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| Rev. 1.0 BSP296 SIPMOS Small-Signal-Transistor Feature * N-Channel * Enhancement mode * Logic Level * dv/dt rated Product Summary VDS 100 0.7 1.1 SOT-223 4 V A RDS(on) ID 3 2 1 VPS05163 Type BSP296 Package SOT-223 Ordering Code Q67000-S067 Tape and Reel Information E6327 Marking BSP296 Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous drain current TA=25C TA=70C Symbol ID Value 1.1 0.88 Unit A Pulsed drain current TA=25C I D puls dv/dt VGS Ptot 4.4 6 20 Class 1 1.79 -55... +150 55/150/56 W C kV/s V Reverse diode dv/dt IS=1.1A, VDS=80V, di/dt=200A/s, Tjmax=150C Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Power dissipation TA=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 T j , Tstg Page 1 2002-12-10 Rev. 1.0 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) BSP296 Symbol min. RthJS RthJA - Values typ. max. 25 Unit K/W - 115 70 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS=0, ID =250A Symbol min. V(BR)DSS Values typ. 1.4 max. 1.8 Unit 100 0.8 V Gate threshold voltage, VGS = VDS ID=400A VGS(th) I DSS Zero gate voltage drain current VDS=100V, VGS=0, Tj=25C VDS=100V, VGS=0, Tj=150C A 10 0.62 0.43 0.1 50 100 1 0.7 nA Gate-source leakage current VGS=20V, VDS=0 I GSS RDS(on) RDS(on) - Drain-source on-state resistance VGS=4.5V, ID=0.95A Drain-source on-state resistance VGS=10V, ID=1.1A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2002-12-10 Rev. 1.0 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time gfs Ciss Coss Crss td(on) tr td(off) tf VDD=50V, VGS=10V, ID=1.1A, RG=6 VDS2*ID*RDS(on)max, ID=0.88A VGS=0, VDS=25V, f=1MHz BSP296 Symbol Conditions min. 0.6 - Values typ. 1.2 291 53 29 5.2 7.9 37.4 21.4 max. 364 66 36 7.8 11.8 56.1 32.1 Unit S pF ns Gate Charge Characteristics Gate to source charge Gate to drain charge Q gs Q gd VDD =80V, ID =1.1A - 0.7 5 13.8 2.7 0.9 7.5 17.2 - nC Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Qg VDD =80V, ID =1.1A, VGS =0 to 10V V(plateau) VDD =80V, ID = 1.1 A V IS TA=25C - 0.82 44.3 71.9 1.1 4.4 1.2 55.4 89.8 A Inv. diode direct current, pulsed ISM Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS=0, IF = IS VR=50V, I F=lS , diF/dt=100A/s - V ns nC Page 3 2002-12-10 Rev. 1.0 1 Power dissipation Ptot = f (TA) 1.9 BSP296 BSP296 2 Drain current ID = f (TA) parameter: VGS 10 V 1.3 BSP296 W 1.6 1.4 A 1.1 1 P tot 0.9 ID 20 40 60 80 100 120 1.2 1 0.8 0.8 0.7 0.6 0.5 0.6 0.4 0.2 0 0 0.4 0.3 0.2 0.1 C 160 0 0 20 40 60 80 100 120 C 160 TA TA 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25 C 10 1 BSP296 tp = 120.0s 4 Transient thermal impedance ZthJA = f (tp ) parameter : D = tp /T 10 2 BSP296 K/W A DS = V /I 10 1 D 10 DS (o n 0 Z thJA ) 1 ms 10 0 ID R 10 ms 10 -1 D = 0.50 0.20 10 -1 10 -2 0.10 0.05 0.02 10 -3 DC 10 -2 single pulse 0.01 10 0 10 1 10 2 V 10 3 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2002-12-10 Rev. 1.0 5 Typ. output characteristic ID = f (VDS) parameter: Tj = 25 C, VGS 2 BSP296 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: Tj = 25 C, VGS 2 2.1V 2.5V 2.7V 3.1V A R DS(on) 3.7V 3.9V 4.1V 1.6 4.3V 4.5V 1.4 10V 1.2 1 0.8 0.6 0.4 0.2 0 0 3.1V 1.4 2.7V 1.1 3.7V 3.9V 4.5V 5V 6V 10V ID 2.5V 0.8 2.1V 0.5 0.5 1 1.5 2 V 3 0.2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 A 2 VDS ID 7 Typ. transfer characteristics ID = f ( VGS ); VDS 2 x ID x RDS(on)max parameter: Tj = 25 C 2 8 Typ. forward transconductance gfs = f(ID) parameter: Tj = 25 C 2 A S 1.2 gfs 2.4 2.8 3.2 V ID 1.2 0.8 0.8 0.4 0.4 0 0 0.4 0.8 1.2 1.6 2 4 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 A 2 VGS Page 5 ID 2002-12-10 Rev. 1.0 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 1.1 A, VGS = 10 V BSP296 BSP296 10 Typ. gate threshold voltage VGS(th) = f (Tj ) parameter: VGS = VDS ; ID =400A 2.4 2.8 V 2 2.4 2.2 R DS(on) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -60 -20 20 60 100 C V GS(th) 1.8 1.6 1.4 1.2 1 98% typ. 98% 0.8 0.6 2% typ 0.4 0.2 180 0 -60 -20 20 60 100 Tj C Tj 160 11 Typ. capacitances C = f (VDS) parameter: VGS =0, f=1 MHz, Tj = 25 C 10 3 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj 10 1 BSP296 A pF C iss 10 0 C 10 2 Coss 10 -1 IF Crss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 1 0 5 10 15 20 V 30 10 -2 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS Page 6 VSD 2002-12-10 Rev. 1.0 13 Typ. gate charge VGS = f (QG ); parameter: VDS , BSP296 14 Drain-source breakdown voltage V(BR)DSS = f (Tj) BSP296 ID = 1.1 A pulsed, Tj = 25 C 16 V BSP296 120 V 12 V (BR)DSS 0.5 VDS max 114 112 110 108 106 104 102 100 98 96 V GS 10 8 0.2 VDS max 6 0.8 V DS max 4 2 94 92 0 0 2 4 6 8 10 12 14 16 18 nC 21 90 -60 -20 20 60 100 C 180 QG Tj Page 7 2002-12-10 Rev. 1.0 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. BSP296 Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2002-12-10 |
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