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SLA5081 Absolute maximum ratings Symbol VDSS VGSS ID ID (pulse)*1 EAS*2 PT FET 1 150 7 15 100 N-channel General purpose External dimensions A (Ta=25C) *** SLA (15-pin) Ratings FET 2 +20, -10 Unit V V A A mJ W W C/W C/W Vrms C C 5 (Ta=25C, with all circuits operating, without heatsink) 47 (Tc=25C, with all circuits operating, with infinite heatsink) j-a j-c VISO Tch Tstg 25 (Junction-Air, Ta=25C, with all circuits operating) 2.66 (Junction-Case, Tc=25C, with all circuits operating) 1000 (Between fin and lead pin, AC) 150 -40 to +150 *1 : PW100s, duty1% *2 : VDD=25V, L=3.4mH, ID=7A, unclamped, RG=50, see Fig. E on page 15. sEquivalent circuit diagram 3 FET1 2 FET2 7 8 10 FET2 9 12 FET2 11 14 FET2 13 1 15 Pins 4, 5, 6 : NC Characteristic curves ID-VDS Characteristics (Typical) FET 1 7 10V 3.0V 2.6V ID-VGS Characteristics (Typical) FET 2 FET 1 7 7 10V 4V 6 5 6 5 6 2.8V 5 ID (A) ID (A) 4 3 2 2.4V 4 3 2.6V ID (A) 4 3 2 2 2.2V 2.4V 1 VGS=2.0V 0 0 2 4 6 8 10 0 0 2 4 6 8 10 0 0 1 2 -40 VGS=2.2V C 1 1 TC=1 25C 25C 3 4 VDS (V) VDS (V) VGS (V) RDS(ON)-ID Characteristics (Typical) FET 1 100 200 4V FET 2 7 6 FET 2 (VDS=10V) 90 (ON) (m) VGS=10V 4V 150 (ON) (m) 5 ID (A) 80 VGS=10V 4 3 2 125 C 25 C 100 RDS 70 RDS 50 50 0 1 2 3 4 5 6 7 0 0 1 2 3 4 5 6 7 0 0 1 2 3 4 ID (A) ID (A) VGS (V) RDS(ON)-TC Characteristics (Typical) 200 FET 1 (ID=3.5A) 500 FET 2 (ID=3.5A) 400 (ON) (m) (ON) (m) 4V S= 100 V 10 300 4V VG VG S= V 10 RDS RDS 200 100 0 -40 0 50 100 150 0 -40 0 50 100 150 TC (C) TC (C) 102 Tc= 1 -40C 60 SLA5081 Electrical characteristics FET 1 Symbol min V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss Crss td (on) tr td (off) tf VSD trr 1.0 7 12 80 85 1600 380 90 35 70 125 90 1.0 320 1.5 105 115 150 100 100 2.0 Specification typ max Unit V nA Conditions ID=100A, VGS=0V VGS=20V, -10V VDS=150V, VGS=0V VDS=10V, ID=250A VDS=10V, ID=3.5A VGS=10V, ID=3.5A VGS=4V, ID=3.5A VDS=10V, f=1.0MHz, VGS=0V ID=3.5A, VDD 70V, RL=20, VGS=5V, see Fig.3 on page 16. ISD=7A, VGS=0V IF=100mA 1.0 4 9 150 170 870 320 210 25 55 80 50 1.0 500 1.5 200 230 Specification min 150 100 100 2.0 typ max FET 2 Unit V nA Conditions ID=100A, VGS=0V VGS=20V, -10V VDS=150V, VGS=0V VDS=10V, ID=250A VDS=10V, ID=3.5A VGS=10V, ID=3.5A VGS=4V, ID=3.5A VDS=10V f=1.0MHz VGS=0V ID=3.5A VDD 70V RL=20 VGS=5V, see Fig.3 on page 16. ISD=7A, VGS=0V IF=100mA (Ta=25C) A V S m m pF pF pF ns ns ns ns V ns A V S m m pF pF pF ns ns ns ns V ns Characteristic curves Re(yfs)-ID Characteristics (Typical) FET 1 100 Safe Operating Area (SOA) FET 2 FET 1 (VDS=10V) 20 10 ID (pulse) MAX (VDS=10V) 20 (TC=25C) 10 0 s 10 m s( 1s ho t) 1m s 10 Re (yfs) (S) 10 T - C= Re (yfs) (S) 40 C C 25 C 125 5 =- TC C 40 5 C 5 RDS (on) LIMITED 12 1 25C ID (A) 0.5 1 1 0.1 0.05 1-Circuit Operation 0.5 0.1 0.05 0.1 1 7 ID (A) 0.3 0.05 0.1 0.5 1 5 7 0.01 0.5 1 5 10 50 100 200 ID (A) VDS (V) Capacitance-VDS Characteristics (Typical) FET 1 10000 VGS=0V f=1MHz FET 2 5000 VGS=0V f=1MHz FET 2 20 10 5 ID (pulse) MAX (TC=25C) 10 1m 10 m s( 1s s 0 s Capacitance (pF) Capacitance (pF) RDS (on) LIMITED Ciss 1000 ho t) 1000 500 ID (A) Ciss 0.5 Coss Crss 0.1 1-Circuit Operation 100 50 40 Coss Crss 0.05 100 50 0.01 0.5 0 10 20 30 40 50 0 10 20 30 40 50 1 5 10 50 100 200 VDS (V) VDS (V) VDS (V) IDR-VSD Characteristics (Typical) 7 PT-Ta Characteristics FET 2 50 FET 1 7 6 All Circuits Operating 6 5 10V 40 5 IDR (A) IDR (A) 10 V VGS=0V PT (W) 4 3 2 1 4V 4 4V 30 ith W In ite fin 3 2 1 20 VGS=0V He s at k in 10 Without Heatsink 0 0 0.5 1.0 1.5 0 0 0.5 1.0 1.5 0 0 50 100 150 VSD (V) VSD (V) Ta (C) 103 |
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