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DISCRETE SEMICONDUCTORS DATA SHEET BLV25 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily for use in v.h.f.-f.m. broadcast transmitters. FEATURES * internally matched input for wideband operation and high power gain; * multi-base structure and diffused emitter ballasting resistors for an optimum temperature profile; * gold-metallization ensures excellent reliability. The transistor has a 12in 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to Th = 25 C in an unneutralized common-emitter class-B circuit. MODE OPERATION narrow band; c.w. PIN CONFIGURATION VCE V 28 f MHz 108 PL W 175 PS W < 17,5 Gp dB > 10,0 PINNING PIN 1 handbook, halfpage BLV25 % > 65 DESCRIPTION emitter emitter base collector emitter emitter 1 2 2 3 4 5 6 3 4 5 6 MSB006 Fig.1 Simplified outline, SOT119A. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. August 1986 2 Philips Semiconductors Product specification VHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (peak value); VBE = 0 open base Emitter-base voltage (open collector) Collector current d.c. or average (peak value); f > 1 MHz Total power dissipation at Tmb = 25 C R.F. power dissipation (f > 1 MHz); Tmb = 25 C R.F. power dissipation (f > 1 MHz); Th = 70 C Storage temperature Operating junction temperature IC; IC(AV) ICM Ptot (d.c.) Ptot (r.f.) Ptot (r.f.) Tstg Tj max. max. max. max. max. -65 max. to VCESM VCEO VEBO max. max. max. BLV25 65 V 33 V 4V 17, 5 A 35 A 220 W 270 W 146 W +150 C 200 C 102 handbook, halfpage MGP294 handbook, halfpage 300 MGP295 Ptot IC (A) Tmb = 25 C (1) (W) 200 10 Th = 70 C 100 1 1 10 VCE (V) 102 0 0 50 Th (C) 100 I Continuous d.c. operation (1) Second breakdown limit. II Continuous r.f. operation (f > 1 MHz) III Short-time operation during mismatch; (f > 1 MHz). Fig.2 D.C. SOAR. Fig.3 Power derating curves vs. temperature. THERMAL RESISTANCE (dissipation = 150 W; Tmb = 72 C, i.e. Th = 42 C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rth j-mb(dc) Rth j-mb(rf) Rth mb-h max max max 0,85 K/W 0,60 K/W 0,2 K/W August 1986 3 Philips Semiconductors Product specification VHF power transistor CHARACTERISTICS Tj = 25 C Collector-emitter breakdown voltage VBE = 0; IC = 50 mA open base; IC = 200 mA Emitter-base breakdown voltage open collector; IE = 20 mA Collector cut-off current VBE = 0; VCE = 33 V Second breakdown energy; L = 25 mH; f = 50 Hz open base RBE = 10 D.C. current gain(1) IC = 8,5 A; VCE = 25 V Collector-emitter saturation voltage(1) IC = 20 A; IB = 4,0 A Transition frequency at f = 100 -IE = 8,5 A; VCB = 25 V -IE = 20 A; VCB = 25 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 25 V Feedback capacitance at f = 1 MHz IC = 100 mA; VCE = 25 V Collector-flange capacitance Notes 1. Measured under pulse conditions: tp 300 s; 0,02. 2. Measured under pulse conditions: tp 50 s; 0,01. Cre Ccf typ. typ. Cc typ. MHz(2) fT fT typ. typ. VCEsat typ. hFE typ. 50 15 to 100 ESBO ESBR > > ICES < V(BR)EBO > V(BR)CES V(BR)CEO > > BLV25 65 V 33 V 4V 25 mA 20 mJ 20 mJ 1,6 V 600 MHz 600 MHz 275 pF 155 pF 3 pF August 1986 4 Philips Semiconductors Product specification VHF power transistor BLV25 handbook, halfpage 80 MGP296 handbook, halfpage 800 MGP297 hFE typ fT (MHz) typ 40 400 0 0 10 IC (A) 20 0 0 10 20 -IE (A) 30 Fig.4 VCE = 25 V; Tj = 25 C. Fig.5 VCB = 25 V; f = 100 MHz; Tj = 25 C. MGP298 handbook, halfpage 600 Cc (pF) typ 300 0 0 10 20 VCB (V) 30 Fig.6 IE = Ie = 0; f = 1 MHz; Tj = 25 C. August 1986 5 Philips Semiconductors Product specification VHF power transistor APPLICATION INFORMATION R.F. performance in narrow band c.w. operation (common-emitter class-B circuit) Th = 25 C f MHz 108 VCE V 28 PL W 175 < typ. PS W 17,5 13,9 > typ. Gp dB 10,0 11,0 < typ. IC A 9,6 8,9 BLV25 % > typ. 65 70 handbook, full pagewidth C12 C4 C5 L2 T.U.T. L5 C9 C13 C15 C16 L6 L7 50 50 C1 C2 C3 L1 L3 C6 C7 L8 +VCC R1 L4 C8 C10 C11 C14 L9 MGP299 Fig.7 Class-B test circuit at f = 108 MHz. List of components C1 = C3 = 7 to 100 pF film dielectric trimmer (cat. no. 2222 809 07015) C2 = C4 = C5 = C6 = C7 = 100 pF (500 V) multilayer ceramic chip capacitor (ATC(1)); except for C2 these capacitors are placed 7 mm from transistor edge C8 = C10 = 470 pF multilayer ceramic chip capacitor (cat. no. 2222 856 13471) C9 = C15 = 40 pF, parallel connection of 4 x 10 pF lead feed-through capacitors (cat. no. 2222 702 05109) C11 = 100 nF multilayer ceramic chip capacitor (cat. no. 2222 852 59104) C12 = C16 = 7 to 47 pF precision tuning capacitor (cat. no. 2222 805 00174) C13 = 19 pF, parallel connection of 4 x 4,7 pF lead feed-through capacitors (cat. no. 2222 702 04478) C14 = 6,8 F/63 V electrolytic capacitor L1 = Cu strip (10 mm x 4 mm x 0,5 mm) L2 = strip on printed-circuit board L3 = 7 turns closely wound enamelled Cu wire (0,3 mm); int. dia. 3,0 mm; leads 2 x 6 mm L4 = L8 = L9 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L5 = 3 turns enamelled Cu wire (1,6 mm); int. dia. 8 mm; length 9 mm; leads 2 x 5 mm L6 = Cu strip (27 mm x 9 mm x 0,5 mm) L7 = 2 turns enamelled Cu wire (1,6 mm); int. dia. 8 mm; length 9 mm; leads 2 x 10 mm L2 is strip on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16 in. R1 = 10 carbon resistor Note 1. ATC means American Technical Ceramics. August 1986 6 Philips Semiconductors Product specification VHF power transistor BLV25 270 80 L4 C8 C10 R1 L5 C11 +VCC L7 strip C13 strip C15 L8, L9 strip stop strip C12 C16 stop C2 L3 L1 C4, C5 L2 L6 C6, C7 C1 C3 7 mm C9 MGP300 The circuit and the components are on one side of the epoxy fibre-glass board, the other side is unetched copper to serve as a ground-plane. Earth connections are made by means of fixing screws. Additionally copper straps are used under the emitters and at the input and output to provide direct contact between the copper on the component side and the ground-plane. Fig.8 Component layout and printed-circuit board for 108 MHz class-B test circuit. August 1986 7 Philips Semiconductors Product specification VHF power transistor BLV25 handbook, halfpage 200 MGP301 MGP302 handbook, halfpage 250 PL (W) PL (W) Th = 25 C 50 C 70 C 200 150 100 25 C 50 C 70 C 100 50 0 1 10 VSWR 102 0 0 10 20 PS (W) 30 ------ f > 1 MHz (continuous); - - - - short time operation during mismatch (f > 1 MHz). Test circuit tuned for each power level; typical values; VCE = 28 V; f = 108 MHz; Th = 25 C; class-B operation. Fig.9 R.F. SOAR. Fig.10 Load power as a function of source power. MGP303 handbook, halfpage 16 80 Gp (%) 60 handbook, halfpage 1 MGP304 Gp (dB) 12 ri, xi () 0.5 ri xi 8 40 0 4 20 -0.5 0 0 100 200 PL (W) 0 300 -1 20 70 f (MHz) 120 Test circuit tuned for each power level; typical values; VCE = 28 V; f = 108 MHz; Th = 25 C; class-B operation. Typical values; VCE = 28 V; PL = 175 W; Th = 25 C; class-B operation. Fig.11 Power gain and efficiency as a function of source power. Fig.12 Input impedance (series components). August 1986 8 Philips Semiconductors Product specification VHF power transistor BLV25 handbook, halfpage 3 MGP305 MGP306 handbook, halfpage 20 RL, XL () 2 RL Gp (dB) 10 1 XL 0 20 70 f (MHz) 120 0 20 70 f (MHz) 120 Typical values; VCE = 28 V; PL = 175 W; Th = 25 C; class-B operation. Typical values; VCE = 28 V; PL = 175 W; Th = 25 C; class-B operation. Fig.13 Load impedance (series components). Fig.14 Power gain as a function of frequency. OPERATING NOTE for Figs 12, 13 and 14: Below 50 MHz a base-emitter resistor of 4,7 is recommended to avoid oscillation. This resistor must be effective for r.f. only. August 1986 9 Philips Semiconductors Product specification VHF power transistor PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads BLV25 SOT119A A F q C U1 H1 b2 B w2 M C c 2 4 6 H U2 p D1 w1 M A B U3 D A 1 b1 3 b e 5 w3 M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7.39 6.32 b 5.59 5.33 b1 5.34 5.08 b2 4.07 3.81 c D D1 e F H H1 p Q q U1 U2 U3 w1 w2 1.02 0.04 w3 0.26 0.01 0.18 12.86 12.83 6.48 0.07 12.59 12.57 2.54 22.10 18.55 3.31 2.28 21.08 18.28 2.97 4.58 25.23 6.48 12.76 18.42 0.51 3.98 23.95 6.07 12.06 0.291 0.220 0.210 0.160 0.007 0.505 0.505 0.100 0.870 0.730 0.130 0.180 0.993 0.255 0.502 0.725 0.02 0.255 0.249 0.210 0.200 0.150 0.003 0.496 0.495 0.090 0.830 0.720 0.117 0.157 0.943 0.239 0.475 OUTLINE VERSION SOT119A REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-28 August 1986 10 Philips Semiconductors Product specification VHF power transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BLV25 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1986 11 |
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