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Previous Datasheet Index Next Data Sheet PD -9.1255 IRL630 HEXFET (R) Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(ON) Specified at V GS = 4V & 5V 150C Operating Temperature Fast Switching Ease of paralleling Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. VDSS = 200V RDS(on) = 0.40 ID = 9.0A Absolute Maximum Ratings Parameter ID @ T C = 25C ID @ T C = 100C IDM PD @T C = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, V GS @ 5.0V Continuous Drain Current, V GS @ 5.0V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 9.0 5.7 36 74 0.59 10 250 9.0 7.4 5.0 -55 to + 150 300 (1.6mm from case) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Min. ---- ---- ---- Typ. ---- 0.50 ---- Max. 1.7 ---- 62 Units C/W To Order Revision 0 Previous Datasheet Index Next Data Sheet IRL630 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Min. 200 --- --- --- 1.0 4.8 --- --- --- --- --- --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, I D = 1mA 0.40 VGS = 5.0V, I D = 5.4A 0.50 VGS = 4.0V, I D = 4.5A 2.0 V VDS = VGS, ID = 250A --- S VDS = 50V, ID = 5.4A 25 VDS = 200V, VGS = 0V A 250 VDS = 160V, VGS = 0V, T J = 125C 100 VGS = 10V nA -100 VGS = -10V 40 ID = 9.0A 5.5 nC VDS = 160V 24 VGS = 10V, See Fig. 6 and 13 --- VDD = 100V ns --- ID = 9.0A --- RG = 6.0 --- RD = 11, See Fig. 10 Between lead, --- 4.5 --- 6mm (0.25in.) nH from package --- 7.5 --- and center of die contact --- 1100 --- VGS = 0V --- 220 --- pF VDS = 25V --- 70 --- = 1.0MHz, See Fig. 5 Typ. --- 0.27 --- --- --- --- --- --- --- --- --- --- --- 8.0 57 38 33 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units --- --- --- --- --- --- --- --- 230 1.7 9.0 A 36 2.0 350 2.6 V ns C Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, I S = 9.0A, V GS = 0V TJ = 25C, I F = 9.0A di/dt = 100A/s S+LD) Intrinsic turn-on time is negligible (turn-on is dominated by L Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD 9.0A, di/dt 120A/s, V DD V(BR)DSS, T J 150C Pulse width 300s; duty cycle 2%. VDD = 25V, starting T J = 25C, L = 4.6mH R G = 25, IAS = 9.0A. (See Figure 12) To Order Previous Datasheet Index Next Data Sheet IRL630 100 VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.75V 2.50V BOTTOM 2.25V TOP 10 1 2.25V 20s PULSE WIDTH Tc = 25C 0.1 1 10 100 0.1 A VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics, TC = 25oC I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) D Fig 2. Typical Output Characteristics, TC = 150oC R DS(on) , Drain-to-Source On Resistance (Normalized) 100 2.5 ID = 9.0A I D , Drain-to-Source Current (A) 2.0 10 TJ = 150C 1.5 1 TJ = 25C 1.0 0.1 0.5 0.01 2.0 2.5 3.0 3.5 VDS = 50V 20s PULSE WIDTH 4.0 4.5 A 5.0 0.0 -60 -40 -20 VGS = 5.0V 0 20 40 60 A 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature To Order Previous Datasheet Index Next Data Sheet IRL630 2000 V GS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz Ciss = Cgs + C gd , Cds SHORTED Crss = C gd Coss = Cds + C gd 10 I D = 9.0A VDS = 160V VDS = 100V VDS = 40V 8 C, Capacitance (pF) 1500 Ciss 1000 6 4 Coss 500 Crss 0 1 10 2 A 100 0 0 10 20 FOR TEST CIRCUIT SEE FIGURE 13 30 40 A VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 10s 10 I D , Drain Current (A) 10 100s TJ = 150C TJ = 25C 1 1ms 1 10ms 100ms 0.1 0 0.4 0.8 1.2 VGS = 0V A 0.1 1 TC = 25C TJ = 150C Single Pulse 10 100 10 00 1.6 V SD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area To Order Previous Datasheet Index Next Data Sheet IRL630 VDS 10 RD VGS RG D.U.T. VDD ID, Drain Current (Amps) 8 5.0 V 6 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 4 2 0 25 50 75 100 125 150 A TC , Case Temperature (C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 PDM t 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) N o te s : 1 . D u ty fa c to r D = t / t 12 2 . P e a k TJ = P D M x Z th J C + T C 1 t 2 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 A A t 1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case To Order Previous Datasheet Index Next Data Sheet IRL630 EAS , Single Pulse Avalanche Energy (mJ) 5.0V 600 TOP 500 ID 9.0A 5.7A BOTTOM 4.0A Fig 12a. Unclamped Inductive Test Circuit 400 300 200 100 0 VDD = 50V 25 50 75 100 125 A 150 Starting TJ , Juntion Temperature (C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms 5.0V Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit To Order Previous Datasheet Index Next Data Sheet IRL630 Peak Diode Recovery dv/dt Test Circuit D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer RG * * * * dv/dt controlled by R G Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD * * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS To Order Previous Datasheet Index Next Data Sheet IRL630 Package Outline TO-220AB Outline 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -B- -A6.47 (.255) 6.10 (.240) 1.15 (.045) MIN 1 2 3 4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) NOTES: 1 DIMENSIONS & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 DIMENSIONS ARE SHOW N MILLIMETERS (INCHES). 4 CONFORMS TO JEDEC OUTLINE TO-220AB. 3X 14.09 (.555) 13.47 (.530) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 4.06 (.160) 3.55 (.140) 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) MBAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X 2.92 (.115) 2.64 (.104) CONFORMS TO JEDEC OUTLINE TO-220AB Dimensions in Millimeters and (Inches) Part Marking Information TO-220AB PART NUMBER IRF1010 9246 9B ASSEMBLY LOT CODE 1M DATE CODE (YYWW) YY = YEAR WW = WEEK EXAMPLE: THIS IS AN IRF1010 WITH ASSEMBLY LOT CODE 9B1M INTERNATIONAL RECTIFIER LOGO WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145 10111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371 Data and specifications subject to change without notice. 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