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P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX70KMJ-03 HIGH-SPEED SWITCHING USE FX70KMJ-03 OUTLINE DRAWING 10 0.3 Dimensions in mm 2.8 0.2 15 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 6.5 0.3 3 0.3 E 0.75 0.15 2.54 0.25 2.54 0.25 1 23 3 * 4V DRIVE * VDSS ............................................................... -30V * rDS (ON) (MAX) ............................................. 12.3m * ID .................................................................... -70A * Integrated Fast Recovery Diode (TYP.) ...........70ns * Viso ................................................................................ 2000V APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. 2.6 0.2 1 1 GATE 2 DRAIN 3 SOURCE 2 TO-220FN MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current VGS = 0V VDS = 0V Conditions Ratings -30 20 -70 -280 -70 -70 -280 35 -55 ~ +150 -55 ~ +150 2000 2.0 4.5 0.2 Unit V V A A A A A W C C V g Jan.1999 Drain current (Pulsed) Avalanche drain current (Pulsed) L = 10H Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight AC for 1minute, Terminal to case Typical value P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX70KMJ-03 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25C) Test conditions ID = -1mA, VDS = 0V VGS = 20V, VDS = 0V VDS = -30V, VGS = 0V ID = -1mA, VDS = -10V ID = -35A, VGS = -10V ID = -26A, VGS = -4V ID = -35A, VGS = -10V ID = -35A, VDS = -10V VDS = -10V, VGS = 0V, f = 1MHz Limits Min. -30 -- -- -1.3 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -1.8 10.0 19 -0.35 55.8 11140 2300 1000 85 228 751 360 -1.0 -- 70 Max. -- 0.1 -0.1 -2.3 12.3 25 -0.43 -- -- -- -- -- -- -- -- -1.5 3.57 -- Unit V A mA V m m V S pF pF pF ns ns ns ns V C/W ns Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = -15V, ID = -35A, VGS = -10V, RGEN = RGS = 50 IS = -35A, VGS = 0V Channel to case IS = -35A, dis/dt = 50A/s PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA -103 -7 -5 -3 -2 40 -102 -7 -5 -3 -2 tw = 100s 1ms 10ms 100ms TC = 25C Single Pulse 30 20 -101 -7 -5 -3 -2 10 0 0 50 100 150 200 -100 DC -2 -3 -5-7-100 -2 -3 -5-7-101 -2 -3 -5-7-102 -2 CASE TEMPERATURE TC (C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) -100 VGS = -10V -8V -6V OUTPUT CHARACTERISTICS (TYPICAL) -50 VGS = -10V -8V PD = 35W -4V -6V -5V DRAIN CURRENT ID (A) -80 PD = 35W -5V DRAIN CURRENT ID (A) -40 -60 -4V -30 -40 Tc = 25C Pulse Test -20 -3V -20 -10 Tc = 25C Pulse Test -3V 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Jan.1999 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX70KMJ-03 HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 40 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m) Tc = 25C Pulse Test ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) -2.0 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) Tc = 25C Pulse Test -1.6 ID = -100A 32 -1.2 24 VGS = -4V -0.8 -70A 16 -10V -0.4 -35A 8 0 -100 -2 -3 -5 -7-101 -2 -3 -5-7 -102 -2 -3 -5 -7-103 DRAIN CURRENT ID (A) 0 0 -2 -4 -6 -8 -10 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) -100 DRAIN CURRENT ID (A) Tc = 25C VDS = -10V Pulse Test FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 VDS = -10V 7 Pulse Test 5 4 3 2 TC = 125C 75C 25C -60 FORWARD TRANSFER ADMITTANCE yfs (S) -80 101 7 5 4 3 2 -40 -20 0 0 -2 -4 -6 -8 -10 100 0 -10 -2 -3 -5 -7 -101 -2 -3 -5 -7 -102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 Tch = 25C SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 4 3 2 tf td(off) 105 f = 1MHZ 3 2 SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 7 VGS = 0V 5 104 7 5 3 2 Ciss tr td(on) 102 7 5 4 3 2 Coss Crss 103 7 5 3 2 -3 -5 -7 -100 -2 -3 -5 -7 -101 -2 -3 101 Tch = 25C VGS = -10V VDD = -15V RGEN = RGS = 50 -5 -7 -100 -2 -3 -5 -7 -101 -2 -3 -5 -7 -102 -2 -3 -5 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Jan.1999 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX70KMJ-03 HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) -100 VGS = 0V Pulse Test GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) -10 Tch = 25C ID = -70A SOURCE CURRENT IS (A) -8 VDS = -10V -20V -25V -80 -6 -60 TC = 25C 75C 125C -4 -40 -2 -20 0 0 40 80 120 160 200 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 -4.0 7 5 4 3 2 VGS = -10V ID = 1/2ID Pulse Test THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = -10V ID = -1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 50 100 150 -3.2 -2.4 100 7 5 4 3 2 -1.6 -0.8 10-1 -50 0 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = -1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D = 1.0 3 2 0.5 1.2 100 0.2 7 5 0.1 3 2 PDM tw 1.0 0.8 10-1 7 5 3 2 0.6 0.05 0.02 0.01 Single Pulse T D= tw T 0.4 -50 0 50 100 150 10-2 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Jan.1999 CHANNEL TEMPERATURE Tch (C) |
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