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| 7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 APPLICATIONS: * * 2N3720 * High-Speed Switching Medium-Current Switching High-Frequency Amplifiers FEATURES: * Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60 Vdc (Min) - 2N3720 DC Current Gain: hFE = 25-180 @ IC = 1.0 Adc Low Collector-Emitter Saturation Voltage: VCE(sat) = 0.75 Vdc @ IC = 1.0 Adc High Current-Gain - Bandwidth Product: fT = 90 MHz (Typ) * Silicon PNP Power Transistors * * DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life. TO-5 VALUE 60 60 4.0 10 3.0 0.5 -65 to 200 -65 to 200 6.0 34.3 1.0 5.71 29 175 ABSOLUTE MAXIMUM RATINGS: MAXIMUM SYMBOL VCEO* VCB* VEB* IC* IC* IB* T STG* T J* PD* PD* CHARACTERISTIC Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Peak Collector Current Continuous Collector Current Base Current Storage Temperature Operating Junction Temperature Total Device Dissipation TC = 25 C Derate above 25 C Total Device Dissipation T A = 25 C Derate above 25 C Thermal Resistance Junction to Case Junction to Ambient UNITS Vdc Vdc Vdc Adc Adc Adc C C Watts mW/ C Watts mW/ C C/W C/W JC * Indicates JEDEC registered Data. MSC1027.PDF 02-24-99 2N3720 ELECTRICAL CHARACTERISTICS: (25 Case Temperature Unless Otherwise Noted) SYMBOL VCEO(sus)* ICEX* ICBO* IEBO* hFE* CHARACTERISTIC Collector-Emitter Sustaining Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain (Note 1) TEST CONDITIONS IC = 20 mAdc, IB = 0 (Note 1) VCE = 60 Vdc, VBE(off) = 2.0 Vdc VCE = 60 Vdc, VBE(off) = 2.0 Vdc, TC = 150 C VCB = 60 Vdc, IE = 0 VBE = 4.0 Vdc, IC = 0 IC = 500 mAdc, VCE = 1.5 Vdc IC = 1.0 Adc, VCE = 1.5 Vdc IC = 1.0 Adc, VCE = 1.5 Vdc, TC = VALUE Min. Max. 60 ------------20 25 ---10 1.0 10 1.0 ---180 ---0.75 1.5 1.5 2.3 ---- Units Vdc Adc mAdc Adc mAdc ---------Vdc Vdc Vdc Vdc MHz - 40 C 15 ------------60 VCE(sat)* VBE(sat)* fT* Cob* Cib* ton* toff* Collector-Emitter Saturation Voltage (Note 1) Base-Emitter Saturation Voltage (Note 1) Current-Gain Bandwidth Product (Note 2) Output Capacitance Input Capacitance Turn-on Time Turn-off Time - 40 C to + 100 C IC = 3.0 Adc, IB = 300 mAdc, TC = - 40 C to + 100 C IC = 1.0 Adc, IB = 100 mAdc, TC = IC = 1.0 Adc, IB = 100 mAdc, TC = IC = 3.0 Adc, IB = 300 mAdc, TC = - 40 C to + 100 C - 40 C to + 100 C IC = 500 mAdc, VCE = 10 Vdc, ftest = 30 MHz VCB = 10 Vdc, IE = 0, f = 0.1 MHz VEB = 0.5 Vdc, IC = 0, f = 0.1 MHz VCC = 12 Vdc, VBE(off) = 0, IC = 1.0 Adc, IB1 = 0.1 Adc VCC = 12 Vdc, IC = 1.0 Adc, IB1 = IB2 = 100 mAdc ------------- 120 1000 100 400 pF pF ns ns Note 1: Pulse Test: Pulse width 300S, Duty Cycle = 2.0%. Note 2: fT = | hfe | * ftest * Indicates JEDEC registered data MSC1027.PDF 02-24-99 2N3720 PACKAGE MECHANICAL DATA: 1.500 [38.10] MIN .031 [.787] .240 [6.09] .260 [6.60] .010 [.254] .030 [.762] 45 . 029 [.736] .045 [1.14] .200 [5.08] O.305 [7.75] O.335 [8.51] .100 [2.54] O.017 +.002 [.432] [.025] -.001 [+.051] .100 [2.54] O.335 [8.51] O.370 [9.40] NOTE: DIMENSIONS IN [ ] = MILLIMETERS MSC1027.PDF 02-24-99 |
Price & Availability of 2N3720
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