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| FJP3307D High Voltage Fast Switching NPN Power Transistor FJP3307D High Voltage Fast Switching NPN Power Transistor Features * Built-in Diode between Collector and Emitter * Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram C B 1 1.Base TO-220 2.Collector 3.Emitter E Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) * Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC = 25C) Junction Temperature Storage Temperature Value 700 400 9 8 16 4 80 150 -55 ~ 150 Units V V V A A A W C C * Pulse Test: PW = 300s, Duty Cycle = 2% Pulsed Electrical Characteristics Symbol BVCBO BVCEO BVEBO IEBO hFE1 hFE2 VCE(sat) TC = 25C unless otherwise noted Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Conditions IC = 500A, IE = 0 IC = 5mA, IB = 0 IE = 500A, IC = 0 VEB = 9V, IC = 0 VCE = 5V, IC = 2A VCE = 5V, IC = 5A IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A Min. 700 400 9 Typ. Max Units V V V 1 8 5 40 30 1 2 3 1.2 1.6 mA V V V V V VBE(sat) Base-Emitter Saturation Voltage IC = 2A, IB = 0.4A IC = 5A, IB = 1A (c)2004 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FJP3307D Rev. 1.0.0 FJP3307D High Voltage Fast Switching NPN Power Transistor Electrical Characteristics Symbol VF Cob tSTG tF tSTG tF Diode Forward Voltage Output Capatitance Storage Time Fall Time Storage Time Fall Time TC = 25C unless otherwise noted (Continued) Parameter IC = 3A Conditions VCB = 10V, IE = 0, f = 1MHz VCC = 125V, IC = 5A IB1 = -IB2 = 1A, RL = 50 VCC = 30V, IC = 5A, L=200H IB1=1A, RBB = 0, VBE(OFF)= -5V VCLAMP = 250V Min. Typ. 60 Max 2.5 3 0.7 2.3 150 Units V pF s s s ns * Pulse test: PW=300s, Duty cycle=2% hFE Classification Classification hFE1 H1 15 ~ 28 H2 26 ~ 39 FJP3307D Rev. 1.0.0 2 www.fairchildsemi.com FJP3307D High Voltage Fast Switching NPN Power Transistor Typical Performance Characteristics Figure 1. Static Characterstic 5.0 4.5 Figure 2. DC Current Gain (H1 Grade) 100 VCE = 5V IB=300mA TC = 125 C o IC [A], COLLECTOR CURRENT 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 1 2 3 4 5 6 TC = 75 C o hFE, DC CURRENT GAIN TC = - 25 C 10 o TC = 25 C o IB=100mA IB=50mA 7 8 9 10 1 0.1 1 10 VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT Figure 3. DC Current Gain (H2 Grade) 100 TC = 125 C o Figure 4. Collector-Emitter Saturation Voltage 10 TC = 75 C o VCE = 5V VCE(sat),[V] SATURATION VOLTAGE IC = 5 IB TC = 125 C o hFE, DC CURRENT GAIN TC = - 25 C o TC = 25 C o 1 TC = 75 C TC = 25 C TC = - 25 C 0.1 o o o 10 1 0.1 1 10 0.01 0.01 0.1 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 5. Base-Emitter Saturation Voltage 10 1000 Figure 6. Output Capacitance f = 1MHz, IE = 0 IC = 5 IB VBE(sat)[V], SATURATION VOLTAGE COB [pF], OUTPUT CAPACITANCE 1 10 1 TC = - 25 C o TC = 25 C o 100 TC = 125 C o TC = 75 C o 0.1 0.01 0.1 10 1 10 100 IC [A], COLLECTOR CURRENT VCB [V], COLLECTOR-BASE VOLTAGE FJP3307D Rev. 1.0.0 3 www.fairchildsemi.com FJP3307D High Voltage Fast Switching NPN Power Transistor Typical Performance Characteristics (Continued) Figure 7. Power Derating PC [W}, COLLECTOR POWER DISSIPATION 100 Figure 8. Reverse Biased Safe Operating Area 100 80 IC [A], COLLECTOR CURRENT 10 60 40 1 20 VCC = 50V, IB1 = - IB2 = 1A L = 1mH 0.1 10 100 1000 0 0 25 50 o 75 100 125 150 175 200 TC [ C], CASE TEMPERATURE VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 9. Forward Biased Safe Operating Area 100 IC [A], COLLECTOR CURREMT IC(MAX), Pulse 10 IC(MAX), DC 1ms 100s 10s 1 0.1 TC = 25 C Single Pulse 0.01 1 10 100 1000 o VCE [V], COLLECTOR-EMITTER VOLTAGE FJP3307D Rev. 1.0.0 4 www.fairchildsemi.com FJP3307D High Voltage Fast Switching NPN Power Transistor Mechanical Dimensions TO-220 9.90 0.20 1.30 0.10 2.80 0.10 4.50 0.20 (8.70) o3.60 0.10 (1.70) 1.30 -0.05 +0.10 9.20 0.20 (1.46) 13.08 0.20 (1.00) (3.00) 15.90 0.20 1.27 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20] 10.08 0.30 18.95MAX. (3.70) (45 ) 0.50 -0.05 +0.10 2.40 0.20 10.00 0.20 Dimensions in Millimeters FJP3307D Rev. 1.0.0 5 www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I18 |
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