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| FJA4210 FJA4210 Audio Power Amplifier * * * * High Current Capability : IC= -10A High Power Dissipation Wide S.O.A Complement to FJA4310 1 TO-3P 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Base Current (DC) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature Value -200 -140 -6 -10 -1.5 100 150 - 55 ~ 150 Units V V V A A W C C Electrical Characteristics TC=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) Cob fT * Pulse Test : PW=20s Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Test Condition IC=-5mA, IE=0 IC=-50mA, RBE= IE=-5mA, IC=0 VCB=-200V, IE=0 VEB=-6V, IC=0 VCE=-4V, IC=-3A IC=-5A, IB=-0.5A VCB=-10V, f=1MHz VCE=-5V, IC=-1A Min. -200 -140 -6 Typ. Max. Units V V V -10 -10 50 400 30 180 -0.5 A A V pF MHz Current Gain Collector-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product hFE Classification Classification hFE R 50 ~ 100 O 70 ~ 140 Y 90 ~ 180 (c)2002 Fairchild Semiconductor Corporation Rev. B, June 2002 FJA4210 Typical Characteristics IB = - 300mA IB = - 400mA IB = - 200mA IB = - 250mA 1000 -10 -9 VCE = - 4 V o IC [A], COLLECTOR CURRENT -8 -7 -6 -5 -4 -3 -2 -1 -0 -0 -1 -2 -3 hFE, DC CURRENT GAIN IB = - 150mA IB = - 100mA Ta = 125 C o Ta = 25 C 100 Ta = - 25 C o IB = - 50mA IB = - 20mA -4 10 -0.1 -1 -10 VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT Figure 1. Static Characterstic Figure 2. DC current Gain -3.0 -1 IC = 10 IB VCE(sat) [V], SATURATION VOLTAGE -2.5 -2.0 -1.5 VCE(sat) [V], SATURATION VOLTAGE -0.1 -1.0 Ta = 125 C Ta = 25 C Ta = - 25 C o o o IC= - 10A -0.5 IC= - 5A -0.0 -0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -0.01 -0.01 -0.1 -1 -10 IB [A], BASE CURRENT IC [A], COLLECTOR CURRENT Figure 3. VCE(sat) vs. IB Characteristics Figure 4. Collector-Emitter Saturation Voltage -10 VCE = - 4 V IC (Pulse) t=10ms IC [A], COLLECTOR CURRENT -8 IC [A], COLLECTOR CURRENT -10 IC (DC) t=100ms -6 Ta = 25 C -4 o -1 -2 Ta = 125 C Ta = - 25 C o o TC = 25 C Single Pulse -0.1 -1.5 -2.0 -10 -100 o -0 -0.0 -0.5 -1.0 VBE [V], Base-Emitter On VOLTAGE VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 5. Base-Emitter On Voltage Figure 6. Forward Bias Safe Operating Area (c)2002 Fairchild Semiconductor Corporation Rev. B, June 2002 FJA4210 Typical Characteristics (Continued) 140 PC[W], COLLECTOR POWER DISSIPATION 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TC[ C], CASE TEMPERATURE o Figure 7. Power Derating (c)2002 Fairchild Semiconductor Corporation Rev. B, June 2002 FJA4210 Package Demensions TO-3P 15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 9.60 0.20 4.80 0.20 1.50 -0.05 +0.15 12.76 0.20 19.90 0.20 16.50 0.30 3.00 0.20 1.00 0.20 3.50 0.20 2.00 0.20 13.90 0.20 23.40 0.20 18.70 0.20 1.40 0.20 5.45TYP [5.45 0.30] 5.45TYP [5.45 0.30] 0.60 -0.05 +0.15 Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. B, June 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet seriesTM FAST(R) DISCLAIMER FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2002 Fairchild Semiconductor Corporation Rev. H7 |
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