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APTGT400U170D4G
Single switch Trench + Field Stop IGBT(R) Power Module
1
VCES = 1700V IC = 400A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Low stray inductance * High level of integration * Kelvin emitter for easy drive * Low stray inductance - M6 connectors for power - M4 connectors for signal Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant
3 5 2
2 4 5
1
3
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C
Reverse Bias Safe Operation Area
800A@1650V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-5
APTGT400U170D4G - Rev 1
Max ratings 1700 800 400 800 20 2080
Unit V A V W
March, 2006
APTGT400U170D4G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Test Conditions Min Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current VGE = 0V, VCE = 1700V Tj = 25C VGE = 15V IC = 400A Tj = 125C VGE = VCE , IC = 16 mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 900V IC = 400A R G = 3.6 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 400A R G = 3.6 VGE = 15V Tj = 125C VBus = 900V IC = 400A Tj = 125C R G = 3.6 Typ 2.0 2.4 5.8 Max 1 2.4 6.4 400 Unit mA V V nA
5.2
Dynamic Characteristics
Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn On Energy Turn Off Energy
Min
Typ 33 1.2 250 100 850 120 300 100 1000 200 150 125
Max
Unit nF
ns
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Er trr Qrr Maximum Reverse Leakage Current DC forward current Diode Forward Voltage Reverse Recovery Energy Reverse Recovery Time Reverse Recovery Charge
Test Conditions VR=1700V IF = 400A VGE = 0V IF = 400A VR = 900V
di/dt =4200A/s
Min 1700 Tj = 25C Tj = 125C Tc=80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Typ
Max 750 1000
Unit V A A
APT website - http://www.advancedpower.com
2-5
APTGT400U170D4G - Rev 1
March, 2006
400 1.8 1.9 50 100 420 525 100 170
2.2
V mJ ns C
APTGT400U170D4G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight M6 M4 IGBT Diode 3500 -40 -40 -40 3 1 Min Typ Max 0.06 0.09 150 125 125 5 2 420 Unit
C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V C N.m g
D4 Package outline (dimensions in mm)
APT website - http://www.advancedpower.com
3-5
APTGT400U170D4G - Rev 1
March, 2006
APTGT400U170D4G
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 800 700 600
TJ =125C
800 700 600
IC (A) IC (A)
T J=25C
T J = 125C
VGE=20V
500 400 300 200 100 0 0 0.5 1 1.5 2 2.5 V CE (V) 3 3.5 4
500 400 300 200 100 0 0 1 2 3 VCE (V) 4 5
VGE =13V VGE =15V V GE=9V
800 700 600
Transfert Characteristics 500
T J=25C
Energy losses vs Collector Current
VCE = 900V VGE = 15V RG = 3.6 T J = 125C
400 E (mJ) 300 200 100 0 5 6 7 8 VGE (V) 9 10 11 0
Eon
500 IC (A) 400 300 200 100 0
TJ=125C T J=125C
Eoff
Er
100 200 300 400 500 600 700 800 IC (A) Reverse Bias Safe Operating Area
Switching Energy Losses vs Gate Resistance 500 400 E (mJ) 300 200 100
Er VCE = 900V VGE =15V IC = 400A TJ = 125C
1000
Eon
800 IC (A) 600 400 200 0 25 0 400 800 1200 1600 2000 VCE (V)
VGE =15V TJ =125C RG=3.6
Eoff
0 0 5 10 15 20 Gate Resistance (ohms)
0.07 Thermal Impedance (C/W) 0.06 0.05 0.04 0.03 0.02 0.01 0 0.00001 0.5 0.3 0.1 0.05 0.9 0.7
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
IGBT
Single Pulse 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
APT website - http://www.advancedpower.com
4-5
APTGT400U170D4G - Rev 1
March, 2006
APTGT400U170D4G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 25 20 15 10 5 0 0 100 200 300 IC (A) 400 500 600
ZCS ZVS VCE=900V D=50% RG =3.6 TJ=125C TC=75C
Forward Characteristic of diode 800 700 600 500 IF (A) 400 300 200
TJ =125C T J=125C T J=25C
hard switching
100 0 0 0.5 1 1.5 V F (V) 2 2.5 3
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.1 Thermal Impedance (C/W) 0.08 0.06 0.5 0.04 0.02 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.9 0.7
Diode
0 0.00001
rectangular Pulse Duration (Seconds)
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
5-5
APTGT400U170D4G - Rev 1
APT reserves the right to change, without notice, the specifications and information contained herein
March, 2006

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