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| Ordering number : ENA0391 2SK3977 SANYO Semiconductors DATA SHEET 2SK3977 Features * * * N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4.5V drive Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C Conditions Ratings 100 20 10 40 1 20 150 --55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0V VDS=100V, VGS=0V VGS=16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=6A ID=6A, VGS=10V ID=6A, VGS=4.5V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min 100 1 10 1.2 6 10 70 85 1560 130 83 16 55 120 80 92 120 2.6 typ max Unit V A A V S m m pF pF pF ns ns ns ns Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1506PA TI IM TC-00000323 No. A0391-1/4 2SK3977 Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=50V, VGS=10V, ID=10A VDS=50V, VGS=10V, ID=10A VDS=50V, VGS=10V, ID=10A IS=10A, VGS=0V Ratings min typ 34 5.5 6 0.95 1.2 max Unit nC nC nC V Package Dimensions unit : mm (typ) 7518-004 6.5 5.0 2.3 1.5 Package Dimensions unit : mm (typ) 7003-004 0.5 4 4 7.0 1.5 6.5 5.0 2.3 0.5 5.5 5.5 7.0 0.8 1.6 7.5 1 0.5 0.6 2 0.8 1.2 3 0 to 0.2 1.2 0.6 2.5 0.85 0.7 0.85 0.5 1.2 1 2 3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA 2.3 2.3 Switching Time Test Circuit VDD=50V 10V 0V VIN ID=6A RL=8.33 VIN PW=10s D.C.1% D G VOUT P.G 50 S 2SK3977 8.0V 4.0 3.5 3.0 ID -- VDS 6.0V 3.0V 8 ID -- VGS VDS=10V 7 6 5 4 3 Drain Current, ID -- A 2.5 2.0 1.5 1.0 0.5 0 0 Drain Current, ID -- A 10.0V 4.0V Ta=7 5C 0 0.5 1.0 1.5 2.0 2.5 VGS=2.5V 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 25 C 2 --25 C 3.0 3.5 IT10021 Drain-to-Source Voltage, VDS -- V IT10020 Gate-to-Source Voltage, VGS -- V No. A0391-2/4 2SK3977 200 RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- m Ta=25C ID=6A 200 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- m 150 150 100 100 6A I D= 4V, = V GS 6A I D= 0V, =1 V GS 50 50 0 0 2 4 6 8 10 12 14 16 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 3 IT10954 10 7 5 3 2 Ambient Temperature, Ta -- C IT10955 yfs -- ID IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S 2 10 5 3 2 1.0 7 5 3 2 0.1 0.01 VDS=10V = Ta 5 --2 C Source Current, IS -- A 7 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0 0.2 25C 7 0.001 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 5 3 2 5 7 10 IT10024 5 0.4 0.6 --25C 0.8 C 5 Ta=7 5C 2 C 5 1.0 1.2 IT10025 SW Time -- ID Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V VDD=50V VGS=10V 3 2 Switching Time, SW Time -- ns Ciss Ciss, Coss, Crss -- pF td(off) 1000 7 5 3 2 100 7 5 3 2 tf Coss 100 7 5 3 2 tr td(on) Crss 10 0.1 2 3 5 7 1.0 2 3 5 7 0 10 20 30 40 50 60 IT10027 Drain Current, ID -- A 10 9 IT10026 7 5 3 2 Drain-to-Source Voltage, VDS -- V VGS -- Qg VDS=50V ID=10A ASO IDP=40A PW10s Gate-to-Source Voltage, VGS -- V 0 10 8 s Drain Current, ID -- A 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 IT10956 10 7 5 3 2 1.0 7 5 3 2 ID=10A D 1m s C 10 op er at io 10 0m s m s Operation in this area is limited by RDS(on). Tc=25C Single pulse 2 3 5 7 1.0 2 3 n (T c= 25 C ) 0.1 0.1 5 7 10 2 3 Total Gate Charge, Qg -- nC Drain-to-Source Voltage, VDS -- V 5 7 100 2 IT10957 No. A0391-3/4 2SK3977 1.2 PD -- Ta Allowable Power Dissipation, PD -- W 25 PD -- Tc Allowable Power Dissipation, PD -- W 1.0 20 0.8 0.6 No he at sin k 15 10 0.4 0.2 5 0 0 20 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT10958 Case Temperature, Tc -- C IT10959 Note on usage : Since the 2SK3977 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2006. Specifications and information herein are subject to change without notice. PS No. A0391-4/4 |
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