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| Composite Transistors XN1A312 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 0.650.15 +0.2 2.8 -0.3 1.5 -0.05 5 +0.25 0.650.15 1 2.9 -0.05 1.90.1 +0.2 q q 0.3 -0.05 0.40.2 0.16 -0.06 +0.1 Two elements incorporated into one package. (Transistors with built-in resistor, Tr1 collecter is connected to Tr2 base.) Reduction of the mounting area and assembly cost by one half. 0.95 4 0.95 3 2 1.1 -0.1 +0.2 q UN1212+UN1112 1 : Collector (Tr1) Base (Tr2) 2 : Collector (Tr2) 0 to 0.1 s Basic Part Number of Element 0.8 0.1 to 0.3 s Absolute Maximum Ratings Parameter Collector to base voltage Tr1 Collector to emitter voltage Collector current Collector to base voltage Tr2 Collector to emitter voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC VCBO VCEO IC PT Tj Tstg (Ta=25C) Ratings 50 50 100 -50 -50 -100 300 150 -55 to +150 Unit V V mA V V mA mW C C 3 : Emitter (Tr2) 4 : Base (Tr1) 5 : Emitter (Tr1) EIAJ : SC-74A Mini Type Pakage (5-pin) Marking Symbol: 4P Internal Connection 5 4 3 2 Tr1 1 Tr2 +0.1 1.450.1 s Features 1 Composite Transistors XN1A312 (Ta=25C) Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL fT R1 R1/R2 Conditions IC = 10A, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1k VCC = 5V, VB = 2.5V, RL = 1k VCB = 10V, IE = -1mA, f = 200MHz -30% 0.8 150 22 1.0 +30% 1.2 4.9 0.2 60 0.25 V V V MHz k min 50 50 0.1 0.5 0.2 typ max Unit V V A A mA s Electrical Characteristics q Tr1 Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance Resistance ratio q Tr2 Parameter Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL fT R1 R1/R2 Conditions IC = -10A, IE = 0 IC = -2mA, IB = 0 VCB = -50V, IE = 0 VCE = -50V, IB = 0 VEB = -6V, IC = 0 VCE = -10V, IC = -5mA IC = -10mA, IB = - 0.3mA VCC = -5V, VB = -0.5V, RL = 1k VCC = -5V, VB = -2.5V, RL = 1k VCB = -10V, IE = 1mA, f = 200MHz -30% 0.8 80 22 1.0 +30% 1.2 -4.9 - 0.2 60 - 0.25 V V V MHz k min -50 -50 - 0.1 - 0.5 - 0.2 typ max Unit V V A A mA Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance Resistance ratio 2 Composite Transistors Common characteristics chart PT -- Ta 500 XN1A312 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (C) Characteristics charts of Tr1 IC -- VCE 160 VCE(sat) -- IC 100 hFE -- IC IC/IB=10 400 VCE=10V Ta=25C 140 IB=1.0mA 0.9mA 0.8mA Collector to emitter saturation voltage VCE(sat) (V) 30 10 3 1 0.3 0.1 -25C 0.03 0.01 0.1 120 100 80 0.7mA 0.6mA 0.5mA 0.4mA Forward current transfer ratio hFE Collector current IC (mA) 300 Ta=75C 200 25C -25C 0.3mA 60 40 20 0 0 2 4 6 8 10 12 0.2mA 25C Ta=75C 100 0.1mA 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C -10000 -3000 VO=-5V Ta=25C -100 -30 VIN -- IO VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) -1000 -300 -100 -30 -10 -3 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 3 Composite Transistors Characteristics charts of Tr2 IC -- VCE -160 -140 Ta=25C IB=-1.0mA -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -80 -60 -40 -20 0 0 -2 -4 -6 -8 -10 -12 -0.4mA -0.3mA -0.2mA -0.1mA -100 XN1A312 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 hFE -- IC 400 VCE= -10V -30 -10 -3 -1 -0.3 -0.1 -25C -0.03 -0.01 -0.1 -0.3 Forward current transfer ratio hFE Collector current IC (mA) -120 -100 300 Ta=75C 200 25C -25C 100 25C Ta=75C -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C -10000 -3000 VO=-5V Ta=25C VIN -- IO -100 -30 VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) -1000 -300 -100 -30 -10 -3 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 4 |
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