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2SA2066
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2066
High-Speed Switching Applications DC-DC Converter Applications
* * * High DC current gain: hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 25 ns (typ.) Unit: mm
Maximum Ratings (Ta = 25C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range t = 10 s DC DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC (Note 1) Tj Tstg Rating -20 -10 -7 -2.0 -3.5 -200 2.0 1.0 150 -55 to 150 Unit V V V A mA W C C
JEDEC JEITA TOSHIBA
SC-62 2-5K1A
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm )
Weight: 0.05 g (typ.)
Electrical Characteristics (Ta = 25C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Rise time Switching time Storage time Fall time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) tr tstg tf Test Condition VCB = -20 V, IE = 0 VEB = -7 V, IC = 0 IC = -10 mA, IB = 0 VCE = -2 V, IC = -0.2 A VCE = -2 V, IC = -0.6 A IC = -0.6 A, IB = -0.02 A IC = -0.6 A, IB = -0.02 A See Figure 1. VCC -6 V, RL = 10 -IB1 = IB2 = -20 mA Min -10 200 125 Typ. 50 115 25 Max -0.1 -0.1 500 -0.19 -1.1 ns V V Unit A A V
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2SA2066
Marking
20 s IB2 IB1 Input IB1 VCC RL Part No. (or abbreviation code)
Output
4
Lot No.
E
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
IB2 Duty cycle < 1%
Figure 1
Switching Time Test Circuit & Timing Chart
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2SA2066
IC - VCE
-2 -80 -1.6 -60 -40 -20 10000
hFE - IC
Common emitter VCE = -2 V Single nonrepetitive pulse Ta = 100C
IC (A)
hFE
-10 -6
1000
-1.2
Collector current
DC current gain
-0.8
100
25
-4 IB = -2 mA
-55
-0.4
0 0
Common emitter Ta = 25C Single nonrepetitive pulse -0.2 -0.4 -0.6 -0.8 -1 -1.2
10 -0.001
-0.01
-0.1
-1
-10
Collector current IC (A)
Collector-emitter voltage
VCE
(V)
VCE (sat) - IC
-1
VBE (sat) - IC
-10
Collector-emitter saturation voltage VCE (sat) (V)
-0.1 Ta = 100C 25 -0.01 -55
Base-emitter saturation voltage VBE (sat) (V)
Common emitter IC/IB = 30 Single nonrepetitive pulse
Common emitter IC/IB = 30 Single nonrepetitive pulse
-55 -1
25
Ta = 100C
-0.001 -0.001
-0.01
-0.1
-1
-10
-0.1 -0.001
-0.01
-0.1
-1
-10
Collector current IC (A)
Collector current IC (A)
IC - VBE
-2 Common emitter VCE = -2 V Single nonrepetitive pulse
IC (A) Collector current
-1.6
-1.2
-0.8
-0.4
Ta = 100C
25
-55
0 0
-0.4
-0.8
-1.2
-1.6
Base-emitter voltage
VBE
(V)
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2SA2066
rth - tw
1000
Transient thermal resistance rth (j-a) (C/W)
100
10 Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25C Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) 1 0.001 0.01 0.1 1 10 100 1000
Pulse width
tw
(s)
Safe Operating Area
-10 IC max (pulsed) 10 ms 1 ms IC max (continuous) 100 s
IC (A)
-1
100 ms* 10 s* DC operation * (Ta = 25C)
Collector current
: Single nonrepetitive pulse Ta = 25C -0.1 Note that the curves for 100 ms*, 10 s* and DC operation* will be different when the devices aren't mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm ). These characteristic curves must be derated linearly with increase in temperature. -0.01 -0.1 -1
-10
VCEO max
-100
Collector-emitter voltage
VCE
(V)
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2SA2066
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
030619EAA
* The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
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2004-07-07

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