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| Zener Diodes Composite Elements MA111 MAZL068D Silicon planer type Constant voltage, constant current, waveform cripper and surge absorption circuit s Features 2.9 -0.05 Unit : mm 2.8 -0.3 0.650.15 5 +0.2 +0.25 1.5 -0.05 0.650.15 1 0.95 q Mini q Four type package (5-pin) anode-common element wiring of MA8068 1.90.1 +0.2 4 0.95 3 2 0.3 -0.05 0.40.2 +0.1 0.16 -0.06 1.1 -0.1 +0.2 0.8 s Absolute Maximum Ratings (Ta= 25C) Parameter Average forward current Instanious forward current Total power dissipation Junction temperature Storage temperature Working value in a single piece *2 With a printed-circuit board *1 Symbol IF(AV) IFRM Ptot*2 Tj Tstg Rating 100 200 *1 *1 Unit mA mA mW C C 5 4 3 1 : Cathode 1 4 : Anode 1, 2 2 : Cathode 2 Anode 3, 4 3 : Cathode 3 5 : Cathode 4 Mini Type Package (5-pin) 200 *1 150 - 55 to + 150 s Internal Connection 1 2 1 s Electrical Characteristics (Ta= 25C)* Parameter Forward voltage Zener voltage Operating resistance Reverse current Temperature coefficient of zener voltage Terminal capacitance Symbol VF VZ RZ IR SZ *3 Ct *2 RZK IF=10mA IZ= 5mA IZ= 0.5mA IZ= 5mA VR= 4V IZ= 5mA VR= 0V, f=1MHz 3.0 40 6.40 Condition min typ 0.9 6.80 max 1.0 7.20 60 20 0.1 Unit V V A mV/C pF Note 1. Test method : Depend on JIS C7031 testing 2. Rated input/output frequency : 5MHz 3. * 1 : The VZ value is for the temperature of 25C. In other cases, carry out the temperature compensation. * 2 : Guaranteeed at 20ms after power application * 3 : Tj= 25 to 150C s Marking 6.8D 0 to 0.1 0.1 to 0.3 +0.1 1.450.1 Zener Diodes Composite Elements MAZL068D Ptot - Ta 300 With a printed-circuit board 250 IF - VF 1000 100 Ta=25C IZ - VZ 25C 100C Ptot (mW) 100 100C 25C Ta=150C -20C IZ (mA) 10 Ta=-20C 150C 200 (mA) 10 1 Power dissipation Forward current IF 150 1 Zener current 0.1 100 50 0.1 0.01 0 0 50 100 150 Ta 200 (C) 250 Ambient temperature 0.01 0 0.2 0.4 0.6 0.8 VF 1.0 (V) 1.2 Forward voltage 0.001 6 7 Zener voltage VZ (V) 8 RZ - IZ 1000 Ta=25C 30 Ct - VR 100 f=1MHz Ta=25C (pF) IR - VR () RZ CD 100 20 (nA) 10 Operating resistance Ta=150C 1 100C Diode capacitance 10 10 Reverse current IR 0.1 25C 1 0.3 0.5 1 3 5 IZ 10 (mA) 30 50 0 0 1 2 3 4 VR 5 (V) 6 Reverse voltage 0.01 0 1 2 3 4 VR 5 (V) 6 Reverse voltage Zener current Noise - IZ 100 50 Ta=25C Noise (nV/ Hz) 10 5 1 0.5 0.1 0.1 0.5 1 5 10 Zener current IZ (mA) |
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