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  Datasheet File OCR Text:
 2N5401 / MMBT5401
Discrete POWER & Signal Technologies
2N5401
MMBT5401
C
E C BE
TO-92
SOT-23
Mark: 2L
B
PNP General Purpose Amplifier
This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25C unless otherwise noted
Parameter
Value
150 160 5.0 200 -55 to +150
Units
V V V mA C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJC RJA
TA = 25C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N5401 625 5.0 83.3 200
Max
*MMBT5401 350 2.8 357
Units
mW mW/C C/W C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
(c) 1997 Fairchild Semiconductor Corporation
2N5401 / MMBT5401
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current I C = 1.0 mA, IB = 0 I C = 100 A, I E = 0 I E = 10 A, I C = 0 VCB = 120 V, IE = 0 VCB = 120 V, IE = 0, TA = 100C VEB = 3.0 V, IC = 0 150 160 5.0 50 50 50 V V V nA A nA
ON CHARACTERISTICS*
hFE DC Current Gain I C = 1.0 mA, VCE = 5.0 V I C = 10 mA, VCE = 5.0 V I C = 50 mA, VCE = 5.0 V I C = 10 mA, IB = 1.0 mA I C = 50 mA, IB = 5.0 mA I C = 10 mA, IB = 1.0 mA I C = 50 mA, IB = 5.0 mA 50 60 50 240 0.2 0.5 1.0 1.0 V V V V
VCE(sat) VBE(sat)
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
fT Cobo NF Current Gain - Bandwidth Product Output Capacitance Noise Figure I C = 10 mA, VCE = 10 V, f = 100 MHz VCB = 10 V, IE = 0, f = 1.0 MHz I C = 250 A, VCE = 5.0 V, RS = 1.0 k, f = 10 Hz to 15.7 kHz 100 300 6.0 8.0 MHz pF dB
*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
Spice Model
PNP (Is=21.48f Xti=3 Eg=1.11 Vaf=100 Bf=132.1 Ne=1.375 Ise=21.48f Ikf=.1848 Xtb=1.5 Br=3.661 Nc=2 Isc=0 Ikr=0 Rc=1.6 Cjc=17.63p Mjc=.5312 Vjc=.75 Fc=.5 Cje=73.39p Mje=.3777 Vje=.75 Tr=1.476n Tf=641.9p Itf=0 Vtf=0 Xtf=0 Rb=10)
2N5401 / MMBT5401
PNP General Purpose Amplifier
(continued)
Typical Characteristics
vs Collector Current
200
V CESAT- COLLECTOR-EMITTER VOLTAGE (V)
Typical Pulsed Current Gain
- TYPICAL PULSED CURRENT GAIN
Collector-Emitter Saturation Voltage vs Collector Current
0.4 = 10
V CE = 5V
150
125 C 25 C - 40 C
0.3
100
0.2
125 C
25 C
50
0.1
- 40 C
FE
0 0.0001
0.001
0.01
0.1
1
0 0.1
I C - COLLECTOR CURRENT (A)
1 10 I C - COLLECTOR CURRENT (mA)
P 74
100
h
VBE(ON) BASE-EMITTER ON VOLTAGE (V) -
VBESAT- BASE-EMITTER VOLTAGE (V)
Base-Emitter Saturation Voltage vs Collector Current
1
Base-Emitter ON Voltage vs Collector Current
1
0.8
- 40 C 25 C
0.8
- 40 C 25 C
0.6
125 C
0.6
125 C
0.4
= 10
0.4
V CE = 5V
0.2 0.1 IC
1 10 - COLLECTOR CURRENT (mA)
P4
100
0.2 0.1
1 10 I C - COLLECTOR CURRENT (mA)
P4
100
Collector-Cutoff Current vs Ambient Temperature
I CBO- COLLECTOR CURRENT (nA) 100
V CB = 100V
10
1
0.1
25
50 75 100 125 T A - AMBIENT TEMPERATURE (C)
P4
150
BV CER - BREAKDOWN VOLTAGE (V)
Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base
220
210
200
190
180
170 0.1 1 10 100 1000
RESISTANCE (k )
2N5401 / MMBT5401
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Input and Output Capacitance vs Reverse Voltage
f = 1.0 MHz CAPACITANCE (pF)
60
Power Dissipation vs Ambient Temperature
700 PD - POWER DISSIPATION (mW) 600 500 400 300 200 100 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150
SOT-23 TO-92
80
40
C eb
20
C cb
0 0.1 1 10 100
V R - REVERSE BIAS VOLTAGE(V)


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