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FFP08H60S Hyperfast Recovery Power Rectifier FFP08H60S Hyperfast Recovery Power Rectifier Features * High Speed Switching * High Reverse Voltage and High Reliability * Avalanche Energy Rated * Low Forward Voltage Applications * General Purpose * Switching Mode Power Supply * Free-wheeling diode for motor application * Power switching circuits TO-220-2L Marking:08H60S 1 1. Cathode 2 2. Anode 1. Cathode 2. Anode (per diode) Ta = 25C unless otherwise noted Absolute Maximum Ratings Symbol VRRM VRWM VR IF(AV) IFSM TJ, TSTG Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature = 25C unless otherwise noted Value 600 600 600 @ TC = 120C 8 60 - 65 to +150 Units V V V A A C Thermal Characteristics T Symbol RJC a Parameter Maximum Thermal Resistance, Junction to Case Max 2.5 Units C/W Package Marking and Ordering Information Device Marking F08H60S Device FFP08H60STU Package TO-220AC Reel Size - Tape Width - Quantity 50 (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FFP08H60S Rev. A FFP08H60S Hyperfast Recovery Power Rectifier Electrical Characteristics Symbol VFM IRM trr ta tb Qrr WAVL * (per diode) Ta = 25C unless otherwise noted Parameter IF = 8A IF = 8A VR = 600V VR = 600V IF =1A, di/dt = 100A/s, VCC = 30V IF =8A, di/dt = 100A/s, VCC = 390V IF =8A, di/dt = 100A/s, VCC = 390V TC = 25 C TC = 100 C TC = 25 C TC = 100 C TC = 25 C TC = 25 C TC = 25 C TC = 25 C TC = 25 C Min. 20 Typ. 15 16 18.6 - Max. 2.1 1.7 100 500 35 45 - Units V V A A ns ns ns ns nC mJ * Avalanche Energy (L = 40mH) * Pulse Test: Pulse Width=300s, Duty Cycle=2% Test Circuit and Waveforms FFP08H60S Rev. A 2 www.fairchildsemi.com FFP08H60S Hyperfast Recovery Power Rectifier Typical Performance Characteristics Figure 1. Typical Forward Voltage Drop 100 Figure 2. Typical Reverse Current 100 FPRWARD CURRENT, IF [A] TC=100 C 10 o REVERSE CURRENT, IR [A] 10 TC=125 C 1 o TC=150 C 1 o TC=25 C o 0.1 TC=25 C 0.01 o 0.1 0 1 2 3 4 5 1E-3 0 100 200 300 400 500 600 FORWARD VOLTAGE, VF [V] REVERSE VOLTAGE, VR [V] Figure 3. Typical Junction Capacitance 80 Figure 4. Typical Reverse Recovery Time 100 JUNCTION CAPACITANCE, CJ [pF] REVERSE RECOVERY TIME, trr [ns] f=1MHz 60 90 80 70 60 50 40 30 20 10 100 IF=8A 40 TC=125 C o 20 TC=25 C o 0 1 10 100 200 300 400 500 600 REVERSE VOLTAGE, VR [V] di/dt [A/s] Figure 5. Typical Reverse Recovery Current 14 Figure 6. Forward Current Deration Curve AVERAGE RECTIFIED FOREARD CURRENT, IF(AV) [A] 10 REVERSE RECOVERY CURRENT, Irr [A] IF=8A 12 10 8 6 4 2 0 100 8 DC 6 TC=125 C o 4 TC=25 C o 2 200 300 400 500 600 di/dt [A/s] 0 100 110 120 130 o 140 150 CASE TEMPERATURE, TC [ C] FFP08H60S Rev. A 3 www.fairchildsemi.com Package Demensions FFP08H60S Hyperfast Recovery Power Rectifier TO-220AC Dimensions in Millimeters TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I18 |
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