View FMBM5551_1240906.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FMBM5551 NPN General Purpose Amplifier
April 2005
FMBM5551
NPN General Purpose Amplifier
* This device has matched dies * Sourced from process 16. * See MMBT5551 for characteristics
C2 E1 C1
B2 E2 pin #1 B1
Mark: .3S2 Dot denotes pin #1
SuperSOTTM-6
Absolute Maximum Ratings *
Symbol
VCEO VCBO VEBO IC PC TJ TSTG TJA
Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Collector Dissipation (TC = 25C) Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient
Value
160 180 6 600 0.7 150 -55 ~ 150 180
Units
V V V mA W C C C/W
* Pd total, for both transistors. For each transistor, Pd = 350mW
Electrical Characteristics
Symbol
Off Characteristics BVCEO BVCBO BVEBO ICBO IEBO hFE1 DIVID1 hFE2 DIVID2 Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain
TC = 25C unless otherwise noted
Parameter
Conditions
IC = 1mA, IB = 0 IC = 100A, IE = 0 IC = 10A, IC = 0 VCB = 120V VCB = 120V, Ta = 100C VEB = 4V VCE = 5V, IC = 1mA hFE1(Die1)/hFE1(Die2) VCE = 5V, IC = 10mA hFE2(Die1)/hFE2(Die2)
Min.
160 180 6
Max
Units
V V V
50 50 50 80 0.9 80 0.95 1.1 250 1.05
nA A nA
On Characteristics Variation Ratio of hFE1 Between Die 1 and Die 2 DC Current Gain Variation Ratio of hFE2 Between Die 1 and Die 2
(c)2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FMBM5551 Rev. D
FMBM5551 NPN General Purpose Amplifier
Electrical Characteristics (Continued)
Symbol
hFE3 DIVID3 VCE(sat) VBE(sat) VBE(on) DEL Cob Cib fT NF hfe DC Current Gain
TC = 25C unless otherwise noted
Parameter
Variation Ratio of hFE3 Between Die 1 and Die 2 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Difference of VBE(on) Between Die1 and Die 2 Output Capacitance Input Capacitance Current Gain Bandwidth Product Noise Figure Small Signal Current Gain
Conditions
VCE = 5V, IC = 50mA hFE3(Die1)/hFE3(Die2) IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA VCE = 5V, IC = 10mA VBE(on)(Die1)-VBE(on)(Die2) VCB = 10V, f = 1MHz VCB = 0.5V, f = 1MHz VCE = 10V, IC = 10mA, f = 100MHz VCE = 5V, IC = 200A, f = 1MHz, RS = 20K, B = 200Hz VCE = 10V, IC = 1.0mA, f = 1.0KHz
Min.
30 0.9
Max
1.1 0.15 0.2 1 1 1
Units
V V V V V mV pF pF MHz dB
-8
8 6 20
Small Signal Characteristics
100
300 8
50
250
FMBM5551 Rev. D
2
www.fairchildsemi.com
FMBM5551 NPN General Purpose Amplifier
Mechanical Dimensions
SuperSOTTM-6
Dimensions in Millimeters
FMBM5551 Rev. D
3
www.fairchildsemi.com
FMBM5551 NPN General Purpose Amplifier
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM
ActiveArrayTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM
Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM
IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM
POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM
SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I15
4 FMBM5551 Rev. D
www.fairchildsemi.com

▲Up To Search▲

Price & Availability of FMBM5551

	To Download FMBM5551 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .