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| SRFET TM AO4708 N-Channel Enhancement Mode Field Effect Transistor TM General Description SRFET AO4708 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AO4708 is Pb-free (meets ROHS & Sony 259 specifications). AO4708L is a Green Product ordering option. AO4708L and AO4708 are electrically identical. D S S S G D D D D Features VDS (V) = 30V ID =15A (VGS = 10V) RDS(ON) < 8.7m (VGS = 10V) RDS(ON) < 10.5m (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested G S SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B Avalanche Current B B Maximum 30 12 15 12 80 25 94 3.1 2.0 -55 to 150 Units V V A A A mJ W C TA=25C TA=70C IDSM IDM IAR EAR PDSM TJ, TSTG TA=25C Repetitive avalanche energy L=0.3mH Power Dissipation A TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C Symbol A A t 10s Steady-State Steady-State RJA RJL Typ 32 60 17 Max 40 75 24 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO4708 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250uA, VGS=0V VDS=24V, VGS=0V TJ=125C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=15A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=14A Forward Transconductance VDS=5V, ID=15A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current TJ=125C 1.4 80 7.2 10.5 8.6 85 0.39 0.5 5.5 2800 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 390 145 0.8 42 VGS=10V, VDS=15V, ID=15A 19 7 6 7 VGS=10V, VDS=15V, RL=1, RGEN=3 IF=15A, dI/dt=300A/s 7 31 5 13 12 15 1.5 52 3360 8.7 13.1 10.5 1.8 Min 30 0.1 20 0.1 2.4 Typ Max Units V mA A V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=15A, dI/dt=300A/s A: The value of RJA is measured with the device in a still air environment with T A =25C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150C, using t 10s junction-to-ambient thermal resistance. B: Repetitive rating, pulse width limited by junction temperature T J(MAX)=150C. C. The RJA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev0: Sept. 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES Ltd. Alpha & Omega Semiconductor, OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. AO4708 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 100 80 ID (A) 60 40 20 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 12 Normalized On-Resistance 11 10 RDS(ON) (m) 9 8 7 6 5 4 0 10 20 30 40 50 60 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 16 14 125C RDS(ON) (m) 12 10 8 6 4 2 3 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics IS (A) ID=15A 1.0E+02 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 125C 25C VGS=10V VGS=4.5V 1.8 1.6 1.4 1.2 1 0.8 0 30 60 90 120 150 180 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V ID=14A ID=15A VGS=10V VGS=3V ID(A) 3.5V 6V 8V 10V 4.5V 20 125 15 10 5 0 1 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 25C 30 4V 25 VDS=5V Alpha & Omega Semiconductor, Ltd. AO4708 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 Capacitance (pF) VGS (Volts) 6 4 2 0 0 10 20 30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=15V ID=15A 4500 4000 3500 3000 2500 2000 1500 1000 500 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Crss Coss Ciss 100.0 10s 10.0 ID (Amps) RDS(ON) limited 100s Power (W) 1ms 1.0 10ms 10s DC 0.1 TJ(Max)=150C TA=25C 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 0.1s 1s 100 90 80 70 60 50 40 30 20 10 0 0.0001 0.001 0.01 0.1 1 10 100 TJ(Max)=150C TA=25C 0.0 Pulse Width (s) Figure10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=75C/W 0.001 0.01 0.1 1 PD Ton T 100 1000 0.01 Single Pulse 0.001 0.00001 0.0001 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. AO4708 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01 1.0E-02 VDS=24V 1.0E-03 IR (A) VSD(V) 1.0E-04 1.0E-05 1.0E-06 100 150 200 Temperature (C) Figure 12: Diode Reverse Leakage Current vs. Junction Temperature 50 45 40 35 Qrr (nC) 30 25 20 15 10 5 0 0 5 10 15 20 25 30 Is (A) Figure 14: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 50 Is=20A 125C Qrr (nC) 15 18 16 14 125C 25C 1.5 trr S 1.0 0.5 0.0 1200 S 10 25C 8 3 6 4 0 200 400 600 800 1000 125C di/dt (A) Figure 17: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt Is=20A 2.0 Irm 25C 0 4 Qrr 125C 8 di/dt=1000A/us 125C 25C 20 16 12 12 11 10 Irm (A) trr (ns) 9 8 7 6 5 4 0 5 10 15 20 25 30 Is (A) Figure 15: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current S 125C trr 25C 25C 0 50 VDS=12V 0.6 0.4 0.2 0 0 100 150 200 Temperature (C) Figure 13: Diode Forward voltage vs. Junction Temperature 2.4 2.1 1.8 1.5 1.2 0.9 0.6 0.3 0.0 50 IS=1A 1 0.8 30A 20A 10A 5A di/dt=1000A/us 125C 2.5 40 12 Irm (A) 20 Qrr Irm 0 125C 25C 6 10 0 600 800 1000 1200 di/dt (A) Figure 16: Diode Reverse Recovery Charge and Peak Current vs. di/dt 0 200 400 Alpha & Omega Semiconductor, Ltd. trr (ns) 30 25C 9 12 S |
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