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FJP3835
FJP3835
Power Amplifier
* High Current Capability : IC=8A * High Power Dissipation * Wide S.O.A
1
TO-220 2.Collector 3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol
VCBO VCEO VEBO IC ICP PC TJ TSTG
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature
Value 200 120 8 8 16 50 150 - 55 ~ 150
Units V V V A A W C C
Electrical Characteristics TC=25C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob tON tF tSTG
* Pulse Test : PW=20s
Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current
* DC
Test Condition IC=5mA, IE=0 IC=10mA, RBE= IE=5mA, IC=0 VCB=80V, IE=0 VEB=4V, IC=0 VCE=4V, IC=3A IC=3A, IB=0.3A IC=3A, IB=0.3A VCE=5V, IC=1A VCB=10V, f=1MHz VCC=20V, IC=1A=10IB1=-10IB2 RL=20
Min. 200 120 8
Typ.
Max.
Units V V V
0.1 0.1 120 250 0.5 1.2 30 210 0.26 0.68 6.68
mA mA V V MHz pF s s s
Current Gain
Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Turn On Time Fall Time Storage Time
(c)2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
FJP3835
Typical Characteristics
7
1000
IB = 35mA
6
VCE = 4V
IC [A], COLLECTOR CURRENT
hFE, DC CURRENT GAIN
5
TC = 125 C
o
TC = 75 C
o
4
100
3
TC = - 25 C
o
TC = 25 C
o
IB = 10mA
2
IB = 5mA
1
0 0 2 4 6 8
10
0.01 0.1 1 10
VCE [V], COLLECTOR-EMITTER VOLTAGE
IC [A], COLLECTOR CURRENT
Figure 1. Static Characterstic
Figure 2. DC current Gain
1
10
VCE(sat) [V], SATURATION VOLTAGE
IC = 10 IB
IC = 10 IB
0.1
TC = - 25 C TC = 25 C TC = 75 C
0.01
o o
o
VBE(sat), SATURATION VOLTAGE
1
TC = - 25 C TC = 75 C TC = 125 C
o o
o
TC = 25 C
o
TC = 125 C
o
1E-3 0.01
0.1
1
10
0.1 0.01
0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
100
100
IC[A], COLLECTOR CURRENT
10
IC MAX. (DC) 10ms
1
PC[W], POWER DISSIPATION
IC MAX. (Pulse)
100ms
80
60
40
0.1
20
Single Pulse o TC=25[ C]
0.01 0.1 1 10 100
0 0 25 50
o
75
100
125
150
175
VCE[V], COLLECTOR-EMITTER VOLTAGE
TC[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
(c)2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
FJP3835
Package Demensions
TO-220
9.90 0.20
1.30 0.10 2.80 0.10
4.50 0.20
(8.70) o3.60 0.10
(1.70)
1.30 -0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20
Dimensions in Millimeters
(c)2003 Fairchild Semiconductor Corporation Rev. A, December 2003
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FACT Quiet SeriesTM ActiveArrayTM FAST BottomlessTM FASTrTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM TM EnSigna ImpliedDisconnectTM FACTTM ISOPLANARTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM
DISCLAIMER
LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC OPTOPLANARTM PACMANTM POPTM
Power247TM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM
SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I6

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