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| SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 1 - APRIL 1998 FEATURES * BVDSS=60V * RDS(ON) = 0.33 * Repetitive Avalanche Rating APPLICATIONS * DC - DC Converters * Solenoids/Relay Drivers for Automotive * Stepper Motor Drivers PARTMARKING DETAIL ZVN4306V ZVN4306GV D S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25C Avalanche Current-Repetitive Avalanche Energy-Repetitive Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot I AR E AR T j:T stg VALUE 60 2.1 15 20 3 1 25 -55 to +150 UNIT V A A V W A mJ C ZVN4306GV ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS I D(on) R DS(on) 12 0.22 0.32 0.7 350 140 0.33 0.45 60 1.3 3 20 10 100 TYP. MAX. UNIT CONDITIONS. V V nA A A A S pF pF V DS=25 V, V GS=0V, f=1MHz I D=1mA, V GS=0V I D =1mA, V DS= V GS V GS= 20V, V DS=0V V DS=60V, V GS=0V V DS=48V, V GS=0V, T=125C(2) V DS=10V, V GS=10V V GS=10V, I D=3A V GS=5V, I D=1.5A V DS=25V,I D=3A g fs Forward Transconductance (1) Input Capacitance (2) C iss Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) C oss C rss t d(on) tr t d(off) tf 30 8 25 30 16 pF ns ns ns ns V DD 25V, V GEN=10V, I D=3A (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device ZVN4306GV TYPICAL CHARACTERISTICS 12 11 7V 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 RDS(on)-Drain Source On Resistance () VGS= 20V 12V 10V 9V 8V VGS=3V 10 3.5V 5V 6V ID - Drain Current (Amps) 6V 1.0 5V 8V 10V 4V 3.5V 3V 10 0.1 0.1 1 10 100 VDS - Drain Source Voltage (Volts) ID-Drain Current (Amps) Saturation Characteristics On-resistance v drain current 2.6 Normalised RDS(on) and VGS(th) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -S ain Dr ist es eR rc ou ce an RD ) on S( 5 gfs-Transconductance (S) VGS=10V ID=3A 4 3 2 1 VDS=10V VGS=VDS ID=1mA Gate Threshold Voltage VGS(TH) -50 -25 0 25 50 75 100 125 150 175 200 225 0 0 2 4 6 8 10 12 14 16 18 20 Tj-Junction Temperature (C) ID(on)- Drain Current (Amps) Normalised RDS(on) and VGS(th) v Temperature Transconductance v drain current 500 16 VGS-Gate Source Voltage (Volts) 14 12 10 8 6 4 2 0 01 ID=3A VDD= 20V 40V 60V C-Capacitance (pF) 400 300 200 100 0 0 10 20 30 40 50 Ciss Coss Crss 60 70 80 2 3 4 5 6 7 8 9 10 11 12 VDS-Drain Source Voltage (Volts) Q-Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage ZVN4306GV |
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