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| AO4418 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4418 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4418 is Pb-free (meets ROHS & Sony 259 specifications). AO4418L is a Green Product ordering option. AO4418 and AO4418L are electrically identical. Features VDS (V) = 30V ID = 11.5A (VGS = 20V) RDS(ON) < 14m (VGS = 20V) RDS(ON) < 17m (VGS = 10V) RDS(ON) < 40m (VGS = 4.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25C Current A ID TA=70C Pulsed Drain Current Power Dissipation B Maximum 30 25 11.5 9.7 40 3 2.1 -55 to 150 Units V V A IDM TA=25C TA=70C PD TJ, TSTG W C Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient C Maximum Junction-to-Lead Symbol t 10s Steady-State Steady-State RJA RJL Typ 31 59 16 Max 40 75 24 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO4418 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 25V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=20V, ID=11.5A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=10V, ID=10A VGS=4.5V, ID=5A gFS VSD IS Forward Transconductance VDS=5V, ID=10A 14 IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 1.5 40 9.8 14.2 12.3 32 22 0.76 1 4.3 758 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 180 128 0.7 16.6 VGS=10V, VDS=15V, ID=11.5A 8.6 2.5 4.9 5.4 VGS=10V, VDS=15V, RL=1.3, RGEN=3 IF=11.5A, dI/dt=100A/s 5.1 14.4 3.7 16.9 6.6 14 18 17 40 2.4 Min 30 1 5 100 3 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=11.5A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 3: June 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4418 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 45 40 35 ID (A) 30 25 20 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 45 Normalized On-Resistance 40 35 RDS(ON) (m) 30 25 20 15 10 5 0 5 10 15 VGS=10V VGS=20V 20 25 30 VGS=4.5V 1.8 1.6 1.4 VGS=20V 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 ID=10A IS (A) 1.0E-01 125C 1.0E-02 25C 1.0E-03 25C 1.0E-04 1.0E-05 0 5 10 15 20 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics ID=10A VGS=10V VGS=3V 10V 6V 7V 5V ID(A) 3.5V 30 25 20 15 125C 10 5 0 2 2.5 3 3.5 4 4.5 5 5.5 VGS(Volts) Figure 2: Transfer Characteristics 25C VDS=5V ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 50 40 30 125C 20 10 0 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. RDS(ON) (m) AO4418 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics 1200 VDS=15V ID=11.5A Capacitance (pF) 1000 800 600 400 200 Crss 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Ciss Coss 100.0 RDS(ON) limited ID (Amps) 10.0 50 100s 1ms 10ms 0.1s 10s Power (W) 40 30 20 10 0 0.001 TJ(Max)=150C TA=25C 1.0 TJ(Max)=150C TA=25C 1s 10s DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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