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| FJN965 FJN965 For Output Amplifier of Electronic Flash Unit * Low Collector-Emitter Saturation Voltage * High Performance at Low Supply Voltage 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Ratings 40 20 7 5 0.75 150 -55 ~ 150 Units V V V A W C C Electrical Characteristics TC=25C unless otherwise noted Symbol BVCEO BVEBO ICBO ICEO IEBO hFE1 hFE2 VCE (sat) fT Cob Parameter Collector-Emitter Voltage Emitter Base Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Band Width Product Collector Output Capacitance Test Condition IC=1mA, IB=0 IC=100A, IC=0 VCB=10V, IE=0 VCE=10V, IB=0 VEB=7V, IC=0 VCE=2V, IC=0.5A VCE=2V, IC=2A IC=3A, IB=0.1A VCE=6V, IC=50mA VCB=20V, IE=0, f=1MHz 150 23 230 150 Min. 20 7 0.1 1 0.1 600 1 V MHz pF Typ. Max. Units V V A A A (c)2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 FJN965 Typical Characteristics 14 1.8 IB=200mA 12 1.6 VCE=2V IC[mA], COLLECTOR CURRENT 10 IC[A], COLLECTOR CURRENT 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 8 Ta=125 C o 25 C o -40 C o 6 4 IB=20mA 2 0 0 2 4 6 8 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VCE[V], COLLECTOR-EMITTER VOLTAGE VBE[V], BASE-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. Base-Emitter On Voltage 1000 10 VCE=2V Ta=125 C Ta=25 C o IC=30IB VCE(sat)[V], SATURATION VOLTAGE o hFE, DC CURRENT GAIN Ta=-40 C o 1 100 0.1 Ta=125 C 0.01 o Ta=25 C Ta=-40 C o o 10 0.01 0.1 1 10 100 1E-3 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Collector-Emitter Saturation Voltage 10 100 VBE(sat)[V], SATURATION VOLTAGE IC=30IB IE=0,f=1MHZ Cob[pF], OUTPUT CAPACITANCE 1 10 80 60 1 Ta=-40 C Ta=25 C Ta=125 C 0 0 0 40 20 0.1 0.01 0 0.1 1 10 100 IC[A], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Base-Emitter On Voltage Figure 6. Collector Output Capacitance (c)2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 FJN965 Typical Characteristics (Continued) 1.0 100 SP ingle ulse o T =25 C a 0.8 10 ICP t =10m s IC t =1s PC [W PO ERDISSIPATIO ], W N 0.6 IC [A C LLE T RC R E T ], O C O U R N 0 25 o 1 0.4 0.1 0.2 0.0 50 75 100 125 150 0.01 0.1 1 10 100 Ta [ C], AM TTEM ATU BIEN PER RE V E [V S T R T NV LT G ], A U A IO O A E C Figure 7. Power Derating Figure 8. Forward Bias Safe Operating Area (c)2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 FJN965 (c)2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 FJN965 Package Dimensions TO-92 4.58 -0.15 +0.25 0.46 14.47 0.40 0.10 4.58 0.20 1.27TYP [1.27 0.20] 3.60 0.20 1.27TYP [1.27 0.20] 0.38 -0.05 +0.10 3.86MAX 1.02 0.10 0.38 -0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2002 Fairchild Semiconductor Corporation Rev. I1 |
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