS (V) Junction Temperature Tj ( C ) Fig5. Vth - Tj Reverse Source-Drain Current IDR (A) Gate Threshold Voltage Vth (V) 5 Common Source VGS=VDS ID=250A 4 Pulse Test Fig6. IDR - VSDF 10 8 6 4 2 0 0 0.4 0.8 1.2 1.6 2.0 Common Source Tc= 25 C Pulse Test 3 2 1 0 -75 -50 -25 0 25 50 75 100 125 150 Junction Temperature Tj ( C) Source - Drain Forward Voltage VSDF (V) 2007. 6. 28 Revision No : 1 3/5 KMB3D0P30SA Fig7. Safe Operation Area Operation in this area is limited by RDS(ON) Drain Current ID (A) 101 1 ms 100 10 ms 100 ms 1s 10s DC VGS= 10V SINGLE PULSE 10-1 10-2 10-1 100 101 30 Drain - Source Voltage VDS (V) Fig8. Transient Thermal Response Curve Normalized Transient Thermal Resistance 100 D = 0.5 0.2 0.1 0.05 0.02 PDM t1 t2 SINGLE 10-1 10-2 10-3 10-2 10-1 100 101 - Duty = t/T 102 500 Square Wave Pulse Duration (sec) 2007. 6. 28 Revision No : 1 4/5 KMB3D0P30SA Fig9. Gate Charge Circuit and Wave Form VGS -4.5V ID Schottky Diode 0.5 VDSS 1.0 mA ID VDS Qgs VGS Qgd Qg Q Fig10. Resistive Load Switching RL td(on) VGS ton tr td(off) toff tf 0.5 VDSS 50 VDS -10 V 10% VGS VDS 90% 2007. 6. 28 Revision No : 1 5/5 |
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