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WTC2306A N-Channel Enhancement Mode Power MOSFET 1 GATE 3 DRAIN DRAIN CURRENT 5 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE Features: *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <30m@V GS =10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package SOURCE 2 3 1 2 SOT-23 ( Maximum Ratings(TA=25 Rating Drain-Source Voltage Gate-Source Voltage Con tinuous Drain Current 3 ,V GS @4.5V(T A ,V GS @4.5V(T A Pulsed Drain Current 1,2 Unless Otherwise Specified) Symbol VDS VGS ID IDM PD R JA TJ , Tstg Value 30 12 5 4 20 1.38 90 - 55~+150 Unit V A Total Power Dissipation(TA=25 C) Maximum Thermal Resistance Junction-ambient 3 Operating Junction and Storage Temperature Range W C/W C Device Marking WTC2306A=2306A http:www.weitron.com.tw WEITRON 1/6 13-May-05 WTC2306A Electrical Characteristics (TA = 25 Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS =0,ID =250A Gate-Source Threshold Voltage VDS =VGS ,ID =250A Gate-Source Leakage Current VGS=20V Drain- Sou rce Leakage Current(Tj=25C) VDS =30V,VGS =0 Drain- Sou rce Leakage Current(Tj=70C) VDS =24V,VGS =0 Drain-Source On-Resistance VGS =10V,ID=5A VGS =4.5V,ID=5A VGS =2.5V,ID=2.6A VGS =1.8V,ID=1.0A Forward Transconductance VDS =5 V,ID =5A R DS(o n) 13 30 35 50 90 m IDSS 25 V(BR)DSS VGS(Th) IGSS 30 0.5 V 1.2 100 1 A nA g fs S Dynamic Input Capacitance VGS =0V,VDS =25V,f=1.0MHz Output Capacitance VGS =0V,VDS =25V,f=1.0MHz Reverse Transfer Capacitance VGS =0V,VDS =25V,f=1.0MHz C iss C oss C rss 660 90 70 1050 pF http:www.weitron.com.tw WEITRON 2/6 13-May-05 WTC2306A Switching Turn-on Delay Time2 VDS=15V,VGS=10V,ID=5A,RD=3,RG=3.3 Rise Time VDS=15V,VGS=10V,ID=5A,RD=3,RG=3.3 Turn-o ff De lay Time VDS=15V,VGS=10V,ID=5A,RD=3,RG=3.3 Fall T ime VDS=15V,VGS=10V,ID=5A,RD=3,RG=3.3 Total Gate Charge 2 VDS=16V,VGS=4.5,ID=5.0A Gate-Source C harge VDS=16V,VGS=4.5,ID=5.0A Gate-Drain C hange VDS=16V,VGS=4.5,ID=5.0A t d (on) 6 20 20 3 8.7 1.5 3.2 ns t d (off) 15 nC tr tf Qg Q gs Q gd Source-Drain Diode Characteristics Forward On Voltage 2 VGS=0,IS=1.2A VSD 2 - 14 7 1.2 - V nS nC Reverse Recovery Time VGS =0,I S =5A,dl/dt=100A/ s Reverse Recovery Charge VGS =0,I S =5A,dl/dt=100A/ s Trr Q rr Note: 1. Pulse width limited by Max, junction temperature. 2. pulse width300s, duty cycle2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270/W when mounted on min, copper pad. http:www.weitron.com.tw WEITRON 3/6 13-May-05 WTC2306A 80 50 TA=25C 5.0V 4.5V TA=125C ID ,DRAIN CURRENT (A) 60 ID ,Drain Current (A) 4.0V 40 5.0V 4.5V 30 4.0V 40 VG=2.5V 20 20 VG=2.5V 10 0 0 1 2 3 4 5 6 7 0 0 1 FIG.1 Typical Output Characteristics 100 1.8 VDS ,DRAIN-TO-SOURCE VOLTAGE(V) Fig.2 Typical Output Characteristics VDS ,Drain-to-source Voltage(V) 2 3 4 5 6 7 8 80 I D = 5.3A TA = 25C Normalized RDs(on) 1.6 1.4 1.2 1.0 0.8 ID = 5.3A VG = 4.5V RDs(on) (m) 60 40 20 1 3 5 7 9 11 0.6 -50 0 50 100 150 Fig.3 On-Resistance v.s. Gate Voltage 10 1.6 1.4 VGS ,Gate-to-source Voltage(V) Fig.4 Normalized OnResistance Tj ,Junction Temperature(C) VGS(th)(V) 1.4 1 Tj = 150C 1.2 1.0 0.8 0.6 0.4 I S( A ) Tj = 25C 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 0.2 -50 0 50 100 150 Fig.5 Forward Characteristics of Reverse Diode VDS ,Source-to-Drain Voltage(V) Fig.6 Gate Threshold Voltage v.s. Junction Temperature Tj ,Junction Temperature(C) WEITRON http://www.weitron.com.tw 4/6 13-May-05 WTC2306A 14 10000 VGS , Gate to Source Voltage(V) 12 10 8 6 4 2 0 I D = 5A VDS = 16V 1000 f = 1.0MHz Ciss C(pF) 100 Crss Coss 0 5 10 15 20 25 10 1 5 9 13 17 21 25 29 Fig 7. Gate Charge Characteristics 100 QG , Total Gate Charge(nC) VDS, Drain-to-Source Voltage(V) Fig 8. Typical Capacitance Characteristics 1 Duty factor = 0.5 0.2 0.1 0.1 0.05 10 ID(A) 1 1ms Normalized Thermal Response(R ja) 0.01 PDM t T 10ms 0.1 0.01 TA = 25C Single Pulse 0.01 0.1 1 10 100ms Is DC 100 Single pulse Duty factor = t / T Peak Tj=PDM x R ja + Ta R ja=270C / W 0.01 0.1 1 10 100 1000 0.001 0.0001 0.001 Fig 9. Maximum Safe Operation Area VDS 90% VDS , Drain-to-Source Voltage(V) Fig 10. Effective Transient Thermal Impedance VG QG QGS QGD t, Pulse Width(s) 4.5V 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Circuit Fig.12 Gate Charge Waveform WEITRON http://www.weitron.com.tw 5/6 13-May-05 WTC2306A SOT-23 Outline Dimension SOT-23 A TOP VIEW D E G H B C K J L M Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 WEITRON http://www.weitron.com.tw 6/6 13-May-05 |
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