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DISCRETE SEMICONDUCTORS DATA SHEET BF763 NPN 2 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION NPN transistor in a plastic SOT54 (TO-92 variant) envelope. It is primarily intended for use in RF amplifiers and oscillators. PINNING PIN 1 2 3 DESCRIPTION Code: F763 emitter base collector 1 2 3 BF763 MSB034 Fig.1 SOT54. QUICK REFERENCE DATA SYMBOL V(BR)CEO IC Ptot hFE fT PARAMETER collector-emitter breakdown voltage open base DC collector current total power dissipation DC current gain transition frequency up to Tamb = 60 C IC = 5 mA; VCE = 10 V; Tj = 25 C CONDITIONS MIN. 15 - - 25 TYP. - - - - 1.8 MAX. - 25 360 250 - GHz UNIT V mA mW IC = 5 mA; VCE = 10 V; f = 100 MHz - LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation storage temperature junction temperature up to Tamb = 60 C open base CONDITIONS open emitter - - - - -65 - MIN. MAX. 15 25 25 360 150 150 UNIT V V mA mW C C THERMAL RESISTANCE SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient in free air CONDITIONS THERMAL RESISTANCE 250 K/W September 1995 2 Philips Semiconductors Product specification NPN 2 GHz wideband transistor CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CEO V(BR)CBO VCE sat ICBO hFE fT F PARAMETER collector-base breakdown voltage collector-emitter saturation voltage collector cut-off current DC current gain transition frequency noise figure CONDITIONS IC = 10 A; IE = 0 IC = 10 mA; IB = 1 mA IE = 0; VCB = 10 V IC = 5 mA; VCE = 10 V IC = 5 mA; VCE = 10 V; f = 100 MHz IC = 5 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 C; Zs = 60 MIN. 15 25 - - 25 - - TYP. - - - - - 1.8 5.0 BF763 MAX. UNIT - - 0.5 50 250 - - GHz dB V V V nA collector-emitter breakdown voltage IC = 1 mA; IB = 0 September 1995 3 Philips Semiconductors Product specification NPN 2 GHz wideband transistor PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads (on-circle) BF763 SOT54 variant c L2 E d A L b 1 2 D e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm Notes 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 variant REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-04-14 A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) max 2.5 L2 max 2.5 September 1995 4 Philips Semiconductors Product specification NPN 2 GHz wideband transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BF763 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1995 5 |
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