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LESHAN RADIO COMPANY, LTD.
Silicon Tuning Diode
This device is designed for 900 MHz frequency control and tuning applications. It provides solid-state reliability in replacement of mechanical tuning methods. * Controlled and Uniform Tuning Ratio * Available in Surface Mount Package * Available in 8 mm Tape and Reel
MMBV809LT1
4.5-6.1 pF VOLTAGE VARIABLE CAPACITANCE DIODES
3
1
1 ANODE
(
3 CATHODE
2
CASE 318-08, STYLE 8 SOT- 23 (TO-236AB)
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current Device Dissipation(1) @T A = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ T stg Value 20 20 225 1.8 +125 -55 to +125 Unit Vdc mAdc mW mW/C C C
DEVICE MARKING
MMBV809LT1=5K
ELECTRICAL CHARACTERISTICS(TA=25C unless otherwise noted)
Characteristic-All Types Reverse Breakdown Voltage (IR=10Adc) Reverse Voltage Leakage Current (V R=15Vdc) Symbol V (BR)R I
R
Min 20 --
Max -- 50
Unit Vdc nAdc
C T Diode Capacitance V R =2.0Vdc,f=1.0MHz pF Device Type MMBV809LT1 Min
4.5
Q,Figure of Merit V R =3.0Vdc f=500MHz Typ
75
C R ,Capacitance Ratio C 2/ C 8 f=1.0MHz(2) Min
1.8
Typ
5.3
Max
6.1
Max
2.6
1. FR-5 Board 1.0 x 0.75 x 0.62 in. 2. CR is the ratio of Ct measured at 2.0 Vdc divided by Ct measured at 8.0 vdc
MMBV809LT1-1/2
LESHAN RADIO COMPANY, LTD.
MMBV809LT1
TYPICAL CHARACTERISTICS
10 9 CT , DIODE CAPACITANCE (pF) Q, FIGURE OF MERIT 8 7 6 5 4 3 2 1 0 0.5 1 2 3 4 5 8 10 15 10 0.1 1.0 f, FREQUENCY (GHz) 10 VR = 3 Vdc TA = 25C 100 1000
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
1000 R S , SERIES RESISTANCE (MHz) VR = 3.0 Vdc f = 1.0 MHz 800
Figure 2. Figure of Merit
CT , DIODE CAPACITANCE (NORMALIZED)
1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 -75 -50 -25 0 +25 +50 +75 +100 +125 VR = 3.0 Vdc f = 1.0 MHz
600
400
0
0.2
0.4
0.6
0.8
1.0
1.2
f, FREQUENCY (GHz)
TA, AMBIENT TEMPERATURE (C)
Figure 3. Series Resistance
Figure 4. Diode Capacitance
MMBV809LT1-2/2

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Price & Availability of MMBV809LT1

Part #	Manufacturer	Description	Price	BuyNow Qty.
MMBV809LT1 73AK6319	onsemi	Diode Tuning Ss 20V Sot23 \|Onsemi MMBV809LT1	25000: USD0.123 10000: USD0.125 2500: USD0.136	0
MMBV809LT1G 73AK6320	onsemi	Mmbv809Lt1G, Zener Diodes \|Onsemi MMBV809LT1G	25000: USD0.123 10000: USD0.125 2500: USD0.136	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
MMBV809LT1	Motorola Semiconductor Products	Varactor Diode, Single, 5.3pf C(t), To-236ab	5306: USD0.1044 1438: USD0.1131 1: USD0.261	7559
MMBV809LT1	onsemi	Varactor Diode, Single, 5.3pf C(t), To-236ab	1534: USD0.174 129: USD0.261 1: USD0.87	2400

Part #	Manufacturer	Description	Price	BuyNow Qty.
MMBV809LT1	onsemi	DIODE TUNING SS 20V SOT23 '	1000: USD0.116 500: USD0.1229 100: USD0.1283 25: USD0.1338 1: USD0.1365	4269
MMBV809LT1G	onsemi	Variable Capacitance Diode, Ultra High Frequency '	1000: USD0.116 500: USD0.1229 100: USD0.1283 25: USD0.1338 1: USD0.1365	99000

Part #	Manufacturer	Description	Price	BuyNow Qty.
MMBV809LT1G	MFG UPON REQUEST			963

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