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| DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2650T1E DUAL N-CHANNEL MOSFET FOR SWITCHING DESCRIPTION The PA2650T1E is a switching device, which can be driven directly by a 4.5 V power source. The PA2650T1E contains dual MOSFET which features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as DC/DC converter of portable machine and so on. PIN CONNECTION (Top View) 6 MOSFET1 2 5 1 3 4 MOSFET2 FEATURES * 4.5 V drive available MOSFET * Low on-state resistance MOSFET MOSFET1 RDS(on)1 = 48 m TYP. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 55 m TYP. (VGS = 4.5 V, ID = 3.0 A) MOSFET2 RDS(on)1 = 50 m TYP. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 57 m TYP. (VGS = 4.5 V, ID = 3.0 A) 1: Gate1 2: Drain1/Source2 (Heat sink2) 3: Gate2 4: Drain2 (Heat sink1) 5: Drain1/Source2 (Heat sink2) 6: Source1 ORDERING INFORMATION PART NUMBER PACKAGE 6LD3x3MLP PA2650T1E Marking: A2650 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with caution for electrostatic discharge. VESD = 150 V TYP. (C = 200 pF, R = 0 , Single Pulse) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G18749EJ1V0DS00 (1st edition) Date Published May 2007 NS CP(K) Printed in Japan 2007 PA2650T1E ABSOLUTE MAXIMUM RATINGS (TA = 25C) MOSFET1, MOSFET2 Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Note1 Note2 Note1 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 20 12 3.8 15.2 1.1 150 -55 to +150 V V A A W C C Drain Current (pulse) Total Power Dissipation Channel Temperature Storage Temperature Notes 1. Mounted on a 1 in pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick FR-4 board 2 2 (Cu pad: 322 mm x 70 m, FR-4: 1452 mm x 1.6 mmt) 2. PW 10 s, Duty Cycle 1% 2 FET side: 97C/W when mounted on a 1 in pad of 2 oz copper 2 2 Data Sheet G18749EJ1V0DS PA2650T1E ELECTRICAL CHARACTERISTICS (TA = 25C) MOSFET1, MOSFET2 CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(th) | yfs | RDS(on)1 TEST CONDITIONS VDS = 20 V, VGS = 0 V VGS = 12 V, VDS = 0 V VDS = VGS, ID = 0.25 mA VDS = 10 V, ID = 1.5 A VGS = 10 V, ID = 3.0 A MOSFET1 MOSFET2 MOSFET1 MOSFET2 MIN. TYP. MAX. 1 10 UNIT A A V S 0.6 1.0 3.6 48 50 55 57 220 100 40 8.4 7.3 15 3.4 2.0 Drain to Source On-state Resistance 65 65 75 75 m m m m pF pF pF ns ns ns ns nC nC nC V RDS(on)2 VGS = 4.5 V, ID = 3.0 A Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Note Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) VDS = 10 V, VGS = 0 V, f = 1.0 MHz VDD = 10 V, ID = 1.5 A, VGS = 4.5 V, RG = 10 VDD = 16 V, VGS = 4.5 V, ID = 3.0 A IF = 3.0 A, VGS = 0 V 2.9 0.6 1.0 0.89 Note Pulsed: PW 350 s, Duty Cycle 2% TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. RL PG. RG VDD ID VGS 0 = 1 s Duty Cycle 1% ID Wave Form VGS VGS Wave Form 0 10% 90% VGS 90% D.U.T. IG = 2 mA 50 RL VDD 90% PG. ID 0 10% 10% td(on) ton tr td(off) toff tf Data Sheet G18749EJ1V0DS 3 PA2650T1E MOSFET TYPICAL CHARACTERISTICS (TA = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 1.6 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Mounted on FR-4 board of 1452 mm2 x 1.6 mmt 1.2 dT - Percentage of Rated Power - % 100 80 60 40 20 0 0 25 50 75 100 125 150 175 PT - Total Power Dissipation - W 0.8 0.4 0 0 25 50 75 100 125 150 175 TA - Ambient Temperature - C TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA 100 d it e Lim V ) .5 =4 ID(pulse) PW =1 i ID - Drain Current - A 10 R (o DS n) S G (V m i s 1i 0 1 m i ID(DC) DC s 0.1 Single Pulse Mounted on FR-4 board of 1452 mm2 x 1.6 mmt 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - C/W 1000 100 10 1 0.1 100 MOSFET1, 2 Single Pulse 2 Mounted on FR-4 board of 1452 mm x 1.6 mmt 2 2 Cu pad of 645 mm x 70 m (1 in ) 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s 4 Data Sheet G18749EJ1V0DS PA2650T1E DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 15 VGS = 10 V ID - Drain Current - A ID - Drain Current - A 100 10 4.5 V 10 TA = -25C 25C 75C 125C 1 2.5 V 5 0.1 VDS = 10 V Pulsed 0.01 Pulsed 0 0 0.5 VDS - Drain to Source Voltage - V 1 0 0.5 1 1.5 2 2.5 3 VGS - Gate to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE VGS(th) - Gate to Source Threshold Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S 10 TA = -25C 25C 75C 125C 1 1.5 VDS = VGS ID = 0.25 mA 1 0.5 VDS = 10 V Pulsed 0.1 0.01 0.1 1 10 0 -50 -25 0 25 50 75 100 125 150 Tch - Channel Temperature - C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - m 100 80 60 40 20 0 0.01 4.5 V 10 V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - m 100 80 60 40 20 0 0.01 4.5 V 10 V MOSFET1 Pulsed 0.1 1 10 100 MOSFET2 Pulsed 0.1 1 10 100 ID - Drain Current - A ID - Drain Current - A Data Sheet G18749EJ1V0DS 5 PA2650T1E DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - m RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 140 120 100 80 1.5 A 60 40 20 0 0 2 4 6 8 10 VGS - Gate to Source Voltage - V 140 120 100 80 60 40 20 0 0 2 4 6 8 10 VGS - Gate to Source Voltage - V ID = 3.0 A ID = 3.0 A 1.5 A MOSFET1 Pulsed MOSFET2 Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - m RDS(on) - Drain to Source On-state Resistance - m 140 120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 150 VGS = 4.5 V DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 140 120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 150 MOSFET2 ID = 3.0 A Pulsed 10 V VGS = 4.5 V 10 V MOSFET1 ID = 3.0 A Pulsed Tch - Channel Temperature - C Tch - Channel Temperature - C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS 1000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 100 VDD = 10 V VGS = 4.5 V RG = 10 td(off) 10 td(on) tr tf Ciss 100 Coss Crss VGS = 0 V f = 1.0 MHz 10 0.01 1 0.1 1 10 100 0.1 1 10 100 VDS - Drain to Source Voltage - V ID - Drain Current - A 6 Data Sheet G18749EJ1V0DS PA2650T1E SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 DYNAMIC INPUT CHARACTERISTICS 6 VGS - Gate to Source Voltage - V MOSFET1, 2 VGS = 0 V Pulsed IF - Diode Forward Current - A 10 4 VDD = 16 V 10 V 4V 1 2 0.1 ID = 3.0 A 0 0 0.5 1 1.5 2 2.5 3 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VF(S-D) - Source to Drain Voltage - V QG - Gate Charge - nC Data Sheet G18749EJ1V0DS 7 PA2650T1E PACKAGE DRAWING (Unit: mm) 3 AB 0.2 RFE 3 0.02 -0.02 +0.03 2x 0.15 C 0.15 C 2 x C 0.9 0.1 0.4 0.05 0.2 MIN. 0.1 1.1 0.05 0.95 6 1 0.4 0.95 5 0.75 2 PIN CONNECTION 1: Gate1 2: Drain1/Source2 (Heat sink2) 3: Gate2 4: Drain2 (Heat sink1) 5: Drain1/Source2 (Heat sink2) 6: Source1 4 0.4 0.05 3 Heat sink 1 1.6 0.05 8 Data Sheet G18749EJ1V0DS 6x 0.08 C 0.1 C Heat sink 2 PA2650T1E * The information in this document is current as of May, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1 |
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