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NTTD4401F FETKYt Power MOSFET and Schottky Diode
-20 V, -3.3 A P-Channel with 20 V, 1.0 A Schottky Diode, Micro8t Package
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The FETKY product family incorporates low RDS(on), true logic level MOSFETs packaged with industry leading, low forward drop, low leakage Schottky Barrier Diodes to offer high efficiency components in a space saving configuration. Independent pinouts for TMOS and Schottky die allow the flexibility to use a single component for switching and rectification functions in a wide variety of applications.
Features
MOSFET PRODUCT SUMMARY
V(BR)DSS -20 V 100 mW @ -2.7 V -2.7 A RDS(on) Typ 70 mW @ -4.5 V ID Max -3.3 A
* Low VF and Low Leakage Schottky Diode * Lower Component Placement and Inventory Costs along with Board * * * * * *
Space Savings Logic Level Gate Drive - Can be Driven by Logic ICs Pb-Free Package is Available Buck Converter Synchronous Rectification Low Voltage Motor Control Load Management in Battery Packs, Chargers, Cell Phones, and other Portable Products
Rating Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current Steady State Steady State TA = 25C TA = 100C TA = 25C TA = 25C TA = 100C TA = 25C PD IDM TJ, TSTG EAS TL PD ID Symbol VDSS VGS ID Value -20 -10 3.3 2.1 1.42 2.4 1.5 0.78 10 -55 to 150 150 260 W A C mJ C W A Unit V V A
SCHOTTKY DIODE SUMMARY
VR Max 20 V S IF Max 2.0 A VF Max 600 mV @ IF = 2.0 A A
Applications
G
D P-Channel MOSFET
C Schottky Diode
MOSFET MAXIMUM RATINGS (TA = 25C unless otherwise noted) MARKING DIAGRAM & PIN ASSIGNMENT
C CD D 8 1 Micro8 CASE 846A 8 WW BG G G 1 A ASG BG = Specific Device Code WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location)
t = 10 ms
Operating Junction and Storage Temperature Single Pulse Drain-to-Source Avalanche Energy Starting TA = 25C (t v 10 s) Lead Temperature for Soldering Purposes (1/8 from case for 10 s)
ORDERING INFORMATION
Device NTTD4401FR2 NTTD4401FR2G Package Micro8 Micro8 (Pb-Free) Shipping 4000/Tape & Reel 4000/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.172 in sq).
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2007
1
January, 2007 - Rev. 5
Publication Order Number: NTTD4401F/D
NTTD4401F
SCHOTTKY DIODE MAXIMUM RATINGS (TA = 25C unless otherwise noted)
Rating Peak Repetitive Reverse Voltage Average Forward Current (Rated VR, TA = 100C) Peak Repetitive Forward Current (Note 3) Non-Repetitive Peak Surge Current (Note 4) Symbol V IO IFRM IFSM Value 20 1.0 2.0 20 Unit V A A A
THERMAL RESISTANCE RATINGS
FET Rating Junction-to-Ambient - Steady State (Note 5) Junction-to-Ambient - Steady State (Note 6) Symbol RqJA RqJA 88 160 Schottky Max 135 250 Unit C/W C/W
MOSFET ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current (Note 7) V(BR)DSS IDSS VGS = 0 V VGS = 0 V, VDS = -16 V VGS = 0 V, TJ = 125C, VDS = -16 V Gate-to-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance VGS(TH) VGS(TH)/TJ RDS(on) VGS = VDS, ID = -250 mA - VGS = -4.5 V, ID = -3.3 A VGS = -2.5 V, ID = -1.2 A Forward Transconductance gFS VDS = -10 V, ID = -2.7 A -0.5 - - - - - 2.5 70 100 4.2 -1.5 - 90 150 - S V mV/C mW IGSS VDS = 0 V, VGS = 10 V -20 - - - - - - - - -1.0 -25 100 nA V mA Symbol Test Condition Min Typ Max Unit
CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-to-Source Gate Charge Gate-to-Drain "Miller'' Charge SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge 3. 4. 5. 6. 7. VSD tRR ta tb QRR - VGS = 0 V, dIS/dt = 100 A/ms, IS = -3.3 A VGS = 0 V, IS = -2.0 A - - - - - -0.88 37 16 21 0.025 -1.0 50 - - 0.05 nC V ns td(ON) tr td(OFF) tf VGS = -4.5 V, VDD = -10 V, ID = -3.3 A, RG = 6.0 W - - - - 11 35 33 29 20 65 60 55 ns CISS COSS CRSS QG(TOT) QGS QGD VGS = -4.5 V, VDS = -16 V, ID = -3.3 A VGS = 0 V, f = 1.0 MHz, VDS = -16 V - - - - - - 550 200 50 10 1.5 5.0 750 300 175 18 3.0 10 nC pF
Rated VR, square wave, 20 kHz, TA = 105C. Surge applied at rated load conditions, half-wave, single phase, 60 Hz. Surface-mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces). Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.172 in sq). Body diode leakage current.
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NTTD4401F
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic Reverse Breakdown Voltage Reverse Leakage Current Symbol BV IR Test Condition IR = 1.0 mA VR = 20 V TA = 25C TA = 125C TA = 25C TA = 125C TA = 25C TA = 125C Min 20 - - - - - - - Typ - - - - - - - 10,000 Max - 0.05 10 0.5 0.39 0.6 0.53 - V/ms V Unit V mA
Forward Voltage
VF
IF = 1.0 A
IF = 2.0 A Voltage Rate of Change dV/dt VR = 20 V
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NTTD4401F
TYPICAL ELECTRICAL CHARACTERISTICS
4 VGS = -2.1 V -ID, DRAIN CURRENT (AMPS) 3 VGS = -10 V VGS = -4.5 V VGS = -2.5 V TJ = 25C -ID, DRAIN CURRENT (AMPS) 4 5 VDS > = -10 V
VGS = -1.9 V
3
2 VGS = -1.7 V 1 VGS = -1.5 V 0 0 2 4 6 8 10 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
2
TJ = 25C
1 0 1
TJ = 100C 1.5
TJ = 55C 2 2.5 3
-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.2 TJ = 25C 0.15
0.12 TJ = 25C 0.1 VGS = -2.7 V 0.08 VGS = -4.5 V 0.06
0.1
0.05
0 2 4 6 8 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
0.04 1 1.5 2 2.5 3 3.5 4 4.5 -ID, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance vs. Gate-to-Source Voltage
Figure 4. On-Resistance vs. Drain Current and Gate Voltage
1.6 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) ID = -3.3 A VGS = -4.5 V
1000 VGS = 0 V -IDSS, LEAKAGE (nA) 100 TJ = 100C 10 TJ = 25C 1 TJ = 125C
1.4
1.2
1
0.8
0.1
0.6 -50
0.01 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) 150 0 4 8 12 16 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 20
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current vs. Voltage
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NTTD4401F
TYPICAL ELECTRICAL CHARACTERISTICS
1500 VDS = 0 V C, CAPACITANCE (pF) 1200 Ciss VGS = 0 V TJ = 25C 5 QT 4 20 18 16 14 3 Q1 2 ID = -3.3 A TJ = 25C Q2 VGS 12 10 8 6 1 0 0 2 4 6 8 10 12 14 Qg, TOTAL GATE CHARGE (nC) VDS 4 2 0 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
900 Crss 600 Ciss
300
Coss Crss
0 10 5 0 -VGS -VDS 5 10 15 20
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge
1000 VDD = -10 V ID = -1.2 A VGS = -2.7 V t, TIME (ns) t, TIME (ns)
100
td (off) tr tf
td (on) 10
100 tr td (off) td (on) 10 1.0 10 RG, GATE RESISTANCE (W) 100 tf
VDD = -10 V ID = -3.3 A VGS = -4.5 V 1.0 1.0 10 RG, GATE RESISTANCE (W) 100
Figure 9. Resistive Switching Time Variation vs. Gate Resistance
2 -IS, SOURCE CURRENT (AMPS) VGS = 0 V TJ = 25C
Figure 10. Resistive Switching Time Variation vs. Gate Resistance
1.6
di/dt IS
1.2
trr ta tb TIME
0.8 tp 0.4 0 0.4 IS 0.25 IS
0.5
0.6
0.7
0.8
0.9
1
Figure 12. Diode Reverse Recovery Waveform
-VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 11. Diode Forward Voltage vs. Current
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NTTD4401F
1 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESPONSE
D = 0.5
0.2 Normalized to Rja at Steady State (1 inch pad) 0.0125 W 0.0563 W 0.05 0.02 0.01 0.021 F 0.137 F 1.15 F 2.93 F 152 F 261 F 0.110 W 0.273 W 0.113 W 0.436 W
0.1
0.1
Single Pulse 0.01 1E-03
1E-02
1E-01
1E+00 t, TIME (s)
1E+03
1E+02
1E+03
Figure 13. FET Thermal Response
TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 10 TJ = 125C
TJ = 125C 1.0 85C 25C
1.0
85C
25C
-40 C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 14. Typical Forward Voltage
Figure 15. Maximum Forward Voltage
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NTTD4401F
TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
IR, MAXIMUM REVERSE CURRENT (AMPS) 1E-2 IR, REVERSE CURRENT (AMPS) TJ = 125C 1E-3 85C 1E-4 1E-1 TJ = 125C
1E-2 1E-3
1E-5 25C 1E-6 1E-7
1E-4 25C 1E-5 1E-6
0
5.0
10
15
20
0
5.0
10
15
20
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 16. Typical Reverse Current
Figure 17. Maximum Reverse Current
IO , AVERAGE FORWARD CURRENT (AMPS)
1000 TYPICAL CAPACITANCE AT 0 V = 170 pF C, CAPACITANCE (pF)
1.6 dc 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (C) Ipk/Io = 10 Ipk/Io = 20 SQUARE WAVE Ipk/Io = p Ipk/Io = 5.0 FREQ = 20 kHz
100
10 0 5.0 10 15 20 VR, REVERSE VOLTAGE (VOLTS)
Figure 18. Typical Capacitance
Figure 19. Current Derating
PFO , AVERAGE POWER DISSIPATION (WATTS)
0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.5 1.0 1.5 2.0 IO, AVERAGE FORWARD CURRENT (AMPS) Ipk/Io = p Ipk/Io = 5.0 Ipk/Io = 10 Ipk/Io = 20 SQUARE WAVE dc
Figure 20. Forward Power Dissipation
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NTTD4401F
PACKAGE DIMENSIONS
Micro8t CASE 846A-02 ISSUE G
D
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. 846A-01 OBSOLETE, NEW STANDARD 846A-02. MILLIMETERS NOM MAX -- 1.10 0.08 0.15 0.33 0.40 0.18 0.23 3.00 3.10 3.00 3.10 0.65 BSC 0.40 0.55 0.70 4.75 4.90 5.05 MIN -- 0.05 0.25 0.13 2.90 2.90 INCHES NOM -- 0.003 0.013 0.007 0.118 0.118 0.026 BSC 0.016 0.021 0.187 0.193 MIN -- 0.002 0.010 0.005 0.114 0.114
HE
E
PIN 1 ID
e b 8 PL 0.08 (0.003)
M
TB
S
A
S
-T- PLANE 0.038 (0.0015) A1
SEATING
DIM A A1 b c D E e L HE
MAX 0.043 0.006 0.016 0.009 0.122 0.122 0.028 0.199
A c L
SOLDERING FOOTPRINT*
8X
1.04 0.041
0.38 0.015
8X
3.20 0.126
4.24 0.167
5.28 0.208
6X
0.65 0.0256
SCALE 8:1
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
FETKY and Micro8 are registered trademarks of International Rectifier Corporation.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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NTTD4401F/D

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