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| BSP 300 SIPMOS (R) Small-Signal Transistor * N channel * Enhancement mode * Avalanche rated * VGS(th)= 2.0... 4.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type VDS 800 V ID 0.19 A RDS(on) 20 Package Marking BSP 300 Type BSP 300 BSP 300 SOT-223 BSP 300 Ordering Code Q67050 -T0009 Q67050-T0017 Tape and Reel Information E6433 E6327 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TA = 25 C ID A 0.19 DC drain current, pulsed TA = 25 C IDpuls 0.76 E AS Avalanche energy, single pulse ID = 0.8 A, VDD = 50 V, RGS = 25 L = 105 mH, Tj = 25 C mJ 36 V GS P tot Gate source voltage Power dissipation TA = 25 C 20 1.8 V W Semiconductor Group 1 02/12/1996 BSP 300 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) Thermal resistance, junction-soldering point 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJA RthJS -55 ... + 150 -55 ... + 150 C 70 14 E 55 / 150 / 56 K/W 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 C V (BR)DSS V 800 - Gate threshold voltage V GS=V DS, ID = 1 mA V GS(th) 2 IDSS 3 4 A Zero gate voltage drain current V DS = 800 V, V GS = 0 V, Tj = 25 C V DS = 800 V, V GS = 0 V, Tj = 125 C IGSS 0.1 10 1 100 nA Gate-source leakage current V GS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-state resistance V GS = 10 V, ID = 0.19 A 15 20 Semiconductor Group 2 02/12/1996 BSP 300 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance V DS 2 * ID * RDS(on)max, ID = 0.19 A gfs S 0.06 0.27 pF 170 230 Input capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 20 30 Reverse transfer capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz td(on) 10 15 ns Turn-on delay time V DD = 30 V, VGS = 10 V, ID = 0.25 A RGS = 50 tr 7 11 Rise time V DD = 30 V, VGS = 10 V, ID = 0.25 A RGS = 50 td(off) 16 24 Turn-off delay time V DD = 30 V, VGS = 10 V, ID = 0.25 A RGS = 50 tf 27 36 Fall time V DD = 30 V, VGS = 10 V, ID = 0.25 A RGS = 50 - 21 28 Semiconductor Group 3 02/12/1996 BSP 300 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TA = 25 C IS A 0.19 Inverse diode direct current,pulsed TA = 25 C ISM V SD - 0.76 V Inverse diode forward voltage V GS = 0 V, IF = 0.38 A, Tj = 25 C trr 1 1.4 ns Reverse recovery time V R = 30 V, IF=lS = 0 , diF/dt = 100 A/s Qrr 95 C Reverse recovery charge V R = 30 V, IF=lS = 0 , diF/dt = 100 A/s - 0.25 - Semiconductor Group 4 02/12/1996 BSP 300 Power dissipation Ptot = (TA) Drain current ID = (TA) parameter: VGS 10 V 0.20 A ID 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 2.0 W Ptot 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 C 160 TA TA Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C 10 0 D Transient thermal impedance Zth JA = (tp ) parameter: D = tp / T t = 760.0s p 1 ms 10 2 K/W 10 1 DS (on ) ID 10 -1 =V DS A /I 10 ms ZthJC 10 0 R 10 -1 D = 0.50 0.20 10 -2 10 -3 single pulse 10 -4 DC 10 -3 0 10 1 2 3 10 -2 0.10 0.05 0.02 0.01 10 10 V 10 10 -5 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 VDS tp Semiconductor Group 5 02/12/1996 BSP 300 Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C 0.45 A ID 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 4 8 12 16 V 24 a l Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 65 Ptot = 2W kg e h ji f d VGS [V] a b c 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 55 RDS (on) 50 45 40 35 30 25 20 15 10 5 0 VGS [V] = a 4.0 4.5 b 5.0 a b c d e f g h i j c bk l k d e gh f i j c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 A 0.34 VDS ID Typ. transfer characteristics ID = f(VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS 2 x ID x RDS(on)max 1.0 A I parameter: tp = 80 s, V DS2 x ID x RDS(on)max 0.50 S g 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 1 2 3 4 5 6 7 8 V VGS 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 D fs 10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 A ID 0.8 Semiconductor Group 6 02/12/1996 BSP 300 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 0.19 A, VGS = 10 V 50 Gate threshold voltage VGS (th) = (Tj ) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 98% RDS (on) 40 35 30 25 20 15 98% VGS(th) 3.6 3.2 2.8 2.4 2% 2.0 typ typ 1.6 1.2 10 5 0 -60 -20 20 60 100 C 160 0.8 0.4 0.0 -60 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 0 pF C Ciss A IF 10 -1 10 2 Coss 10 1 10 -2 Crss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 5 10 15 20 25 30 V VDS 40 10 -3 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 02/12/1996 BSP 300 Avalanche energy EAS = (Tj) parameter: ID = 0.8 A, VDD = 50 V RGS = 25 , L = 105 mH 38 mJ 32 EAS 28 24 Drain-source breakdown voltage V(BR)DSS = (Tj) 960 V 920 V(BR)DSS 900 880 860 20 16 12 8 840 820 800 780 760 4 0 20 40 60 80 100 120 C 160 740 720 -60 -20 20 60 100 C 160 Tj Tj Semiconductor Group 8 02/12/1996 |
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