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| SM-8 DUAL NPN MEDIUM POWER TRANSISTORS ISSUE 1 - NOVEMBER 1995 ZDT649 C1 C1 C2 C2 PARTMARKING DETAIL T649 B1 E1 B2 E2 SM-8 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Tj:Tstg VALUE 35 25 5 6 2 -55 to +150 UNIT V V V A A C THERMAL CHARACTERISTICS PARAMETER Total Power Dissipation at Tamb = 25C* Any single die on Both die on equally Derate above 25C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally SYMBOL Ptot VALUE 2.25 2.75 18 22 55.6 45.5 UNIT W W mW/ C mW/ C C/ W C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 333 ZDT649 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL MIN. V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 70 100 75 15 150 0.12 0.23 0.9 0.8 200 200 150 50 240 25 55 300 50 35 25 5 0.1 10 0.1 0.3 0.5 1.25 1 TYP. MAX. UNIT V V V A A A CONDITIONS. IC=100A IC=10mA* IE=100A VCB=30V VCB=30V,T amb =100C VEB=4V IC=1A, IB=100mA* IC=2A, IB=200mA* IC=1A, IB=100mA* IC=1A, VCE=2V* IC=50mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=6A, VCE=2V* V V V V 300 Transition Frequency Output Capacitance Switching Times fT Cobo ton toff MHz pF ns ns IC=100mA, VCE=5V f=100MHz VCB=10V f=1MHz IC=500mA, VCC=10V IB1=IB2=50mA *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3 - 334 ZDT649 TYPICAL CHARACTERISTICS 220 0.8 200 180 - (Volts) 0.6 IC/IB=10 - Gain 160 140 120 100 80 VCE=2V 0.4 V 0.2 h 0 0.01 0.1 1 10 60 40 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 2.2 2.0 1.8 1.4 1.2 - (Volts) 1.4 1.2 1.0 0.8 IC/IB=10 - (Volts) 1.6 1.0 VCE=2V V 0.01 0.1 1 10 0.8 V 0.6 0.4 0.0001 0.001 0.01 0.1 1 10 0.6 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC td tr tf ns VBE(on) v IC IB1=IB2=IC/10 140 td ts ns 100 1000 120 Switching time tr 80 tf 800 60 ts 40 600 400 20 200 0 0.01 0.1 1 0 IC - Collector Current (Amps) Switching Speeds 3 - 335 |
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