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Ordering number : ENN7170
CPH5508
NPN Epitaxial Planar Silicon Transistor
CPH5508
High-Current Switching Applications
Applications
*
Package Dimensions
unit : mm 2162
[CPH5508]
2.9 5 4 3
Inverters, Relay drivers, Lamp drivers, Motor drivers, Strobes.
0.6
*
*
*
Composite type with 2 NPN transistors in one package facilitating high-density mounting. The CPH5508 is composed of 2 CPH3216 equivaient chips . Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm).
1 0.95
2 0.4
0.6
1.6
2.8
0.05
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC PT Tj Tstg Conditions
1 : Collector(TR1) 2 : Collector(TR2) 3 : Base(TR2) 4 : Emitter Common 5 : Base(TR1) SANYO : CPH5
Ratings 100 100 50 5 1 3 200 Unit V V V V A A mA W W C C
0.2
0.4
Mounted on a ceramic board (600mm2!0.8mm) 1unit Mounted on a ceramic board (600mm2!0.8mm)
0.7
0.9
0.2
0.9 1.2 150 --55 to +150
Features
0.15
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob Conditions VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=100mA VCE=10V, IC=300mA VCB=10V, f=1MHz Ratings min typ max 0.1 0.1 200 420 6 560 MHz pF Unit A A
Note : The specifications shown above are for each individual transistor. Marking : EH
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11502 TS IM TA-3493 No.7170-1/4
CPH5508
Continued from preceding page.
Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol VCE(sat) VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=500mA, IB=10mA IC=500mA, IB=10mA IC=10A, IE=0 IC=100A, RBE=0 IC=1mA, RBE= IE=10A, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 100 100 50 6 35 330 40 Ratings min typ 130 0.81 max 190 1.2 Unit mV V V V V V ns ns ns
Switching Time Test Circuit
PW=20s D.C.1% INPUT IB1 OUTPUT IB2 VR 50 + 100F VBE= --5V + 470F VCC=25V RB
Electrical Connection
B1 EC B2
RL
C1
C2
IC=20IB1= --20IB2=500mA
1000
IC -- VCE
40mA 30mA
10mA
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3
IC -- VBE
VCE=2V
Collector Current, IC -- mA
20m
50mA
6mA
4mA
600
400
2mA
Collector Current, IC -- A
800
A
8mA
0.1 0 0 0.2 0.4 0.6 0.8
IB=0
1.0 IT01644
0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT01646
Collector-to-Emitter Voltage, VCE -- V
1000 7 5
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
5 3
f T -- IC
Ta=7 5
200
0.2
C 25C --25C
VCE=2V Gain-Bandwidth Product, f T -- MHz Ta=75C
--25C
VCE=10V
2 1000 7 5 3 2 100 7 5 3
DC Current Gain, hFE
3 2
25C
100 7 5 3 2
10 0.01
2
3
5
7
0.1
2
3
5
7
1.0
2
3
2 0.01
2
3
5
7
0.1
2
3
5
7
1.0
2
3
Collector Current, IC -- A
IT01648
Collector Current, IC -- A
IT01650
No.7170-2/4
CPH5508
100 7 5 3 2
Cob -- VCB
f=1MHz
1.0 7
VCE(sat) -- IC
IC / IB=20
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
Output Capacitance, Cob -- pF
5 3 2
0.1 7 5 3 2
10 7 5 3 2 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT01652
75C Ta= C --25
2 3 5 7 0.1
25
C
0.01 0.01
2
3
5
Collector-to-Base Voltage, VCB -- V
1.0 7
VCE(sat) -- IC
Collector Current, IC -- A
10 7
7 1.0 IT01654
VBE(sat) -- IC
IC / IB=50
IC / IB=50
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
5 3 2
5 3 2
0.1 7 5 3 2
1.0 7 5 3 2
Ta=
--25C
75C
25 C
Ta= --25C
75C
25C
0.01 0.01
2
3
5
7
0.1
2
3
5
Collector Current, IC -- A
5 3 2
1.0 IT01656
7
0.1 0.01
2
3
5
7
0.1
2
3
5
ASO
Collector Current, IC -- A
1.4
7 1.0 IT01658
PC -- Ta
ICP=3A
10s
10
s
10 ms
Collector Current, IC -- A
1.0 7 5 3 2 0.1 7 5 3 2 0.01
IC=1A
Collector Dissipation, PC -- W
1m
1.2
50
s s 00 s5 0
1.0 0.9 0.8
DC
op
10
er
0m
To t
ati
s
al
di
ss
on
ip
0.6
1u
nit
ati
on
0.4
Ta=25C Single pulse Mounted on a ceramic board (600mm2!0.8mm) 1unit
2 3 5 7 1.0 2 3 5 7 10 2 3 57 IT04223
0.2 0 0
Mounted on a ceramic board (600mm2!0.8mm)
20 40 60 80 100 120 140 160
0.1
Collector-to-Emitter Voltage, VCE -- V
1.0
Ambient Temperature, Ta -- C
IT02364
PC(TR2) -- PC(TR1)
Collector Dissipation, PC(TR2) -- W
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0
Mounted on a ceramic board (600mm2!0.8mm)
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector Dissipation, PC(TR1) -- W
IT02365
No.7170-3/4
CPH5508
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2002. Specifications and information herein are subject to change without notice.
PS No.7170-4/4

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