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| S8550 PNP General Purpose Transistors P b Lead(Pb)-Free TO-92 1. E MIT T E R 2. B A SE 3. COL L E CTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-E m itter Voltage Collector-B as e Voltage E m itter-B as e VOltage Collector Current Total Device Dis s ipation TA=2 5 C J unction Tem perature S torage, Tem perature Symbol V CE O V CB O VE B O IC PD Tj Ts tg Value -2 5 -4 0 -5 . 0 -5 0 0 0.625 150 -5 5 to +1 5 0 Unit Vdc Vdc Vdc m Adc W C C ELECTRICAL CHARACTERISTICS Characteristics Collector-E m itter B reakdown Voltage (I C = -0 . 1 m Adc, I B =0 ) Collector-B as e B reakdown Voltage (I C = -1 0 0 Adc, I E =0 ) E m itter-B as e B reakdown Voltage (I E = -1 0 0 Adc, I C =0 ) Collector Cutoff Current (V CE = -2 0 Vdc, I B =0 ) Collector Cutoff Current (V CB = -4 0 Vdc, I E =0 ) E m itter Cutoff Current (V E B = -3 . 0 V d c, I C =0 ) Symbol V (B R )CE O V (B R )CB O V (B R )E B O I CE 0 I CB O IE B O Min -2 5 -4 0 -5 . 0 Max -0 . 2 -0 . 1 -0 . 1 Unit Vdc Vdc Vdc uAdc uAdc uAdc WEITRON http://www.weitron.com.tw S8550 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC=- 50 mAdc, VCE=-1.0 Vdc) DC Current Gain (IC= -500 mAdc, VCE= 1.0 Vdc) Collector-Emitter Saturation Voltage (IC= -500 mAdc, IB= -50 mAdc) Base-Emitter Saturation Voltage (IC= -500 mAdc, IB= -50 mAdc) Current-Gain-Bandwidth Product (IC= -20 mAdc, VCE=-6.0 Vdc, f=30MHz) hFE (1) hFE (2) VCE(sat) VBE(sat) fT 85 50 150 - 300 -0.6 -1.2 Vdc Vdc - - MHz Classification of hFE(1) Rank Range B 85-160 C 120-200 D 160-300 WEITRON http://www.weitron.com.tw S8550 WEITRON http://www.weitron.com.tw S8550 TO-92 Outline Dimensions E unit:mm C J K G Dim A B C D E G H J K L H TO-92 Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50 B L WEITRON http://www.weitron.com.tw D A |
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