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| SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance,, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for portable for portable equipment and SMPS. D KMB014P30QA P-Ch Trench MOSFET H T P G L FEATURES VDSS=-30V, ID=-14A. Drain-Source ON Resistance. RDS(ON)=10m (Max.) @ VGS=-10V RDS(ON)=18m (Max.) @ VGS=-4.5V Super High Dense Cell Design 1 4 B1 B2 8 5 A MOSFET Maximum Ratings (Ta=25 CHARACTERISTIC Drain Source Voltage Gate Source Voltage DC Drain Current Pulsed Drain Source Diode Forward Current Drain Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Note : *Surface Mounted on FR4 Board Unless otherwise noted) SYMBOL PATING VDSS VGSS ID* IDP IS P D* Tj Tstg RthJA* -30 25 -14 -70 -1.7 2.5 150 -55~150 50 /W UNIT V V A A A W DIM A B1 B2 D G H L P T MILLIMETERS _ 4.85 + 0.2 _ 3.94 + 0.2 _ 6.02 + 0.3 _ 0.4 + 0.1 0.15+0.1/-0.05 _ 1.63 + 0.2 _ 0.65 + 0.2 1.27 0.20+0.1/-0.05 FLP-8 KMB014P 30QA 706 PIN CONNECTION (TOP VIEW) S S S G 1 8 D D D D 1 2 3 8 7 6 5 2 7 3 6 4 4 5 2007. 6. 29 Revision No : 1 1/4 KMB014P30QA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage Drain-Source ON Resistance On-State Drain Current Forward Transconductance Dynamic Input Capaclitance Ouput Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delat Time Turn-On Rise Time Turn-On Deley Time Turn-On Fall Time Source-Drain Diode Ratings Source-Drain Forward Voltage Note 1. Pulse Test : Pulse width 10 , Duty cycle 1% VSDF* VGS=0V, IDR=-1.7A, -0.73 -1.2 V Ciss Coss Crss VDS=-15V, VGS=-10V, ID=-12A Qg* VDS=-15V, VGS=-4.5V, ID=-12A Qgs* VDS=-15V, VGS=-10V, ID=-12A Qgd* td(on)* tr* td(off)* tr* VDD=-15V, VGS=-10V RL=12A, RG=3 17.5 48.5 20.3 110.8 52.8 ns 32.6 10.9 nC VDS=15V, VGS=0V, f=1MHz 3625 980 705 65.5 pF BVDSS IDSS IGSS Vth RDS(ON)* VGS=-4.5V, ID=-10A ID(ON)* Gfs* VDS=-5V, VGS=-10V VDS=-5V, ID=-10A -50 12 14 18 A S IDS=-250 A, VGS=0V VDS=-24V, VGS=0V VGS= 25V, VDS=0V -30 -1.4 -1.9 8.5 -1 100 -2.6 10 m V A nA V SYMBOL ) UNLESS OTHERWISE NOTED TEST CONDITION MIN. TYP. MAX. UNIT VDS=VGS, ID=-250 A VGS=-10V, ID=-12A 2007. 6. 29 Revision No : 1 2/2 KMB014P30QA Fig 1. ID - VDS 25 -VGS=3.5V Fig 2. ID - VGS 25 Drain Current ID (A) Drain Current ID (A) 20 15 10 -VGS=4V -VGS=4.5V -VGS=10V 20 15 10 5 0 125 C 25 C -55 C -VGS=3V 5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.6 1.2 1.8 2.4 3.0 3.6 Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V) Fig 3. C - VDS 6000 5000 1.8 VGS =-10V ID= -12A Fig 4. RDS(ON) - Tj Normalized On Resistance 1.6 1.4 1.2 1.0 0.8 0.6 -55 Capacitance (pF) Ciss 4000 3000 2000 1000 Crss Coss 0 0 5 10 15 20 25 30 -25 0 25 50 75 100 125 Drain - Source Voltage VDS (V) Junction Temperature Tj ( C) Fig 5. Vth - Tj 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 Fig 6. IDR - VSD Reverse Source-Drain Current IDR (A) VDS = VGS IDS = 250A Normalized Threshold Voltage Vth 20 10 VGS = 0V 1 0.2 0.4 0.6 0.8 1.0 1.2 Junction Temperature Tj ( C ) Source-Drain Forword Voltage VSDF (V) 2007. 6. 29 Revision No : 1 3/4 KMB014P30QA Fig 7. Qg - VGS 10 Fig8. Safe Operation Area 102 Gate - Source Voltage VGS (V) VDS = -15V ID = -12A Drain Current ID (A) 8 101 1ms 6 100 Operation in this area is limited by RDS(ON) 10ms 100ms 1s 10s DC 4 10-1 VGS= 10V SINGLE PULSE 2 0 0 11 22 33 44 55 66 77 88 10-2 10-1 100 101 102 103 Total Gate Charge Qg (nC) Drain - Source Voltage VDS (V) Fig9. Transient Thermal Response Curve Normalized Transient Thermal Resistance 100 Duty Cycle = 0.5 PDM t1 0.1 0.05 0.02 Single Pluse t2 t1 0.2 10-1 1. Duty Cycle, D = t2 2. Per Unit Base = RJA= 62.5 C/W 10-2 10-1 100 101 102 103 10-2 10-4 10-3 Square Wave Pulse Duration (sec) 2007. 6. 29 Revision No : 1 4/4 |
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