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Advance Technical Data High Voltage IGBT IXGH 16N170A VCES IXGT 16N170A IC25 VCE(sat) tfi(typ) = 1700 V = 16 A = 5.0 V = 40 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC PC TJ TJM Tstg Md Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 Clamped inductive load TJ = 125C, VCE = 1200 V; VGE = 15 V, RG = 22 TC = 25C Maximum Ratings 1700 1700 20 30 16 8 40 ICM = 40 @ 0.8 VCES 10 190 -55 ... +150 150 -55 ... +150 V V V V A A A A TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) G C (TAB) C E C = Collector, TAB = Collector s W C C C G = Gate, E = Emitter, Mounting torque (M3) (TO-247) 1.13/10Nm/lb.in. 300 C 6 4 g g Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247 TO-268 Features International standard packages JEDEC TO-268 and JEDEC TO-247 AD High current handling capability MOS Gate turn-on - drive simplicity Rugged NPT structure Molding epoxies meet UL 94 V-0 flammability classification Applications Capacitor discharge & pulser circuits AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Advantages High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole) Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1700 3.0 Note 1 TJ = 25C TJ = 125C 5.0 50 750 100 TJ = 25C TJ = 125C 4.0 4.8 5.0 V V A A nA V V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 A, VGE = 0 V = 250 A, VCE = VGE VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V (c) 2003 IXYS All rights reserved DS98993(01/03) IXGH IXGT Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 6 10 1700 VCE = 25 V, VGE = 0 V, f = 1 MHz 83 30 65 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC25, VGE = 15 V RG = 10 , VCE = 0.8 VCES Note 3 13 24 36 57 200 40 0.9 Inductive load, TJ = 125C IC = IC25, VGE = 15 V RG = 10 , VCE = 0.8 VCES Note 3 38 59 1.5 200 55 1.1 350 150 S pF pF pF nC nC nC ns ns ns ns Dim. e 16N170A 16N170A TO-247 AD Outline gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = IC25; VCE = 10 V Note 2 P 1.5 mJ ns ns mJ ns ns mJ 0.65 K/W K/W Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 2.2 2.6 A2 b 1.0 1.4 1.65 2.13 b1 2.87 3.12 b2 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline (TO-247) 0.25 Notes: 1. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. Pulse test, t 300 s, duty cycle 2 % Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG. Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 2. 3. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
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