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  Datasheet File OCR Text:
 CMPT5086 CMPT5087
PNP SILICON TRANSISTOR
Central
DESCRIPTION:
TM
Semiconductor Corp.
SOT-23 CASE MAXIMUM RATINGS (TA=25oC) SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg JA
The CENTRAL SEMICONDUCTOR CMPT5086, CMPT5087 types are PNP silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high gain and low noise. Marking Codes are C2P and C2Q Respectively.
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
50 50 3.0 50 350 -65 to +150 357
UNITS V V V mA mW
oC oC/W
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) CMPT5086 MIN MAX 10 50 50 50 3.0 0.30 0.85 150 500 150 150 40 4.0 150 600 CMPT5087 MIN MAX 10 50 50 50 3.0 0.30 0.85 250 800 250 250 40 4.0 250 900
SYMBOL ICBO ICBO BVCBO BVCEO BVEBO VCE(SAT) VBE(SAT) hFE hFE hFE fT Cob hfe
TEST CONDITIONS VCB=10V VCB=35V IC=100A IC=1.0mA IE=100A IC=10mA, IB=1.0mA IC=10mA, IB=1.0mA VCE=5.0V, IC=0.1mA VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=500A, f=20MHz VCB=5.0V, IE=0, f=1.0MHz VCE=5.0V, IC=1.0mA, f=1.0kHz
UNITS nA nA V V V V V
MHz pF
178
SYMBOL NF NF
TEST CONDITIONS VCE=5.0V, IC=20mA, RS=10k f=10Hz to 15.7kHz VCE=5.0V, IC=100A, RS=3.0k, f=1.0kHz
CMPT5086 MIN MAX 3.0 3.0
CMPT5087 MIN MAX 2.0 2.0
UNITS dB dB
All dimensions in inches (mm).
LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR
R2
179


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