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| Ordering number : ENA0269 2SA2186 2SA2186 Applications * PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features * * * * Adoption of MBIT processes. High current capacity. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions Ratings -50 -50 --6 --2 --4 --400 0.9 150 --55 to +150 Unit V V V A A mA W C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitterr Saturation Voltage Symbol ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) VBE(sat) Conditions VCB=-40V, IE=0A VEB=-4V, IC=0A VCE=-2V, IC=--100mA VCE=-2V, IC=--1.5A VCE=-10V, IC=--300mA VCB=-10V, f=1MHz IC=--1A, IB=--50mA IC=--1A, IB=--50mA Ratings min typ max --1 --1 200 40 420 16 --0.22 --0.9 --0.43 --1.2 MHz pF V V 560 Unit A A Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2805EA MS IM TB-00001911 No. A0269-1/4 2SA2186 Continued from preceding page. Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=--10A, IE=0A IC=--1mA, RBE= IE=--10A, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min --50 --50 --6 35 200 24 typ max Unit V V V ns ns ns Package Dimensions unit : mm 7519-003 6.9 1.45 2.5 1.0 Switching Time Test Circuit PW=20s D.C.1% INPUT IB1 IB2 VR 50 RB IC OUTPUT RL + 470F VCC= --25V 4.5 1.0 1.0 + 100F 1.0 0.6 0.5 4.0 VBE=5V 0.9 1 2 3 0.45 IC=10IB1= --10IB2= --0.7A 2.54 2.54 1 : Emitter 2 : Collector 3 : Base SANYO : NMP --2.0 --1.8 IC -- VCE A 0m --2.0 IC -- VBE VCE= --2V --50 mA --30 mA --20m A --1.8 Collector Current, IC -- A --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --10mA --8mA Collector Current, IC -- A --1.6 --4 --1.6 --1.4 --1.2 --1.0 --0.8 --6mA --4mA --2mA Ta= 75 --0.2 --0.4 --0.6 C 25C --0.4 --0.2 IB=0mA --1.6 --1.8 --2.0 0 0 --0.8 --25 --1.0 --0.6 C --1.2 IT10527 Collector-to-Emitter Voltage, VCE -- V 1000 7 5 IT10526 1000 Base-to-Emitter Voltage, VBE -- V hFE -- IC f T -- IC VCE= --2V Ta=75C 25C VCE= --10V Gain-Bandwidth Product, f T -- MHz 7 --0.1 2 3 5 7 --1.0 2 3 7 5 DC Current Gain, hFE 3 2 --25C 3 2 100 7 5 3 --0.01 100 7 5 --0.01 2 3 5 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A IT10528 Collector Current, IC -- A IT10529 No. A0269-2/4 2SA2186 100 7 Cob -- VCB f=1MHz Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 7 5 VCE(sat) -- IC IC / IB=10 Output Capacitance, Cob -- pF 5 3 2 3 2 --0.1 7 5 3 2 = Ta C 75 --2 C 5 10 7 5 --0.1 C 25 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector-to-Base Voltage, VCB -- V --1.0 7 IT10530 3 VCE(sat) -- IC Collector Current, IC -- A IT10531 VBE(sat) -- IC IC / IB=20 Base-to-Emitter Saturation Voltage, VBE(sat) -- V IC / IB=10 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 3 2 --0.1 7 5 3 2 --1.0 = Ta C 75 --2 C Ta= --25C 75C C 25 C 5 7 25 5 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 3 IT10532 7 5 3 Collector Current, IC -- A IT10533 VBE(sat) -- IC ASO ICP= --4A IC= --2A 10 10 IC / IB=20 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 <10s 50 ms 10 s 0 2 Collector Current, IC -- A 0 s --1.0 7 5 3 2 --0.1 7 5 3 2 0m s 1m s DC --1.0 Ta= --25C 75C op era tio n 7 25C 5 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 --0.01 --0.1 Ta=25C Single Pulse 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 Collector Current, IC -- A 1.0 0.9 IT10534 PC -- Ta Collector-to-Emitter Voltage, VCE -- V IT10535 Collector Dissipation, PC -- W 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT10525 No. A0269-3/4 2SA2186 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2005. Specifications and information herein are subject to change without notice. PS No. A0269-4/4 |
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