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 ALR175
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI ALR175 is common Base transistor Designed for 1215 - 1400 MHz, L-Band Applications.
PACKAGE STYLE .400 2L FLG (A)
4x .062 x 45 2xB A .040 x 45 C F
E D G
2xR H J K P
FEATURES:
* Internal Input/Output Matching Network * PG = 7.3 dB at 30 W/1400 MHz * OmnigoldTM Metalization System
I L
N M DIM A M IN IM UM
inches / m m
M A XIM UM
inches / m m
.135 / 3.43 .100 / 2.54 .050 / 1.27 .376 / 9.55 .110 / 2.79 .395 / 10.03 .193 / 4.90 .490 / 12.45 .100 / 2.54 .690 / 17.53 .890 / 22.61 .003 / 0.08 .052 / 1.32 .118 / 3.00
.145 / 3.68 .120 / 3.05 .396 / 10.06 .130 / 3.30 .407 / 10.34 .510 / 12.95 .710 / 18.03 .910 / 23.11 .006 / 0.18 .072 / 1.83 .131 / 3.33 .230 / 5.84
MAXIMUM RATINGS
IC VCC PDISS TJ TSTG JC 14 A 45 V 330 W @ TC = 25 C -65 C to +250 C -65 C to +200 C 0.45 C/W
B C D E F G H I J K L M N P
CHARACTERISTICS
SYMBOL
BVCBO BVCES BVEBO ICES hFE PG C POUT IC = 50 mA
TC = 25 C
NONETEST CONDITIONS
IC = 100 mA IE = 10 mA VCE = 40 V VCE = 5.0 V IC = 5.0 A
MINIMUM TYPICAL MAXIMUM
65 65 3.5 25 15 7.3 7.8 50 180 150
UNITS
V V V mA --dB % W
VCC = 40 V
PIN = 30 W
f = 1.215 to 1.4 GHz
45 160
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1


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