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| Infrared Emitting Diodes(GaAIAs) KBL-1KL3 1. Description The KBL-1KL3 is a GaAlAs IRED mounted in durable, hermetically sealea TO-18 metal can type,which provide years of reliable performance, even under demanding conditions such as use outdoors. 2. Features Narrow beam angle Durable High reliability in demanding environments 3. Applications Optical encoders Fiber optic communications c e c e 4. Package Outline Dimensions (Unit: mm) 5. Absolute Maximum Ratings Parameter Reverse Voltage Forward Current Pulse Forward Current (see notes *1) Power Dissipation Operating Temperature Storage Temperature Soldering Temperature (see notes *2) Symbol VR IF IFP PD Topr. Tstg. Tsol. Ratings 5 50 0.5 120 -40 ~ +100 -55 ~ +125 260 Unit V I A N E E E Notes : *1. 100KHz , Duty 10% 2. Distance from end of the package = 2.0mm, time = 5sec max. 6. Electro-optical Characteristics Parameter Forward Voltage Reverse Voltage Capacitance Out power * 1 Radiant Intensity Peak Emission Wavelength Spectral Half Bandwidth Half Angle [TA = 25E] Symbol VF VR CT PO IV p e Ae A e Conditions IF = 20I IR = 10 E f = 1MHz IF = 20I IF = 20I IF = 50I IF = 20I Min. Typ. Max. 5 10 1.8 40 18 450 660 20 8 2.2 - Unit V V pF mV mcd deg. * 1 : measured by our TO-18 package type tester KKC-QM-043-2 1/2 Infrared Emitting Diodes(GaAIAs) KBL-1KL3 Typical Characteristics aPower dissipation Vs Ambient temperature a Radiant intensity Vs Forward current Power dissipation D (P ) Ambient temperature (Ta) Relative radiant intensity (Po) (%) 10 1 0.1 Radiant intensity 100 80 60 40 20 -20 0 20 40 60 80 100(E) Ambient temperature (Ta) Radiant intensity (Po) Forward currentF (I ) aRelative radiant intensity Vs Ambient temperature aRelative intensity Vs Wavelength Ta=25E 0 400500 600 700 800 9001000 () 1100 Wavelength(e) e Wavelength() aSensitivity diagram Vs Angular displacement aForward current Vs Forward voltage Angle (deg.) Forward currentF (I ) Forward voltage (V ) F KKC-QM-043-2 2/2 Relative intensity(%) |
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