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FMG2G50US120 IGBT FMG2G50US120 Molding Type Module General Description Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It's designed for the applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short-circuit ruggedness is required. Features * * * * * * Short Circuit Rated Time; 10us @ TC =100C, VGE = 15V High Speed Switching Low Saturation Voltage : VCE(sat) = 2.6 V @ IC = 50A High Input Impedance Fast & Soft Anti-Parallel FWD UL Certified No.E209204 Package Code : 7PM-GA Application * * * * * AC & DC Motor Controls General Purpose Inverters Weldings Servo Controls UPS C1 E1/C2 E2 G1 E1 G2 E2 Internal Circuit Diagram Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TSC TJ TSTG VISO Mounting Torque TC = 25C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Short Circuit Withstand Time Operating Junction Temperature Storage Temperature Range Isolation Voltage Power Terminal Screw : M5 Mounting Screw : M5 @ TC = 100C FMG2G50US120 1200 20 50 100 50 100 320 10 -40 to +150 -40 to +125 2500 4.0 4.0 Units V V A A A A W us C C V N.m N.m @ AC 1minute Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature (c)2004 Fairchild Semiconductor Corporation FMG2G50US120 Rev. A FMG2G50US120 Electrical Characteristics of IGBT Symbol Parameter TC = 25C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current Gate - Emitter Leakage Current VGE = 0V, IC = 3mA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 1200 ----0.6 ----3 100 V V/C mA nA On Characteristics VGE(th) VCE(sat) Gate - Emitter Threshold Voltage Collector to Emitter Saturation Voltage IC =50mA, VCE = VGE IC = 50A, VGE = 15V 5.0 -7.0 2.6 8.5 3.0 V V Switching Characteristics td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Tsc Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 600 V, IC =50A, RG = 10, VGE = 15V, Inductive Load, TC = 25C ------------10 ---180 80 400 65 4.68 3.48 175 75 390 120 5.6 4.4 -400 60 210 ---150 ------------ns ns ns ns mJ mJ ns ns ns ns mJ mJ us nC nC nC VCC = 600 V, IC = 50A, RG =10, VGE = 15V, Inductive Load, TC = 125C VCC = 600 V, VGE = 15V 100C @ TC = VCE = 300 V, IC =50A, VGE = 15V Electrical Characteristics of DIODE Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge TC = 25C unless otherwise noted Test Conditions IF = 50A TC = 25C TC = 125C TC = 25C TC = 125C IF = 50A di / dt = 700 A/us TC = 25C TC = 125C TC = 25C TC = 125C Min. --------- Typ. 2.3 2.2 160 220 29 36 2320 3960 Max. 3.0 -------- Unit s V ns A nC Thermal Characteristics Symbol RJC RJC RJC Weight Parameter Junction-to-Case (IGBT Part, per 1/2 Module) Junction-to-Case (DIODE Part, per 1/2 Module) Case-to-Sink (Conductive grease applied) Weight of Module Typ. --0.035 240 Max. 0.39 0.47 --Units C/W C/W C/W g (c)2004 Fairchild Semiconductor Corporation FMG2G50US120 Rev. A FMG2G50US120 100 Common Emitter VGE = 15V TC = 25 TC = 125 ------ 100 Common Emitter TC = 25 20V 15V 80 80 [A] C C o ll e c t o r C u r r e n t , I C o ll e c t o r C u r r e n t , I C [A] 60 60 12V 40 40 VGE = 10V 20 20 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 CE 0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 CE 3.0 3.5 C o ll e c t o r - E m it t e r V o lt a g e , V [V] C o ll e c t o r - E m it t e r V o lt a g e , V [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 100 Common Emitter TC = 125 20V 5.0 4.5 Common Emitter VGE = 15V [A] [A] C o ll e c t o r C u r r e n t , I C 80 C 15V 4.0 3.5 3.0 2.5 2.0 1.5 80A C o ll e c t o r C u r r e n t , I 60 12V 40 VGE = 10V 50A IC = 30A 20 0 0.0 0.5 1.0 1.5 2.0 2.5 CE 1.0 3.0 3.5 25 50 75 C 100 125 C o ll e c t o r - E m it t e r V o lt a g e , V [V] C ase T e m p erature, T [0C ] Fig 3. Typical Saturation Voltage Characteristics Fig 4. Saturation Voltage vs. Case Temperature at Variant Current Level 1000 S w it c h i n g T i m e [ n s ] S w it c h i n g T i m e [ n s ] Common Emitter VGE = 15 V, RG = 10 TC = 25 TC = 125 ------ 1000 Common Emitter VGE = 15 V, RG = 10 TC = 25 TC = 125 ------ Ton T o ff Tr 100 100 Tf 30 40 50 60 C 70 80 30 40 50 60 C 70 80 C o ll e c t o r C u r r e n t , I [A] C o ll e c t o r C u r r e n t , I [A] Fig 5. Turn-On Characteristics vs. Collector Current (c)2004 Fairchild Semiconductor Corporation Fig 6. Turn-Off Characteristics vs. Collector Current FMG2G50US120 Rev. A FMG2G50US120 14 12 Common Emitter VGE = 15 V, RG = 10 TC = 25 TC = 125 -----Common Emitter VCC = 600 V, VGE = 15 V IC = 50 A TC = 25 TC = 125 ------ 1000 Eon S w it c h i n g L o s s [ m J ] 10 8 6 S w it c h i n g T i m e [ n s ] Ton E o ff 4 2 0 30 40 50 60 C Tr 100 70 80 0 6 12 18 24 G 30 36 42 C o ll e c t o r C u r r e n t , I [A] G ate R e sista n c e, R [ ] Fig 7. Switching Loss vs. Collector Current Fig 8. Turn-on Characteristics vs. Gate Resistance 15 S w it c h i n g T i m e [ n s ] S w it c h i n g l o s s [ m J ] 1000 Common Emitter VCC = 600 V, VGE = 15 V IC = 50 A TC = 25 TC = 125 ------ 12 T o ff Common Emitter VCC = 600 V, VGE = 15 V IC = 50 A TC = 25 TC = 125 ------ 9 Eon 6 E o ff 3 100 Tf 0 0 6 12 18 24 30 G 36 42 0 6 12 18 24 G 30 36 42 G ate R e sista n c e, R [ ] G ate R e sista n c e, R [ ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 15 Common Emitter RL = 12 VCE = 600V TC = 25 120 100 Common Cathode VGE = 0V TC = 25 TC = 125 [V] [A] Forward Current, I F 12 GE 80 60 40 20 0 Gate - Emitter Voltage, V 6 3 0 9 0 50 100 150 200 250 300 350 400 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Gate Charge, Qg [ nC ] Forward Voltage, VF [V] Fig 11. Gate Charge Characteristics (c)2004 Fairchild Semiconductor Corporation Fig 12. Forward Characteristics(diode) FMG2G50US120 Rev. A FMG2G50US120 Peak Reverse Recovery Current, I rr [A] Reverse Recovery Time, T rr [ns] 1000 Common Cathode di/dt = 700A/ TC = 25 TC = 125 ------Trr 100 Irr 10 20 30 40 50 60 70 80 Forward Current, IF [A] Fig 13. Reverse Recovery Characteristics(diode) Dimensions in Millimeters (c)2004 Fairchild Semiconductor Corporation FMG2G50US120 Rev. A FMG2G50US120 Package Dimension 7PM-GA Dimensions in Millimeters (c)2004 Fairchild Semiconductor Corporation FMG2G50US120 Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2004 Fairchild Semiconductor Corporation Rev. I11 |
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