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Datasheet File OCR Text: |
Variable Capacitance Diodes MA2Z331 Silicon epitaxial planar type Unit : mm I Features * Small series resistance rD. rD = 0.18 (typ.) * Good linearity of C - V curve * Small type package, optimum for down-sizing of equipment INDICATES CATHODE 0.4 0.15 1 2 I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Forward current (DC) Junction temperature Storage temperature Symbol VR IF Tj Tstg Rating 12 20 150 -55 to +150 Unit V C C 0.4 0.15 1.7 0.1 2.5 0.2 0.9 0.1 mA 0 to 0.05 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 6T I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Diode capacitance Symbol IR CD(1V) CD(2V) CD(4V) CD(10V) Capacitance ratio CD(1V)/CD(4V) CD(2V)/CD(10V) Series resistance* rD CD = 9 pF, f = 470 MHz VR = 12 V VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 4 V, f = 1 MHz VR = 10 V, f = 1 MHz 17.0 14.0 10.0 5.5 1.53 2.25 6.0 1.6 2.5 0.18 15.0 Conditions Min Typ Max 10 20.0 16.0 12.4 6.5 1.83 2.75 0.22 Unit nA pF pF pF pF Note) 1 Rated input/output frequency: 470 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0.16 - 0.06 + 0.1 0.3 - 0.05 + 0.1 1.25 0.1 1 MA2Z331 CD VR 100 f = 1 MHz Ta = 25C 120 Variable Capacitance Diodes IF V F 1.04 CD Ta f = 1 MHz VR = 1 V 50 100 Diode capacitance CD (pF) 30 20 Forward current IF (mA) - 40C 1.03 25C 60 CD(Ta) CD(Ta = 25C) 80 Ta = 60C 1.02 2V 4V 10 V 10 1.01 5 3 2 40 1.00 20 0.99 1 0 4 8 12 16 20 24 28 32 36 40 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0.98 0 20 40 60 80 100 Reverse voltage VR (V) Forward voltage VF (V) Reverse current Ta (C) IR T a 100 VR = 10 V Reverse current IR (nA) 10 1 0.1 0.01 0 20 40 60 80 100 120 140 160 Reverse current Ta (C) 2 |
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