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PD-94661
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number Radiation Level IRHNJ597Z30 100K Rads (Si) IRHNJ593Z30 300K Rads (Si) RDS(on) 0.07 0.07 ID -22A* -22A*
IRHNJ597Z30 30V, P-CHANNEL
5
TECHNOLOGY
SMD-0.5
International Rectifier's R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID@ VGS = -12V, TC =25C ID@ VGS = -12V, TC =100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight * Current is limited by package For footnotes refer to the last page -22* -18 -88 75 0.6 20 152 -22 7.5 -1.57 -55 to 150 300 ( for 5s ) 1.0 ( Typical )
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
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01/07/05
IRHNJ597Z30
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage
Min
-30
Typ Max Units
-- -0.03 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 -- -- 0.07 -4.0 -- -10 -25 -100 100 45 20 13 25 100 50 70 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = -1.0mA Reference to 25C, ID = -1.0mA VGS = -12V, ID = -18A A VDS = VGS, ID = -1.0mA VDS = -15V, IDS = -18A A V DS= -24V ,VGS=0V VDS = -24V, VGS = 0V, TJ =125C VGS = -20V VGS = 20V VGS =-12V, ID = -22A VDS = -15V VDD = -15V, ID = -22A, VGS = -12V, RG = 7.5,
BV DSS /T J Temperature Coefficient of Breakdown -- Voltage RDS(on) Static Drain-to-Source On-State -- Resistance VGS(th) Gate Threshold Voltage -2.0 g fs Forward Transconductance 12 IDSS Zero Gate Voltage Drain Current -- -- IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance -- -- -- -- -- -- -- -- -- --
nA nC
ns
nH
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = -25V f = 1.0MHz f = 1.0MHz, open drain
Ciss C oss C rss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance
-- -- --
1670 975 126 6.6
-- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- -22* -88 -5.0 75 125
Test Conditions
A
V ns nC Tj = 25C, IS = -22A, VGS = 0V A Tj = 25C, IF =-22A, di/dt -100A/s VDD -25V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC RthJ-PCB Junction-to-Case Junction-to-PC board
Min Typ Max
-- -- -- 6.9 1.67 --
Units
C/W
Test Conditions
soldered to a 2 square copper-clad board
Note: Corresponding Spice and Saber models are available on International Rectifier website. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHNJ597Z30
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source A On-State Resistance (TO-3) Static Drain-to-Source A On-State Resistance (SMD-0.5) Diode Forward Voltage A 100K Rads(Si)1 Min Max -30 -2.0 -- -- -- -- -- -- -- -4.0 -100 100 -10 0.072 0.070 -5.0 300KRads(Si)2 Min Max -30 -2.0 -- -- -- -- -- -- -- -4.0 -100 100 -10 0.072 0.070 -5.0 Units V nA A V
Test Conditions
VGS = 0V, ID = -1.0mA VGS = VDS , ID = -1.0mA VGS =-20V VGS = 20 V VDS=-24V, VGS =0V VGS = -12V, ID = -18A VGS = -12V, ID = -18A VGS = 0V, I S = -22A
1. Part number IRHNJ597Z30 2. Part number IRHNJ593Z30
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Br I Au LET (MeV/(mg/cm2)) 37.5 59.7 81.4 Energy (MeV) 278.5 320 332 VDS (V) Range (m) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V 36 - 30 - 30 - 30 - 30 - 30 31 - 30 - 30 - 30 - 30 - 25 27 - 30 - 30 - 30 - 25 --
-35 -30 -25 -20 -15 -10 -5 0 0 5 10 VGS 15 20
Br I Au
For footnotes refer to the last page
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VDS
Fig a. Single Event Effect, Safe Operating Area
3
IRHNJ597Z30
Pre-Irradiation
1000
1000
VGS TOP -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
-I D, Drain-to-Source Current (A)
100
-I D, Drain-to-Source Current (A)
100
10
-5.0V
10
-5.0V
60s PULSE WIDTH Tj = 25C 1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V)
60s PULSE WIDTH Tj = 150C 1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
1.5
T J = 150C
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = -22A
-I D, Drain-to-Source Current (A)
1.0
T J = 25C
VDS = -15V 15 60s PULSE WIDTH 10 5 5.5 6 6.5 7 7.5 8 8.5 9 -VGS, Gate-to-Source Voltage (V)
VGS = -12V
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHNJ597Z30
3500 3000 2500 2000 1500 1000 500
-VGS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
20 ID = -22A 16 VDS= -24V VDS= -15V
C, Capacitance (pF)
Ciss Coss
12
8
4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 10 20 30 40 50 60
Crss
0 1 10 100
-VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100 T J = 150C T J = 25C
1000
-I SD , Reverse Drain Current (A)
-I D, Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on) 100
10
100s
10 Tc = 25C Tj = 150C Single Pulse 1 10 -V DS , Drain-to-Source Voltage (V)
1
1ms 10ms
VGS = 0V 0.1 0 1 2 3 4 5 6 -VSD , Source-to-Drain Voltage (V)
1
100
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRHNJ597Z30
Pre-Irradiation
30
LIMITED BY PACKAGE
V GS
24
V DS
RD
-ID , Drain Current (A)
18
V GS
Pulse Width 1 s Duty Factor 0.1 %
12
Fig 10a. Switching Time Test Circuit
6
VGS 10%
td(on) tr t d(off) tf
0
25
50
75
100
125
150
TC , Case Temperature ( C)
90%
Fig 9. Maximum Drain Current Vs. Case Temperature
VDS
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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-
RG
D.U.T. V DD
Pre-Irradiation
IRHNJ597Z30
EAS , Single Pulse Avalanche Energy (mJ)
VDS
L
300
RG
D.U.T
IAS
+
DRIVER
V DD VDD
A
250
VGS -20V
ID -9.8A -14A BOTTOM -22A TOP
tp
0.01
200
150
15V
100
Fig 12a. Unclamped Inductive Test Circuit
I AS
50
0 25 50 75 100 125 150
Starting T J , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
tp V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
QG
50K
VG
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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+
D.U.T.
-
-12 V
-12V 12V
.2F .3F
QGS
QGD
VDS
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IRHNJ597Z30
Pre-Irradiation
Footnotes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature. A VDD = - 25V, starting TJ = 25C, L=0.63 mH Peak IL = - 22A, VGS = -12V A ISD - 22A, di/dt -205A/s, VDD - 30V, TJ 150C
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. -24 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- SMD-0.5
PAD ASSIGNMENTS 1 = DRAIN 2 = GATE 3 = SOURCE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 01/2005
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