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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6728 Issued Date : 1993.04.12 Revised Date : 2002.05.07 Page No. : 1/4 HSD313 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD313 is designed for use in general purpose amplifier and switching applications. Absolute Maximum Ratings (Ta=25C) TO-220 * Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 C Junction Temperature .................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Ta=25C) ....................................................................................... 2 W Total Power Dissipation (Tc=25C) ..................................................................................... 30 W * Maximum Voltages and Currents BVCBO Collector to Base Voltage....................................................................................... 60 V BVCEO Collector to Emitter Voltage.................................................................................... 60 V BVEBO Emitter to Base Voltage............................................................................................ 5 V IC Collector Current............................................................................................................... 3 A Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 ft Min. 60 60 5 40 40 Typ. 8 Max. 0.1 5 1 1 1.5 320 Unit V V V mA mA mA V V Test Conditions IC=1mA, IE=0 IC=10mA, IB=0 IE=100uA, IC=0 VCB=20V, IE=0 VCE=60V, IB=0 VEB=4V, IC=0 IC=2A, IB=0.2A IC=1A, VCE=2V IC=1A, VCE=2V IC=0.1A, VCE=2V VCE=5V, IC=0.5A *Pulse Test: Pulse Width 380us, Duty Cycle2% V Classification Of hFE1 Rank hFE C 40-80 D 60-120 E 100-200 F 160-320 HSD313 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 o Spec. No. : HE6728 Issued Date : 1993.04.12 Revised Date : 2002.05.07 Page No. : 2/4 Current Gain & Collector Current 1000 o 125 C 125 C 25 C 75 C o o 25 C o 75 C o hFE 100 hFE hFE @ VCE=2V 100 hFE @ VCE=4V 10 1 10 100 1000 10000 10 1 10 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collector Current 1000 VCE(sat) @ IC=10IB 10000 Saturation Voltage & Collector Current VCE(sat) @ IC=50IB Saturation Voltage (mV) Saturation Voltage (mV) 1000 25 C 75 C 100 125 C o o o 100 25 C 125 C o o 75 C o 10 1 10 100 1000 10000 10 1 10 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) ON Voltage & Collector Current 10000 VBE(ON) @ VCE=2V Switching Time & Collector Current 10.00 VCC=30V, IC=10IB1 = -10IB2 Switching Times (us).. . ON Voltage (mV) 1.00 Tstg Ton Tf 0.10 75 C 1000 25 C o o 125 C o 100 1 10 100 1000 10000 0.01 0.1 1.0 10.0 Collector Current-IC (mA) Collector Current (A) HSD313 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6728 Issued Date : 1993.04.12 Revised Date : 2002.05.07 Page No. : 3/4 Capacitance & Reverse-Biased Voltage 100 Safe Operating Area 100000 PT=1ms 10000 PT=100ms PT=1s 1000 Cob 10 Collector Current-IC (mA) 100 Capacitance (pF) 100 10 1 0.1 1 10 1 1 10 100 Revers-Biased Voltage (V) Forward Voltage-VCE (V) Output Characteristics at IB=1mA,2mA,3mA...10mA 1600 1400 IB=10mA IB=9mA IB=8mA IB=7mA IB=6mA IB=5mA IB=4mA IB=3mA IB=2mA IB=1mA Collector Current (mA) 1200 1000 800 600 400 200 0 0 5 10 15 Collector Voltage (V) HSD313 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-220AB Dimension Marking: A D B E C Date Code Spec. No. : HE6728 Issued Date : 1993.04.12 Revised Date : 2002.05.07 Page No. : 4/4 H 313 SD Rank Control Code H I G 4 P M 3 2 1 N K Style: Pin 1.Base 2.Collector 3.Emitter O 3-Lead TO-220AB Plastic Package HSMC Package Code: E *: Typical DIM A B C D E G H Inches Min. Max. 0.2197 0.2949 0.3299 0.3504 0.1732 0.185 0.0453 0.0547 0.0138 0.0236 0.3803 0.4047 *0.6398 Millimeters Min. Max. 5.58 7.49 8.38 8.90 4.40 4.70 1.15 1.39 0.35 0.60 9.66 10.28 *16.25 DIM I K M N O P Inches Min. Max. *0.1508 0.0295 0.0374 0.0449 0.0551 *0.1000 0.5000 0.5618 0.5701 0.6248 Millimeters Min. Max. *3.83 0.75 0.95 1.14 1.40 *2.54 12.70 14.27 14.48 15.87 Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: * Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSD313 HSMC Product Specification |
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