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| MRF838A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF838A is a Common Emitter Device Designed for Class A, B and C Amplifier Applications up to 1.0 GHz. PACKAGE STYLE .205 4L STUD D 4 3 A 2 1 C FEATURES INCLUDE: * Gold Metallization * Emitter Ballasting * High Gain H B G F E #8-32UNC J MAXIMUM RATINGS IC VCBO PDISS TJ TSTG JC O O DIM A B C D E F G H I J M INIM UM inches / m m M AXIM UM inches / m m 600 mA 36 V 8.75 W @ TC = 25 C -65 Cto +200 C -65 Cto +200 C 20 C/W O O O O .976 / 24.800 .976 / 24.800 .028 / 0.700 .138 / 3.500 .161 / 4.100 .098 / 2.500 .200 / 5.100 .004 / 0.100 .425 / 10.800 .200 / 5.100 1.000 / 25.4000 1.000 / 25.4000 .031 / 0.800 .196 / 5.000 .110 / 2.800 .208 / 5.300 .006 / 0.150 .465 / 11.800 2.05 / 5.200 1 & 3 = EMITER 2 = BASE 4 = COLLECTOR CHARACTERISTICS SYMBOL BVCES BVCEO BVEBO hFE COB PG C IC = 10 mA IC = 10 mA IE = 1.0 mA VCE = 5.0 V TC = 25 C O TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 36 18 4.0 UNITS V V V --- IC = 150 mA f = 1.0 MHz POUT = 1.0 W f = 870 MHz 20 7.5 6.5 50 7.5 VCB = 12.5 V VCE = 12.5 V pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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