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| 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP11 SST11LP114.9-5.8 GHz High-Linearity Power Amplifier Preliminary Specifications FEATURES: * Gain: - ~24 dB gain across the 4.9-5.8 GHz band * High linear output power: - ~25 dBm P1dB - EVM~4% at 18 dBm over 4.9-5.8 GHz for 64 QAM/54 Mbps operation - ACPR below IEEE 802.11a Mask up to 21 dBm across full band * Low idle current - ~80 mA ICQ * Low shut-down current (< 1 A) * 20 dB dynamic range on-chip differential linear power detection * Simple RF matching circuits * Packages available - 16-contact VQFN (3mm x 3mm) - Non-Pb (lead-free) packages available APPLICATIONS: * * * * WLAN (IEEE 802.11a) Japan WLAN HyperLAN2 Multimedia PRODUCT DESCRIPTION The SST11LP11 is a high-performance power amplifier IC based on the highly-reliable InGaP/GaAs HBT technology. The SST11LP11 is designed to operate over the entire WLAN 802.11a band between 4.9-5.8 GHz frequency band for the U.S., European, and Japanese markets while achieving highly-linear power and low EVM. The SST11LP11 power amplifier IC features easy boardlevel usage along with on-chip linear power detection and power-down control. These features coupled with low current draw at maximum linear power make the SST11LP11 ideal for battery-powered 802.11a WLAN transmitter applications. The SST11LP11 is offered in 16-contact VQFN package. See Figure 1 for pin assignments and Table 1 for pin descriptions. (c)2005 SST Communications Corp. S71284-00-000 1/05 1 The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice. 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP11 Preliminary Specifications FUNCTIONAL BLOCKS FUNCTIONAL BLOCK DIAGRAM VCC1 VCC2 VCC3 14 16 NC RFIN RFIN VCCb 1 2 3 4 5 VREF1 15 13 12 NC 11 RFOUT 10 RFOUT Bias Circuit 6 VREF2 7 VREF3 8 Det_ref NC 9 Det 1284 B1.1 (c)2005 SST Communications Corp. S71284-00-000 1/05 2 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP11 Preliminary Specifications PIN ASSIGNMENTS VCC1 VCC2 VCC3 14 16 NC RFIN RFIN VCCb 1 2 3 4 15 NC 13 12 NC 11 RFOUT 10 RFOUT 9 Det 8 Det_ref 1284 16-vqfn P1.1 Top View (contacts facing down) RF and DC GND 0 5 VREF1 6 VREF2 7 VREF3 FIGURE 1: PIN ASSIGNMENTS FOR 16-CONTACT VQFN PIN DESCRIPTIONS TABLE 1: PIN DESCRIPTION Symbol GND NC RFIN RFIN VCCb VREF1 VREF2 VREF3 Det_ref Det RFOUT RFOUT NC NC VCC3 VCC2 VCC1 Pin No. 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 No Connection No Connection Power Supply Power Supply Power Supply PWR PWR PWR Power Supply Pin Name Ground No Connection I I PWR PWR PWR PWR O O O O Type1 Function The center pad should be connected to RF ground with several low inductance, low resistance vias. Unconnected pins. RF input, DC decoupled RF input, DC decoupled Supply voltage for bias circuit 1st stage idle current control 2nd stage idle current control 3rd stage idle current control On-chip power detector reference On-chip power detector RF output RF output Unconnected pins. Unconnected pins. Power supply, 3rd stage Power supply, 2nd stage Power supply, 1st stage T1.0 1284 1. I=Input, O=Output (c)2005 SST Communications Corp. 3 S71284-00-000 1/05 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP11 Preliminary Specifications ELECTRICAL SPECIFICATIONS The AC and DC specifications for the power amplifier interface signals. Refer to Table 2 for the DC voltage and current specifications. Refer to Figures 2 through 11 for the RF performance. Absolute Maximum Stress Ratings (Applied conditions greater than those listed under "Absolute Maximum Stress Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Supply Voltage to pins 4, 14, 15, 16 (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +5.5V DC supply current (ICC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +85C Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +120C Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Surface Mount Solder Reflow Temperature: . . . . . . . . . . . . . . . . . . . . . . . . . "with-Pb" units1: 240C for 3 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "non-Pb" units: 260C for 3 seconds 1. Certain "with-Pb" package types are capable of 260C for 3 seconds; please consult the factory for the latest information. OPERATING RANGE Range Industrial Ambient Temp -40C to +85C VCC 3.3V TABLE 2: DC ELECTRICAL CHARACTERISTICS Symbol VCC ICC Det Det_ref ICQ IOFF VREG1,2,3 Parameter Supply Voltage at pins 4, 14, 15, 16 Supply Current @ POUT=21 dBm VCC=3.3V Power detector output voltage Power detector output reference Idle current Shut down current Reference Voltages for typical applications 2.90 0.6 0.6 80 <1.0 Min. 2.7 Typ 3.3 Max. 4.2 260 2.2 Unit V mA V V mA A V T2.0 1284 Test Conditions 802.11a modulation -10 to +22 dBm TABLE 3: AC ELECTRICAL CHARACTERISTICS FOR CONFIGURATION Symbol FL-U POUT G S GVAR1 2f, 3f, 4f, 5f Parameter Frequency range Output power @ PIN = -6 dBm for OFDM signal Small signal gain Power detector sensitivity Gain variation over band (4900~5855 MHz) Harmonics at 21 dBm Min. 4.9 18 24 0.04 1.75 -40 Typ Max. 5.8 Unit GHz dBm dB V/dB dB dBc T3.0 1284 (c)2005 SST Communications Corp. S71284-00-000 1/05 4 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP11 Preliminary Specifications TYPICAL PERFORMANCE CHARACTERISTICS TEST CONDITIONS: VCC = 3.3V, TA = 25C, VREG1,2,3 = 2.85V UNLESS OTHERWISE NOTED 0 0 -5 -10 -10 -20 -15 -30 -20 S12 (dB) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 S11 (dB) -40 -25 -50 -30 -60 -35 -70 -40 -80 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 Frequency (GHz) Frequency (GHz) 40 0 30 -5 20 -10 10 S21 (dB) S22 (dB) 0 -15 -10 -20 -20 -25 -30 -40 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 -30 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 Frequency (GHz) Frequency (GHz) 1284 S-Parms.0.0 FIGURE 2: S-PARAMETERS (c)2005 SST Communications Corp. S71284-00-000 1/05 5 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP11 Preliminary Specifications TWO-TONE MEASUREMENTS TEST CONDITIONS: F = 1 MHZ 30 4.92 GHz 28 5.18 GHz 5.32 GHz 5.805 GHz Power Gain (dB) 26 24 22 20 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 Output Power (dBm) FIGURE 3: POWER GAIN VERSUS POWER OUTPUT 325 275 Supply Current (mA) 225 175 1284 SCurrVsOutPwr.0.0 125 4.92 GHz 5.18 GHz 5.32 GHz 5.805 GHz 75 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 Output Power (dBm) FIGURE 4: SUPPLY CURRENT VERSUS OUTPUT POWER (c)2005 SST Communications Corp. S71284-00-000 1/05 6 1284 PGainvOutP.0.0 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP11 Preliminary Specifications -20 -25 -30 IMD3 (dBc) -35 -40 4.92 GHz -45 5.18 GHz 5.32 GHz 5.805 GHz -50 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Output Power (dBm) 23 FIGURE 5: IMD3 VERSUS OUTPUT POWER 2.0 1.9 1.8 1.7 1.6 Detector Voltage (V) 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 4.9 GHz 0.7 0.6 0.5 -2 0 2 4 6 8 10 12 14 16 5.18 GHz 5.32 GHz 5.805 GHz 18 20 22 24 Output Power (dBm) FIGURE 6: DETECTOR VOLTAGE VERSUS OUTPUT POWER (c)2005 SST Communications Corp. S71284-00-000 1/05 7 1284 DetVvsOutPwr.0.0 1284 IMD3vOutP.0.0 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP11 Preliminary Specifications OFDM SIGNAL MEASUREMENTS TEST CONDITIONS: 54 MBPS OFDM SIGNAL 10 Freq = 4.92 GHz 9 8 7 6 EVM (%) Freq = 5.18 GHz Freq = 5.32 GHz Freq = 5.805 GHz 5 4 3 1284 EVMvOutP.0.0 2 1 0 9 10 11 12 13 14 15 16 17 18 19 20 Output Power (dBm) 21 FIGURE 7: EVM VERSUS OUTPUT POWER (c)2005 SST Communications Corp. S71284-00-000 1/05 8 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP11 Preliminary Specifications FIGURE 8: SPECTRUM MASK @ POUT = 21 DBM WITH FREQUENCY = 4.92 GHZ AND ICC = 235 MA FIGURE 9: SPECTRUM MASK @ POUT = 21 DBM WITH FREQUENCY = 5.18 GHZ AND ICC = 230 MA (c)2005 SST Communications Corp. S71284-00-000 1/05 9 1284 ACPR.5.18GHz230.0.0 1284 ACPR.4.92GHz.0.0 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP11 Preliminary Specifications FIGURE 10: SPECTRUM MASK @ POUT = 21 DBM WITH FREQUENCY = 5.32 GHZ AND ICC = 220 MA FIGURE 11: SPECTRUM MASK @ POUT = 21 DBM WITH FREQUENCY = 5.805 GHZ AND ICC = 215 MA (c)2005 SST Communications Corp. S71284-00-000 1/05 10 1284 ACPR.5.805GHz.0.0 1284 ACPR.5.18GHz220.0.0 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP11 Preliminary Specifications VCC 0.1F 25 4.7pF* 0.1F* 40~60mil/10~12mil 0.1F 10F 0.1uF 16 1 15 14 13 12 50 2 11 80mil/60mil** 50 50 RFOUT 50 RFin 3 10 Bias Circuit 4 0.1 F 0.5 pF/0402 Hi-Q, typically Johanson S-series 9 5 6 91 7 42 8 10pF 42 10pF * As close as possible to package **For 8~10 mil FR4 dielectric board 100pF 100pF 100pF 1284 Schematic.0.1 VREG1 VREG2 VREG3 Det_ref Det FIGURE 12: TYPICAL SCHEMATIC FOR HIGH-POWER, HIGH-EFFICIENCY 802.11A APPLICATIONS (c)2005 SST Communications Corp. S71284-00-000 1/05 11 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP11 Preliminary Specifications PRODUCT ORDERING INFORMATION SST11LP SSTxxLP 11 xx - QVC - XXX E X Environmental Attribute E1 = non-Pb contact (lead) finish Package Modifier C = 16 contact Package Type QV = VQFN Product Family Identifier Product Type P = Power Amplifier Voltage L = 3.0-3.6V Frequency of Operation 1 = 4.9-5.8 GHz Product Line 1 = SST Communications 1. Environmental suffix "E" denotes non-Pb solder. SST non-Pb solder devices are "RoHS Compliant". Valid combinations for SST11LP11 SST11LP11-QVC SST11LP11-QVCE SST11LP11 Evaluation Kits SST11LP11-QVC-K SST11LP11-QVCE-K Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. (c)2005 SST Communications Corp. S71284-00-000 1/05 12 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP11 Preliminary Specifications PACKAGING DIAGRAMS TOP VIEW SIDE VIEW 0.2 BOTTOM VIEW See notes 2 and 3 Pin #1 1.7 Pin #1 3.00 0.10 1.7 0.076 0.05 Max 3.00 0.10 1.00 0.80 0.30 0.18 1mm 0.5 BSC 0.45 0.35 Note: 1. Complies with JEDEC JEP95 MO-220I, variant VEED except external paddle nominal dimensions. 2. From the bottom view, the pin #1 indicator may be either a 45-degree chamfer or a half-circle notch. 3. The external paddle is electrically connected to the die back-side and possibly to certain VSS leads. This paddle can be soldered to the PC board; it is suggested to connect this paddle to the VSS of the unit. Connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device. 4. Untoleranced dimensions are nominal target dimensions. 5. All linear dimensions are in millimeters (max/min). 16-vqfn-3x3-QVC-0.0 16-CONTACT VERY-THIN QUAD FLAT NO-LEAD (VQFN) SST PACKAGE CODE: QVC TABLE 4: REVISION HISTORY Revision 00 Description Date Jan 2005 * S71284: SST conversion of data sheet GP1111 (c)2005 SST Communications Corp. S71284-00-000 1/05 13 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP11 Preliminary Specifications CONTACT INFORMATION Marketing SST Communications Corp. 2951 28th Street, Ste. 2040 Santa Monica, CA 90405 Tel: 310-581-1650 x27 Fax: 310-581-1663 Sales NORTH AMERICA Silicon Storage Technology, Inc. Les Crowder Technical Sales Support - Major Accounts 1922 Colina Salida Del Sol San Clemente, CA 92673-3652 USA Tel: 949-495-6437 Cell: 714-813-6636 Fax: 949-495-6364 E-mail: lcrowder@sst.com EUROPE Silicon Storage Technology Ltd. Ralph Thomson Applications Manager Mark House 9-11 Queens Road Hersham KT12 5LU UK Tel: +44 (0) 1869 321 431 Cell: +44 (0) 7787 508 919 E-mail: rthomson@sst.com JAPAN SST Japan Yashushi Yoshinaga Sales Manager 6F Kose #2, 1-14-20 Shin-Yokohama, Kohoku-ku, Yokohama 222-0033 Kanagawa, Japan Tel: (81) 45-471-1851 Fax: (81) 45-471-3285 Email: yoshi@sst.com ASIA PACIFIC NORTH SST Macao H. H. Chang Senior Director, Sales Room A, 8th Floor, Macao Financial Centre, No. 230-246, Rua Pequim, Macao Tel: (853) 706-022 Fax: (853) 706-023 E-mail: hchang@sst.com ASIA PACIFIC SOUTH SST Communications Co. Andy Chang Director of Sales 2F, No. 415, Tiding Blvd., Sec.2, Neihu, Taipei, Taiwan, R.O.C. Tel: 02-2656-2888 x220 Fax: 02-2656-2889 E-mail: achang@sst.com KOREA SST Korea Charlie Shin Country Manager Rm# 1101 DonGu Root Bldg, 16-2 Sunae-Dong, Bundang-Gu, Sungnam, Kyunggi-Do Korea, 463-020 Tel: (82) 31-715-9138 Fax: (82) 31-715-9137 Email: cshin@sst.com Silicon Storage Technology, Inc. * 1171 Sonora Court * Sunnyvale, CA 94086 * Telephone 408-735-9110 * Fax 408-735-9036 www.SuperFlash.com or www.sst.com (c)2005 SST Communications Corp. S71284-00-000 1/05 14 |
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