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| 2SA1484 Silicon PNP Epitaxial Application Low frequency amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SA1484 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -90 -90 -5 -100 150 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min -90 -90 -5 -- -- 1 Typ -- -- -- -- -- -- -- -- Max -- -- -- -0.1 -0.1 800 -0.15 -1.0 Unit V V V A A Test conditions I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -10 A, IC = 0 VCB = -70 V, IE = 0 VEB = -2 V, IC = 0 VCE = -12 V, IC = -2 mA*2 I C = -10 mA, IB = -1 mA*2 I C = -10 mA, IB = -1 mA*2 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage V(BR)EBO I CBO I EBO hFE* 250 -- -- VCE(sat) VBE(sat) V V Notes: 1. The 2SA1484 is grouped by h FE as follows. 2. Pulse test Grade Mark hFE D IRD 250 to 500 E IRE 400 to 800 2 2SA1484 Maximum Collector Dissipation Curve Collector power dissipation Pc (mW) 150 Collector Current IC (mA) Typical Output Characteristics (1) -20 -3 0 -2 5 -16 100 -12 -20 PC mW 50 =1 -15 -8 50 -10 -4 -5 A IB = 0 0 50 100 150 Ambient Temperature Ta (C) 0 -20 -40 -60 -80 -100 Collector to Emitter Voltage VCE (V) Typical Output Characteristics (2) -10 Collector Current IC (mA) PC = 150 mW -100 Collector Current IC (mA) -18 -16 -14 -12 -10 Typical Transfer Characteristics VCE = -6 V Pulse -10 -8 -20 -6 75 25 -4 -8 -6 -1.0 -2 -4 -2 A IB = 0 Ta = -25C -0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 Base to Emitter Voltage VBE (V) 0 -4 -8 -12 -16 -20 Collector to Emitter Voltage VCE (V) 3 2SA1484 Collector Cutoff Current vs. Collector to Base Voltage -10.000 Collector cutoff current ICBO (pA) Collector cutoff current ICEO (nA) IE = 0 Pulse Ta = 75C -1,000 Collector Cutoff Current vs. Collector to Emitter Voltage RBE = Pulse Ta = 75C 25 -10 -25 -1.0 -1,000 -100 -100 25 -25 -10 -1 0 -20 -40 -60 -80 -100 Collector to Base Voltage VCB (V) -0.1 0 -20 -40 -60 -80 -100 Collector to Emitter Voltage VCE (V) Emitter Cutoff Current vs. Emitter to Base Voltage IC = 0 Pulse -100 Ta = 75C Collector to emitter breakdown voltage V(BR) CER (mA) -1,000 Emitter cutoff current IEBO (pA) Collector to Emitter Breakdown Voltage vs. Base to Emitter Resistance -190 Typical Value IC = -1 mA -180 -170 -10 25 -1.0 -25 -0.1 0 -2 -4 -6 -8 -10 Emitter to Base Voltage VEB (V) -160 -150 -140 10 100 1k 10 k 100 k Base to Emitter Resistance RBE () 4 2SA1484 DC Current Transfer Ratio vs. Collector Current Ta = 75C DC current transfer ratio hFE 300 -25 Collector to emitter saturation voltage VCE (sat) (V) 1,000 Collector to Emitter Saturation Voltage vs. Collector Current -1.0 IC = 10 IB Pulse -0.3 25 100 -0.1 Ta = 75C -25 -0.03 25 30 VCE = -12 V Pulse 10 -1 -3 -10 -30 Collector Current IC (mA) -100 -0.01 -1 -3 -10 -30 Collector Current IC (mA) -100 Base to Emitter Saturation Voltage vs. Collector Current -10 Base to emitter saturation voltage VBE (sat) (V) IC = 10 IB Pulse -3 -1.0 25 Ta = -25C 75 -0.3 -0.1 -1 -3 -10 -30 Collector Current IC (mA) -100 5 Unit: mm 0.65 0.10 3 - 0.4 + 0.05 - 0.16 - 0.06 + 0.10 1.5 0.15 + 0.2 - 0.6 0 - 0.1 0.95 0.95 1.9 0.2 2.95 0.2 0.3 + 0.2 1.1 - 0.1 0.65 2.8 Hitachi Code JEDEC EIAJ Weight (reference value) MPAK -- Conforms 0.011 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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