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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ648
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The 2SJ648 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ648 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
1.6 0.1 0.8 0.1
PACKAGE DRAWING (Unit: mm)
0.3 +0.1 -0 0.15 +0.1 -0.05
3 0 to 0.1 2 0.2 0.5
+0.1 -0
FEATURES
* 2.5 V drive available * Low on-state resistance RDS(on)1 = 1.45 MAX. (VGS = -4.5 V, ID = -0.2 A) RDS(on)2 = 1.55 MAX. (VGS = -4.0 V, ID = -0.2 A) RDS(on)3 = 2.98 MAX. (VGS = -2.5 V, ID = -0.15 A)
1
0.5
0.6 0.75 0.05
1.0 1.6 0.1
ORDERING INFORMATION
PART NUMBER 2SJ648 PACKAGE SC-75 (USM)
1: Source 2: Gate 3: Drain
Marking: H1
EQUIVALENT CIRCUIT
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
Note2
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Total Power Dissipation Channel Temperature Storage Temperature -20 m12 m0.4 m1.6 200 150 -55 to +150 V V A A mW C C
Gate Protection Diode Gate
Drain
Body Diode
Source
Notes 1. PW 10 s, Duty Cycle 1% 2 2. Mounted on ceramic substrate of 300 mm x 0.64 mm. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. This product is electrostatic-sensitive device due to low ESD capability and should be handled with caution for electrostatic discharge. VESD = 100 V TYP. (C = 200 pF, R = 0 , Single pulse)
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Caution
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D16597EJ2V0DS00 (2nd edition) Date Published November 2004 NS CP(K) Printed in Japan
The mark
shows major revised points.
2003
2SJ648
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3
TEST CONDITIONS VDS = -20 V, VGS = 0 V VGS = m12 V, VDS = 0 V VDS = -10 V, ID = -1.0 mA VDS = -10 V, ID = -0.2 A VGS = -4.5 V, ID = -0.2 A VGS = -4.0 V, ID = -0.2 A VGS = -2.5 V, ID = -0.15 A VDS = -10 V VGS = 0 V f = 1 MHz VDD = -10 V, ID = -0.2 A VGS = -4.0 V RG = 10
MIN.
TYP.
MAX. -1.0
UNIT
A A
V S
m10
-0.8 0.2 -1.3 0.6 1.17 1.25 2.25 29 15 3.0 23 39 50 33 1.45 1.55 2.98 -1.8
Drain to Source On-state Resistance
pF pF pF ns ns ns ns V
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Body Diode Forward Voltage
Ciss Coss Crss td(on) tr td(off) tf VF(S-D)
IF = 0.4 A, VGS = 0 V
0.93
Note Pulsed PW 350 s, Duty Cycle 2%
TEST CIRCUIT SWITCHING TIME
VGS(-) D.U.T. RL PG. RG VDD
VDS
VGS
Wave Form
0
10%
VGS
90%
VDS(-)
90% 90% 10% 10%
VDS VGS (-) 0 = 1 s Duty Cycle 1%
Wave Form
0 td(on) ton
tr
td(off) toff
tf
2
Data Sheet D16597EJ2V0DS
2SJ648
TYPICAL CHARACTERISTICS (TA = 25C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - mW
240
Mounted on ceramic substrate of 2 300 mm x 0.64 mm
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
- 1.6 Pulsed
ID - Drain Current - A
200
- 1.2
VGS = -4.5 V
-4.0 V
160
120
- 0.8
80
- 0.4
40
-2.5 V
0
0 25 50 75 100 125 150 175
0 0 -1 -2 -3 -4 -5
TA - Ambient Temperature - C FORWARD TRANSFER CHARACTERISTICS
- 10 VDS = -10 V Pulsed - 1.6
VDS - Drain to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
VDS = -10 V ID = -1.0 mA - 1.4
ID - Drain Current - A
-1
- 0.1 TA = 125C 75C 25C -25C
VGS(off) - Gate Cut-off Voltage - V
- 1.2
- 0.01
-1
- 0.001
- 0.8
- 0.0001 0 -1 -2 -3 -4
- 0.6 - 50
0
50
100
150
VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S
VDS = -10 V Pulsed TA = -25C 25C 75C 125C
Tch - Channel Temperature - C DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance -
4 Pulsed
10
3
VGS = -2.5 V, ID = -0.15 A
1
2
0.1
1 VGS = -4.0 V, ID = -0.20 A VGS = -4.5 V, ID = -0.20 A 0 - 50 0 50 100 150
0.01 - 0.001
- 0.01
- 0.1
-1
- 10
ID - Drain Current - A
Tch - Channel Temperature - C
Data Sheet D16597EJ2V0DS
3
2SJ648
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - RDS(on) - Drain to Source On-state Resistance -
4 ID = -0.20 A Pulsed 3
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
4 VGS = -4.5 V Pulsed 3 TA = 125C 75C 2
2
1
1 25C -25C 0 - 0.01
0 0 -2 -4 -6 -8 - 10 - 12
- 0.1
-1
- 10
VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance -
VGS = -4.0 V Pulsed
ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance -
4 TA = 125C 75C 3 VGS = -2.5 V Pulsed
4
3
TA = 125C 75C
2
2
25C 1 -25C
1 25C -25C 0 - 0.01 - 0.1 -1 - 10
0 - 0.01
- 0.1
-1
- 10
ID - Drain Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100 VGS = 0 V f = 1.0 MHz Ciss 1000
ID - Drain Current - A SWITCHING CHARACTERISTICS
Coss 10
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
VDD = -10 V VGS = -4.0 V RG = 10
100 tr td(off) tf td(on)
Crss
1 - 0.1
-1
- 10
- 100
10 - 0.01
- 0.1
-1
- 10
VDS - Drain to Source Voltage - V
ID - Drain Current - A
4
Data Sheet D16597EJ2V0DS
2SJ648
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
10 VGS = 0 V Pulsed
IF - Diode Forward Current - A
1
0.1
0.01
0.001 0.4 0.6 0.8 1 1.2 1.4
VF(S-D) - Source to Drain Voltage - V
Data Sheet D16597EJ2V0DS
5
2SJ648
* The information in this document is current as of November, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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